FDB031N08

Mfr. #:: FDB031N08
Manufacturer:: ON Semiconductor / Fairchild
Description:: MOSFET 75V N-Channel PowerTrench
Lifecycle:: New from this manufacturer.
Datasheet:: FDB031N08 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 75 V

Id - Continuous Drain Current:: 235 A

Rds On - Drain-Source Resistance:: 3.1 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 375 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: PowerTrench

Packaging:: Reel

Height:: 4.83 mm

Length:: 10.67 mm

Series:: FDB031N08

Transistor Type:: 1 N-Channel

Width:: 9.65 mm

Brand:: ON Semiconductor / Fairchild

Fall Time:: 121 ns

Product Type:: MOSFET

Rise Time:: 191 ns

Factory Pack Quantity:: 800

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 335 ns

Typical Turn-On Delay Time:: 230 ns

Unit Weight:: 0.062153 oz

Tags: FDB03, FDB0, FDB

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
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FDB031N08 Description

***ure Electronics: N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench® Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 75V, 235A, 3.1mΩ

***Yang: Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ment14 APAC: MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:235A; Source Voltage Vds:75V; On Resistance

***r Electronics: Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***nell: MOSFET, N-CH, 235A, 75V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 235A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ical: Trans MOSFET N-CH 75V 260A Automotive 7-Pin(6+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package

***el Electronic: Power Field-Effect Transistor, 240A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB, ROHS COMPLIANT, PLASTIC, D2PAK-7

***ure Electronics: N-Channel 60 V 2.4 mO Surface Mount PowerTrench Mosfet - D2PAK-3

***emi: N-Channel PowerTrench® MOSFET 60V, 265A, 2.4mΩ

***Yang: Trans MOSFET N-CH 60V 265A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***r Electronics: Power Field-Effect Transistor, 120A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ark: MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain

***ical: Trans MOSFET N-CH Si 60V 270A Automotive 3-Pin(2+Tab) D2PAK T/R

***ernational Rectifier: Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-PAK Package

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ineon SCT: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

***ineon: Benefits: Advanced Process Technology; Ultra Low On-Resistance; Dynamic dv/dt Rating; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

***nell: MOSFET, N-CH, 60V, 293A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.002ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C

***(Formerly Allied Electronics): IRFS3107PBF N-channel MOSFET Transistor; 230 A; 75 V; 3-Pin D2PAK

***roFlash: Single N-Channel 75 V 3 mOhm 160 nC HEXFET¬Æ Power Mosfet - D2PAK

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

***ical: Trans MOSFET N-CH Si 75V 230A 3-Pin(2+Tab) D2PAK Tube

***trelec: MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK Polarity: N Power dissipation: 370 W

***nell: MOSFET, N-CH, 75V, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 230A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.35V; Power D

***p One Stop Global: Trans MOSFET N-CH 80V 229A 7-Pin(6+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 80 V 246 W 178 nC PowerTrench Surface Mount Mosfet - TO-263-7

***emi: N-Channel PowerTrench® MOSFET 80V, 229A, 2.4mΩ

***r Electronics: Power Field-Effect Transistor, 120A I(D), 80V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB

***el Electronic: Chip Resistor - Surface Mount 16Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 16 OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ical: Trans MOSFET N-CH 60V 193A 3-Pin(2+Tab) D2PAK T/R

***emi: N-Channel PowerTrench® MOSFET 60V, 193A, 3.1mΩ

***r Electronics: Power Field-Effect Transistor, 120A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 200kOhm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 200K OHM 1% 1/10W 0402

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Market price

Part #	Mfg.	Description	Stock	Price
FDB031N08 DISTI # V72:2272_06300773	ON Semiconductor	75V,235A,3.1M OHM,NCH POWER	497	250:$3.2100 100:$3.4740 25:$4.1070 10:$4.1090 1:$4.8040
FDB031N08 DISTI # V36:1790_06300773	ON Semiconductor	75V,235A,3.1M OHM,NCH POWER	0
FDB031N08 DISTI # FDB031N08CT-ND	ON Semiconductor	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1595In Stock	100:$4.3271 10:$5.2770 1:$5.9100
FDB031N08 DISTI # FDB031N08DKR-ND	ON Semiconductor	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1595In Stock	100:$4.3271 10:$5.2770 1:$5.9100
FDB031N08 DISTI # FDB031N08TR-ND	ON Semiconductor	MOSFET N-CH 75V 120A D2PAK RoHS: Compliant Min Qty: 800 Container: Tape & Reel (TR)	800In Stock	2400:$2.7256 1600:$2.8690 800:$3.0739
FDB031N08 DISTI # 32316888	ON Semiconductor	75V,235A,3.1M OHM,NCH POWER	5600	800:$2.9175
FDB031N08 DISTI # 31601303	ON Semiconductor	75V,235A,3.1M OHM,NCH POWER	497	250:$3.2100 100:$3.5760 25:$4.1070 10:$4.1090 3:$4.8040
FDB031N08 DISTI # FDB031N08	ON Semiconductor	Trans MOSFET N-CH 75V 235A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB031N08) RoHS: Compliant Min Qty: 800 Container: Reel	Americas - 0	800:$2.0900 1600:$2.0900 3200:$2.0900 4800:$2.0900 8000:$1.9900
FDB031N08 DISTI # 07P9157	ON Semiconductor	FET 75V 3.1 MOHM D2PAK / REEL	0	9600:$2.4500 2400:$2.5300 800:$2.7700 1:$2.7900
FDB031N08 DISTI # 512-FDB031N08	ON Semiconductor	MOSFET 75V N-Channel PowerTrench RoHS: Compliant	18377	1:$4.9400 10:$4.2000 100:$3.6400 250:$3.4500 500:$3.1000
FDB031N08	ON Semiconductor	N-Channel 75 V 3.1 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3 RoHS: Compliant	8800Reel	800:$2.2700
FDB031N08	Fairchild Semiconductor Corporation		638
FDB031N08	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	Europe - 298
FDB031N08 DISTI # XSFP00000106362	Fairchild Semiconductor Corporation	RoHS: Compliant	7200 in Stock0 on Order	7200:$4.1300 800:$4.5400
FDB031N08 DISTI # 3004020	ON Semiconductor	MOSFET, N-CH, 235A, 75V, TO-263 RoHS: Compliant	0	1000:$3.9000 500:$4.2300 250:$4.6200 100:$5.0800 10:$5.6300 1:$6.3400

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Availability

Stock:: 18
On Order:: 2001
Enter Quantity:

Current price of FDB031N08 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$4.94~~; ~~$4.94~~

10: ~~$4.20~~; ~~$42.00~~

100: ~~$3.64~~; ~~$364.00~~

250: ~~$3.45~~; ~~$862.50~~

500: ~~$3.10~~; ~~$1 550.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes