FDD7N20TM

Mfr. #:: FDD7N20TM
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 200V N-CH MOSFET
Lifecycle:: New from this manufacturer.
Datasheet:: FDD7N20TM Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-252-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 200 V

Id - Continuous Drain Current:: 5 A

Rds On - Drain-Source Resistance:: 690 mOhms

Vgs - Gate-Source Voltage:: 30 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 43 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 2.39 mm

Length:: 6.73 mm

Series:: FDD7N20TM

Transistor Type:: 1 N-Channel

Width:: 6.22 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 10 ns

Product Type:: MOSFET

Rise Time:: 30 ns

Factory Pack Quantity:: 2500

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 13 ns

Typical Turn-On Delay Time:: 9 ns

Unit Weight:: 0.009184 oz

Tags: FDD7N20, FDD7N2, FDD7N, FDD7, FDD

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDD7N20TM Description

***emi: N-Channel Power MOSFET, UniFETTM, 200 V, 5 A, 690 mΩ, DPAK

***ure Electronics: N-Channel 200 V 0.69 Ohm Surface Mount UniFET Mosfet TO-252-3

***ment14 APAC: MOSFET, N-CH, 200V, 5A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Source Voltage Vds:200V; On Resistance

***r Electronics: Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***el Electronic: PMIC - AC DC Converters, Offline Switchers 4 (72 Hours) 8-SMD (7 Leads), Gull Wing Tape & Reel (TR) Buck, Buck-Boost, Flyback Surface Mount -40°C~150°C TJ Yes Non-Isolated Current Limiting, Open Loop, Over Load, Over Temperature, Over VolConv AC-DC Single Buck/Buck-Boost/Flyback 85VAC to 265VAC 7-Pin SMD-8C T/R

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM, 200V, 4.5A, 800mΩ, DPAK

***ure Electronics: N-Channel 200 V 0.8 Ohm Surface Mount UniFET Mosfet DPAK

***nell: MOSFET, N CH, 200V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.6ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:40W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: N-Channel Power MOSFET, UniFETTM, 250 V, 4.4 A, 1.1 Ω, DPAK

***ure Electronics: N-Channel 250 V 1.1 Ohm Surface Mount UniFET Mosfet DPAK

***ment14 APAC: MOSFET, N-CH, 250V, 4.4A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Source Voltage Vds:250V; On Resistance

***roFlash: Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N TO-252 SMD; Transistor Polarity:N; Current, Id Cont:4.4A; Resistance, Rds On:1.1ohm; Case Style:DPAK; Termination Type:SMD; Current, Idm Pulse:18A; No. of Pins:2; Power Dissipation:50mW; Voltage, Vds Max:250V

***rchild Semiconductor: UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***emi: P-Channel Power MOSFET, QFET®, -200 V, -5.7 A, 690 mΩ, DPAK

*** Source Electronics: Trans MOSFET P-CH 200V 5.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 200V 5.7A DPAK

***roFlash: Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:5.7mA; On Resistance, Rds(on):0.69ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V

***rchild Semiconductor: This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***th Star Micro: Transistor MOSFET N-CH 200V 4.8A 3-Pin (2+Tab) DPAK

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:4.8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 200V, 4.8A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:19A; SMD Marking:IRFR220; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***icroelectronics: N-channel 200 V, 0.65 Ohm, 5 A STripFET(TM) Power MOSFET in DPAK package

***el Electronic: MOSFET Transistor, N Channel, 2.5 A, 200 V, 650 mohm, 5 V, 2.5 V RoHS Compliant: Yes

***ure Electronics: N-Channel 200 V 0.7 O Surface Mount STripFET Power Mosfet - TO-252-3

*** Source Electronics: MOSFET N-CH 200V 5A DPAK / Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R

***ark: N CH POWER MOSFET, STripFET, 200V, 5A, DPAK, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Power Dissipation:33W RoHS Compliant: Yes

***r Electronics: Power Field-Effect Transistor, 5A I(D), 200V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, N CH, 200V, 5A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.5A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.65ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 33W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 5A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 5V

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. Of Pins:3Pins Rohs Compliant: No

Market price

Part #	Mfg.	Description	Stock	Price
FDD7N20TM DISTI # V36:1790_06300646	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R	5000	50000:$0.2086 25000:$0.2116 10000:$0.2205 2500:$0.2284
FDD7N20TM DISTI # V72:2272_06300646	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R	775	500:$0.2733 250:$0.3037 100:$0.3375 25:$0.4689 10:$0.5731 1:$0.6950
FDD7N20TM DISTI # FDD7N20TMCT-ND	ON Semiconductor	MOSFET N-CH 200V 5A D-PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4430In Stock	1000:$0.2931 500:$0.3664 100:$0.4635 10:$0.6050 1:$0.6900
FDD7N20TM DISTI # FDD7N20TMDKR-ND	ON Semiconductor	MOSFET N-CH 200V 5A D-PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4430In Stock	1000:$0.2931 500:$0.3664 100:$0.4635 10:$0.6050 1:$0.6900
FDD7N20TM DISTI # FDD7N20TMTR-ND	ON Semiconductor	MOSFET N-CH 200V 5A D-PAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	25000:$0.2253 12500:$0.2312 5000:$0.2401 2500:$0.2579
FDD7N20TM DISTI # 33626957	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R	5000	2500:$0.2284
FDD7N20TM DISTI # 22145543	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R	5000	2500:$0.1885
FDD7N20TM DISTI # 27471822	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R	775	31:$0.6950
FDD7N20TM DISTI # 30611075	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R	530	35:$0.7350
FDD7N20TM DISTI # FDD7N20TM	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD7N20TM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	125000:$0.2415 62500:$0.2455 25000:$0.2540 12500:$0.2630 7500:$0.2728 5000:$0.2833 2500:$0.2946
FDD7N20TM DISTI # FDD7N20TM	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R (Alt: FDD7N20TM) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	25000:€0.1829 15000:€0.1969 10000:€0.2129 5000:€0.2319 2500:€0.2839
FDD7N20TM DISTI # FDD7N20TM	ON Semiconductor	Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FDD7N20TM) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.2199 15000:$0.2249 10000:$0.2279 5000:$0.2309 2500:$0.2319
FDD7N20TM DISTI # 31Y1361	ON Semiconductor	MOSFET, N-CH, 200V, 5A, TO-252AA-3,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.58ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,Product Range:- RoHS Compliant: Yes	3197	1000:$0.3160 500:$0.3380 250:$0.3610 100:$0.3830 50:$0.4460 25:$0.5090 10:$0.5720 1:$0.6870
FDD7N20TM DISTI # 52M3161	ON Semiconductor	MOSFET Transistor, N Channel, 5 A, 200 V, 0.58 ohm, 10 V, 5 V	0	25000:$0.2220 10000:$0.2290 2500:$0.2380 1:$0.2390
FDD7N20TM DISTI # 512-FDD7N20TM	ON Semiconductor	MOSFET 200V N-CH MOSFET RoHS: Compliant	8660	1:$0.6400 10:$0.5260 100:$0.3390 1000:$0.2720
FDD7N20TM	Fairchild Semiconductor Corporation	POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA	2500	795:$0.2250 168:$0.2520 1:$0.7200
FDD7N20TM	Fairchild Semiconductor Corporation	POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA	200	112:$0.4500 29:$0.5400 1:$0.9000
FDD7N20TM	Fairchild Semiconductor Corporation		250
FDD7N20TM DISTI # 2453852	ON Semiconductor	MOSFET, N-CH, 200V, 5A, TO-252AA-3	2617	500:£0.2290 250:£0.2470 100:£0.2640 10:£0.4540 1:£0.5700
FDD7N20TM DISTI # 2453852	ON Semiconductor	MOSFET, N-CH, 200V, 5A, TO-252AA-3 RoHS: Compliant	3192	2500:$0.4110 1000:$0.4190 100:$0.5220 10:$0.8090 1:$0.9840
FDD7N20TM DISTI # 2453852RL	ON Semiconductor	MOSFET, N-CH, 200V, 5A, TO-252AA-3 RoHS: Compliant	0	2500:$0.4110 1000:$0.4190 100:$0.5220 10:$0.8090 1:$0.9840

Image	Part #	Description
	Mfr.#: FQD7P20TM OMO.#: OMO-FQD7P20TM	MOSFET 200V P-Channel QFET
	Mfr.#: SN74LV4051ATPWRQ1 OMO.#: OMO-SN74LV4051ATPWRQ1	Multiplexer Switch ICs 9-18 Bit HSTL tLVTTL Memory Address Latch
	Mfr.#: TMS320F28379DPTPS OMO.#: OMO-TMS320F28379DPTPS	32-bit Microcontrollers - MCU Soprano
	Mfr.#: SN6501DBVR OMO.#: OMO-SN6501DBVR	Power Management Specialized - PMIC Transformer Driver for Iso Power Supply
	Mfr.#: US1M-13-F OMO.#: OMO-US1M-13-F	Rectifiers 1000V 1A
	Mfr.#: RC0402FR-0710KL OMO.#: OMO-RC0402FR-0710KL	Thick Film Resistors - SMD 10K OHM 1%
	Mfr.#: CC0603KRX5R8BB105 OMO.#: OMO-CC0603KRX5R8BB105	Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0uF 25V X5R 10%
	Mfr.#: KTF101B475M43EHT00 OMO.#: OMO-KTF101B475M43EHT00	Multilayer Ceramic Capacitors MLCC - SMD/SMT 4.7uF 100V 20% X7R 1000 Temp Cycles
	Mfr.#: FQD7P20TM OMO.#: OMO-FQD7P20TM-ON-SEMICONDUCTOR	MOSFET P-CH 200V 5.7A DPAK
	Mfr.#: TMS320F28379DPTPS OMO.#: OMO-TMS320F28379DPTPS-TEXAS-INSTRUMENTS	Microcontrollers - MCU 32-bit Microcontrollers - MCU Soprano

FDD7N20TM

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes