KSB1017YTU

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

E

Mounting Style:

Through Hole

Package / Case:

TO-220F-3

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

- 80 V

Collector- Base Voltage VCBO:

- 80 V

Emitter- Base Voltage VEBO:

- 5 V

Collector-Emitter Saturation Voltage:

- 1 V

Maximum DC Collector Current:

4 A

Gain Bandwidth Product fT:

9 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

KSB1017

DC Current Gain hFE Max:

240

Height:

9.19 mm

Length:

10.16 mm

Packaging:

Tube

Width:

4.7 mm

Brand:

ON Semiconductor / Fairchild

Continuous Collector Current:

- 4 A

DC Collector/Base Gain hfe Min:

40

Pd - Power Dissipation:

25 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.080072 oz

Tags

KSB1017, KSB101, KSB10, KSB1, KSB