IPL65R230C7

IPL65R230C7
Mfr. #:
IPL65R230C7
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
Lifecycle:
New from this manufacturer.
Datasheet:
IPL65R230C7 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IPL65R230C7 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
VSON-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
230 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
67 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
1.1 mm
Length:
8 mm
Series:
CoolMOS C7
Transistor Type:
1 N-Channel
Width:
8 mm
Brand:
Infineon Technologies
Fall Time:
22 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
5 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
71 ns
Typical Turn-On Delay Time:
8 ns
Part # Aliases:
IPL65R230C7AUMA1 SP001032728
Tags
IPL65R23, IPL65R2, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ C7 Power MOSFETs
Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.
Part # Mfg. Description Stock Price
IPL65R230C7AUMA1
DISTI # V72:2272_06378016
Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3041
  • 1000:$1.3157
  • 500:$1.5742
  • 250:$1.8908
  • 100:$2.0108
  • 25:$2.4538
  • 10:$2.4820
  • 1:$2.7368
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
1652In Stock
  • 1000:$1.4450
  • 500:$1.7440
  • 100:$2.2423
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
1652In Stock
  • 1000:$1.4450
  • 500:$1.7440
  • 100:$2.2423
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 650V 10A 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 3000:$1.3062
IPL65R230C7AUMA1
DISTI # 31601455
Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3041
  • 1000:$1.3157
  • 500:$1.5742
  • 250:$1.8908
  • 100:$2.0108
  • 25:$2.4538
  • 10:$2.4820
  • 6:$2.7368
IPL65R230C7AUMA1
DISTI # 27158548
Infineon Technologies AGTrans MOSFET N-CH 650V 10A 4-Pin VSON EP T/R3000
  • 3000:$1.3872
IPL65R230C7
DISTI # 31073579
Infineon Technologies AG0400
  • 200:$1.3005
  • 100:$1.4790
  • 50:$1.7468
  • 10:$2.1420
  • 7:$4.1947
IPL65R230C7AUMA1
DISTI # IPL65R230C7AUMA1
Infineon Technologies AGTrans MOSFET N-CH 650(Min)V 10A 4-Pin VSON T/R - Tape and Reel (Alt: IPL65R230C7AUMA1)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.1900
  • 6000:$1.1900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
IPL65R230C7AUMA1
DISTI # 13AC9066
Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5,Transistor Polarity:N Channel,Continuous Drain Current Id:10A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.204ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2179
  • 1000:$1.4500
  • 500:$1.7400
  • 250:$1.9900
  • 100:$2.2400
  • 50:$2.4200
  • 25:$2.6100
  • 10:$2.7900
  • 1:$3.0900
IPL65R230C7AUMA1Infineon Technologies AGPower Field-Effect Transistor, 10A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
9000
  • 1000:$1.2100
  • 500:$1.2700
  • 100:$1.3300
  • 25:$1.3800
  • 1:$1.4900
IPL65R230C7
DISTI # 726-IPL65R230C7
Infineon Technologies AGMOSFET N-Ch 650V 10A ThinPAK-4 CoolMOS C7
RoHS: Compliant
1059
  • 1:$2.5200
  • 10:$2.1400
  • 100:$1.7100
  • 500:$1.5000
  • 1000:$1.2400
IPL65R230C7AUMA1
DISTI # 2726064
Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5
RoHS: Compliant
2179
  • 500:£1.3900
  • 250:£1.5900
  • 100:£1.7800
  • 10:£2.2200
  • 1:£2.7700
IPL65R230C7
DISTI # C1S322000376805
Infineon Technologies AGMOSFETs
RoHS: Compliant
400
  • 200:$1.0200
  • 100:$1.1600
  • 50:$1.3700
  • 10:$1.6800
  • 1:$3.2900
IPL65R230C7AUMA1
DISTI # 2726064
Infineon Technologies AGMOSFET, N-CH, 650V, 10A, VSON-5
RoHS: Compliant
2179
  • 1000:$2.3100
  • 500:$2.7800
  • 100:$3.5800
  • 10:$4.4500
  • 1:$4.9300
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of IPL65R230C7 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.58
$2.58
10
$2.19
$21.90
100
$1.76
$176.00
500
$1.54
$770.00
1000
$1.27
$1 270.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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