OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STB80N20M5

STB80N20M5
Mfr. #:
STB80N20M5
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch 200V 0.019 61A Mdmesh V
Lifecycle:
New from this manufacturer.
Datasheet:
STB80N20M5 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
STB80N20M5 more Information STB80N20M5 Product Details
Product Attribute
Attribute Value
Manufacturer:
STMicroelectronics
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
61 A
Rds On - Drain-Source Resistance:
23 mOhms
Vgs th - Gate-Source Threshold Voltage:
5 V
Vgs - Gate-Source Voltage:
25 V
Qg - Gate Charge:
104 nC
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
190 W
Configuration:
Single
Tradename:
MDmesh
Packaging:
Reel
Series:
STB80N20M5
Transistor Type:
1 N-Channel
Type:
N-Channel MDmesh V Power MOSFET
Brand:
STMicroelectronics
Forward Transconductance - Min:
1.6 S
Fall Time:
176 ns
Product Type:
MOSFET
Rise Time:
31 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
131 ns
Typical Turn-On Delay Time:
66 ns
Unit Weight:
0.139332 oz
Tags
STB80N, STB80, STB8, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 200 V 23 mOhm Surface Mount MDmesh™ V Power Mosfet - D2PAK
***ical
Trans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
***p One Stop Global
Trans MOSFET N-CH 200V 61A 3-Pin(2+Tab) D2PAK T/R
*** Source Electronics
MOSFET N-CH 200V 61A D2PAK
***ponent Sense
MOSFET N-Ch 200V 0.019 61A Mdmesh V
***et
TRANSISTORSPOWER MOSFETSN-CHANNEL (>150V TO 400V)
***ark
Mosfet, N-Ch, 200V, 61A, To-262; Transistor Polarity:n Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.019Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipationrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 61A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-262; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:Mdmesh V Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 200V, 61A, TO-262; Polarità Transistor:Canale N; Corrente Continua di Drain Id:61A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.019ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:190W; Modello Case Transistor:TO-262; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:Mdmesh V Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Part # Mfg. Description Stock Price
STB80N20M5
DISTI # V79:2366_17793148		STMicroelectronicsTrans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		3399
  • 1:$5.1600
STB80N20M5
DISTI # 497-10705-1-ND		STMicroelectronicsMOSFET N-CH 200V 61A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		343In Stock
  • 500:$4.5309
  • 100:$5.4078
  • 10:$6.5770
  • 1:$7.3100
STB80N20M5
DISTI # 497-10705-6-ND		STMicroelectronicsMOSFET N-CH 200V 61A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		343In Stock
  • 500:$4.5309
  • 100:$5.4078
  • 10:$6.5770
  • 1:$7.3100
STB80N20M5
DISTI # 497-10705-2-ND		STMicroelectronicsMOSFET N-CH 200V 61A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		On Order
  • 1000:$3.8313
STB80N20M5
DISTI # 26118064		STMicroelectronicsTrans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		3399
  • 2:$5.1600
STB80N20M5
DISTI # STB80N20M5		STMicroelectronicsTrans MOSFET N-CH 200V 61A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB80N20M5)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.7900
  • 2000:$3.5900
  • 4000:$3.4900
  • 6000:$3.2900
  • 10000:$3.1900
STB80N20M5
DISTI # 51AC9539		STMicroelectronicsMOSFET, N-CH, 200V, 61A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:61A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.019ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes874
  • 1:$5.4900
  • 10:$4.8400
  • 25:$4.4400
  • 50:$4.0100
  • 100:$3.4900
  • 250:$2.7700
  • 500:$2.6300
  • 1000:$2.4700
STB80N20M5
DISTI # 511-STB80N20M5		STMicroelectronicsMOSFET N-Ch 200V 0.019 61A Mdmesh V
RoHS: Compliant		0
  • 1000:$3.4800
STB80N20M5
DISTI # 2849650		STMicroelectronicsMOSFET, N-CH, 200V, 61A, TO-262
RoHS: Compliant		904
  • 1:£6.2500
  • 10:£5.1500
  • 100:£4.2300
  • 250:£3.8900
  • 500:£3.5400
STB80N20M5
DISTI # 2849650		STMicroelectronicsMOSFET, N-CH, 200V, 61A, TO-262
RoHS: Compliant		874
  • 1:$11.6600
  • 10:$10.4900
  • 100:$8.6200
  • 500:$7.2300
STB80N20M5
DISTI # C1S730200656001		STMicroelectronicsTrans MOSFET N-CH Si 200V 61A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		3399
  • 500:$4.5550
  • 100:$4.9150
  • 10:$5.7820
  • 1:$6.3300
Image Part # Description
STB80NF55L-06T4

Mfr.#: STB80NF55L-06T4

OMO.#: OMO-STB80NF55L-06T4

 MOSFET N-Ch, 55V-0.005ohms 80A
STB80N06-10

Mfr.#: STB80N06-10

OMO.#: OMO-STB80N06-10-1190

 New and Original
STB80N4F6AG

Mfr.#: STB80N4F6AG

OMO.#: OMO-STB80N4F6AG-STMICROELECTRONICS

 MOSFET N-CH 40V 80A D2PAK
STB80NE03

Mfr.#: STB80NE03

OMO.#: OMO-STB80NE03-1190

 New and Original
STB80NF03L041

Mfr.#: STB80NF03L041

OMO.#: OMO-STB80NF03L041-1190

 Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
STB80NF10T4

Mfr.#: STB80NF10T4

OMO.#: OMO-STB80NF10T4-STMICROELECTRONICS

 MOSFET N-CH 100V 80A D2PAK
STB80NF50

Mfr.#: STB80NF50

OMO.#: OMO-STB80NF50-1190

 New and Original
STB80NF55L-08-1

Mfr.#: STB80NF55L-08-1

OMO.#: OMO-STB80NF55L-08-1-STMICROELECTRONICS

 MOSFET N-CH 55V 80A I2PAK
STB80NF55L-08T4

Mfr.#: STB80NF55L-08T4

OMO.#: OMO-STB80NF55L-08T4-1190

 MOSFET N-Ch 55 Volt 80 Amp
STB80PF55T4

Mfr.#: STB80PF55T4

OMO.#: OMO-STB80PF55T4-STMICROELECTRONICS

 MOSFET P-CH 55V 80A D2PAK
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of STB80N20M5 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$6.13
$6.13
10
$5.54
$55.40
25
$5.29
$132.25
100
$4.59
$459.00
250
$4.38
$1 095.00
500
$3.99
$1 995.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
More Newest Products
Top