IXTA10N60P

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

740 mOhms

Vgs - Gate-Source Voltage:

30 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

200 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

4.83 mm

Length:

10.41 mm

Transistor Type:

1 N-Channel

Width:

9.65 mm

Brand:

IXYS

Forward Transconductance - Min:

11 S

Fall Time:

21 ns

Product Type:

MOSFET

Rise Time:

27 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

65 ns

Typical Turn-On Delay Time:

23 ns

Unit Weight:

0.056438 oz

Tags

IXTA10, IXTA1, IXTA, IXT