HGTD10N50F1

HGTD10N50F1
Mfr. #:
HGTD10N50F1
Manufacturer:
Rochester Electronics, LLC
Description:
Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
Lifecycle:
New from this manufacturer.
Datasheet:
HGTD10N50F1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
HGTD10, HGTD1, HGTD, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
10A 400V AND 500V N-CH IGBTS
Part # Mfg. Description Stock Price
HGTD10N50F1Harris SemiconductorInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
RoHS: Not Compliant
2649
  • 1000:$1.6600
  • 500:$1.7500
  • 100:$1.8200
  • 25:$1.9000
  • 1:$2.0400
HGTD10N50F1SHarris SemiconductorInsulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA
RoHS: Not Compliant
495
  • 1000:$0.8300
  • 500:$0.8700
  • 100:$0.9100
  • 25:$0.9500
  • 1:$1.0200
Image Part # Description
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A

IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A-ON-SEMICONDUCTOR

IGBT 1200V 5.3A 60W TO252AA
HGTD10N40F1

Mfr.#: HGTD10N40F1

OMO.#: OMO-HGTD10N40F1-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-251AA
HGTD10N40F1S

Mfr.#: HGTD10N40F1S

OMO.#: OMO-HGTD10N40F1S-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-252AA
HGTD10N50F1

Mfr.#: HGTD10N50F1

OMO.#: OMO-HGTD10N50F1-1190

Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-251AA
HGTD10N50F1S

Mfr.#: HGTD10N50F1S

OMO.#: OMO-HGTD10N50F1S-1190

Insulated Gate Bipolar Transistor, 12A I(C), 500V V(BR)CES, N-Channel, TO-252AA
HGTD14N05B

Mfr.#: HGTD14N05B

OMO.#: OMO-HGTD14N05B-1190

New and Original
HGTD1N120B

Mfr.#: HGTD1N120B

OMO.#: OMO-HGTD1N120B-1190

New and Original
HGTD1N120BNS

Mfr.#: HGTD1N120BNS

OMO.#: OMO-HGTD1N120BNS-1190

IGBT Transistors NPTPIGBT TO252 5.3A 1200V
HGTD1N120BNS 1N120B

Mfr.#: HGTD1N120BNS 1N120B

OMO.#: OMO-HGTD1N120BNS-1N120B-1190

New and Original
Availability
Stock:
Available
On Order:
2500
Enter Quantity:
Current price of HGTD10N50F1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$0.00
$0.00
10
$0.00
$0.00
100
$0.00
$0.00
500
$0.00
$0.00
1000
$0.00
$0.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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