IXTA10P15T

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-263-3

Number of Channels:

3 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

150 V

Id - Continuous Drain Current:

10 A

Rds On - Drain-Source Resistance:

350 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

15 V

Qg - Gate Charge:

36 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

83 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 P-Channel

Brand:

IXYS

Fall Time:

12 ns

Product Type:

MOSFET

Rise Time:

16 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

40 ns

Typical Turn-On Delay Time:

19 ns

Tags

IXTA10P, IXTA10, IXTA1, IXTA, IXT