PartNumber | STB80N4F6AG | STB80N20M5 | STB80NE03L-06T4 |
Description | MOSFET Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package | MOSFET N-Ch 200V 0.019 61A Mdmesh V | MOSFET N-Ch 30 Volt 80 Amp |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 200 V | 30 V |
Id Continuous Drain Current | 80 A | 61 A | 80 A |
Rds On Drain Source Resistance | 6 mOhms | 23 mOhms | 5 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | 5 V | - |
Vgs Gate Source Voltage | 20 V | 25 V | 20 V |
Qg Gate Charge | 36 nC | 104 nC | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 175 C |
Pd Power Dissipation | 70 W | 190 W | 150 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Qualification | AEC-Q101 | - | - |
Tradename | STripFET | MDmesh | - |
Packaging | Reel | Reel | Reel |
Series | STB80N4F6AG | STB80N20M5 | STB80NE03L |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 11.9 ns | 176 ns | 165 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 7.6 ns | 31 ns | 260 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 46.1 ns | 131 ns | - |
Typical Turn On Delay Time | 10.5 ns | 66 ns | 40 ns |
Type | - | N-Channel MDmesh V Power MOSFET | MOSFET |
Forward Transconductance Min | - | 1.6 S | 50 S |
Unit Weight | - | 0.139332 oz | 0.139332 oz |
Height | - | - | 4.6 mm |
Length | - | - | 10.4 mm |
Width | - | - | 9.35 mm |