| PartNumber | IXTA10P50P | IXTA10P15T | IXTA10P15T-TRL |
| Description | MOSFET -10.0 Amps -500V 1.000 Rds | MOSFET DISCMSFT PCHAN-TRENCH GATE | MOSFET IXTA10P15T TRL |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263AA-3 | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 3 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 150 V | - 150 V |
| Id Continuous Drain Current | 10 A | 10 A | - 10 A |
| Rds On Drain Source Resistance | 1 Ohms | 350 mOhms | 350 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - 2 V |
| Vgs Gate Source Voltage | 10 V | 15 V | - 10 V |
| Qg Gate Charge | 50 nC | 36 nC | 36 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 300 W | 83 W | 83 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Tube | Reel |
| Height | 4.83 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | IXTA10P50P | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 9.65 mm | - | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 6.5 S | - | - |
| Fall Time | 44 ns | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 28 ns | 16 ns | 16 ns |
| Factory Pack Quantity | 50 | 50 | 800 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 52 ns | 40 ns | 40 ns |
| Typical Turn On Delay Time | 20 ns | 19 ns | 19 ns |
| Unit Weight | 0.056438 oz | - | - |