IRF7853PBF

IRF7853PbF
www.irf.com 7
SO-8 Package Details
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX
MIL L IME T E R SINCHES
MIN MAX
DIM
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010]
A
6
7
K x 45°
8X L
8X c
y
0.25 [.010]
CAB
e1
A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [.050]
4. OU T L I NE CONF ORMS T O J E DE C OU T L INE MS -0 12AA.
NOT ES :
1. DIMENS IONING & T OLE RANCING PE R ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIME TE R
3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ].
5 DIMENS ION DOES NOT INCLUDE MOL D PROT RUS IONS .
6 DIMENS ION DOES NOT INCLUDE MOL D PROT RUS IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGT H OF LEAD FOR SOLDERING TO
A S UBS TRAT E.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070]
DAT E CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YEAR
PART NUMBER
LOT CODE
WW = WE E K
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
A = ASSEMBLY SITE CODE
IRF7853PbF
8 www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 49mH,
R
G
= 25, I
AS
= 5.0A.
When mounted on 1 inch square copper
board, t 10 sec.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
SO-8 Tape and Reel
Pulse width 400µs; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
I
SD
5.0A, di/dt 320A/µs, V
DD
V
(BR)DSS
, T
J
150°C.
R
θ
is measured at T
J
of approximately 90°C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/06
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IRF7853PBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET 100V 1 N-CH HEXFET 18mOhms 28nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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