HGTD1N120BNS9A

Mfr. #:: HGTD1N120BNS9A
Manufacturer:: ON Semiconductor / Fairchild
Description:: IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
Lifecycle:: New from this manufacturer.
Datasheet:: HGTD1N120BNS9A Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: E

Technology:: Si

Package / Case:: TO-252AA-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1200 V

Collector-Emitter Saturation Voltage:: 2.5 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 5.3 A

Pd - Power Dissipation:: 60 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: HGTD1N120BNS

Packaging:: Reel

Continuous Collector Current Ic Max:: 5.3 A

Height:: 2.3 mm

Length:: 6.6 mm

Width:: 6.1 mm

Brand:: ON Semiconductor / Fairchild

Continuous Collector Current:: 5.3 A

Gate-Emitter Leakage Current:: +/- 250 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 2500

Subcategory:: IGBTs

Unit Weight:: 0.009184 oz

Tags: HGTD1N120BN, HGTD1N, HGTD1, HGTD, HGT

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HGTD1N120BNS9A Description

***ical: Trans IGBT Chip N=-CH 1200V 5.3A 60000mW 3-Pin(2+Tab) DPAK T/R

***ure Electronics: HGTD1N120BNS9A Series N-Channel 1200 V 5.3 A Surface Mount IGBT - TO-252AA

***ark: Transistor; Transistor Type:IGBT; DC Collector Current:5.3A; Collector Emitter Voltage, Vces:1200V; Power Dissipation, Pd:60W; Collector Emitter Voltage, V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +150°C; No. of Pins:3 ;RoHS Compliant: Yes

***rchild Semiconductor: HGTD1N120BNS9A is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

Market price

Part #	Mfg.	Description	Stock	Price
HGTD1N120BNS9A DISTI # V72:2272_06301347	ON Semiconductor	NPTPIGBT TO252 5.3A 1200V	2512	1000:$0.6572 500:$0.8194 250:$0.8848 100:$0.9194 25:$1.1703 10:$1.1721 1:$1.3556
HGTD1N120BNS9A DISTI # HGTD1N120BNS9ACT-ND	ON Semiconductor	IGBT 1200V 5.3A 60W TO252AA RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6782In Stock	1000:$0.7524 500:$0.9468 100:$1.1412 10:$1.4570 1:$1.6200
HGTD1N120BNS9A DISTI # HGTD1N120BNS9ADKR-ND	ON Semiconductor	IGBT 1200V 5.3A 60W TO252AA RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6782In Stock	1000:$0.7524 500:$0.9468 100:$1.1412 10:$1.4570 1:$1.6200
HGTD1N120BNS9A DISTI # HGTD1N120BNS9ATR-ND	ON Semiconductor	IGBT 1200V 5.3A 60W TO252AA RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	5000:$0.6518 2500:$0.6832
HGTD1N120BNS9A DISTI # 27193709	ON Semiconductor	NPTPIGBT TO252 5.3A 1200V	2512	1000:$0.6572 500:$0.8194 250:$0.8848 100:$0.9194 25:$1.1704 13:$1.1721
HGTD1N120BNS9A DISTI # HGTD1N120BNS9A	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R (Alt: HGTD1N120BNS9A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 2500	2500:$0.5980 5000:$0.5750 7500:$0.5537 12500:$0.5339 25000:$0.5155 62500:$0.4983 125000:$0.4902
HGTD1N120BNS9A DISTI # HGTD1N120BNS9A	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: HGTD1N120BNS9A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5359 5000:$0.5329 10000:$0.5259 15000:$0.5189 25000:$0.5059
HGTD1N120BNS9A DISTI # 31Y1823	ON Semiconductor	IGBT Single Transistor, 5.3 A, 2.5 V, 60 W, 1.2 kV, TO-252AA, 3 , RoHS Compliant: Yes	21277	1:$1.5600 10:$1.3300 25:$1.2300 50:$1.1300 100:$1.0300 250:$0.9770 500:$0.9200 1000:$0.7360
HGTD1N120BNS9A DISTI # 82C5178	ON Semiconductor	SINGLE IGBT, 1.2KV, 5.3A, FULL REEL,DC Collector Current:5.3A,Collector Emitter Saturation Voltage Vce(on):2.5V,Power Dissipation Pd:60W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C, RoHS Compliant: Yes	0	1:$0.6340 2500:$0.6300 10000:$0.6070 25000:$0.5890
HGTD1N120BNS9A DISTI # 512-HGTD1N120BNS9A	ON Semiconductor	IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series RoHS: Compliant	2393	1:$1.4800 10:$1.2600 100:$0.9670 500:$0.8550 1000:$0.6750 2500:$0.5980 10000:$0.5760
HGTD1N120BNS9A	Fairchild Semiconductor Corporation		1804
HGTD1N120BNS9A	Fairchild Semiconductor Corporation	RoHS: Not Compliant	Europe - 46917
HGTD1N120BNS9A DISTI # 2453921	ON Semiconductor	IGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3 RoHS: Compliant	21347	5:£1.1900 25:£1.0800 100:£0.8300 250:£0.7820 500:£0.7330
HGTD1N120BNS9A DISTI # C1S226600689984	ON Semiconductor	Trans IGBT Chip N-CH 1.2KV 5.3A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant	2512	250:$0.8848 100:$0.9194 10:$1.1721
HGTD1N120BNS9A DISTI # C1S541901472166	ON Semiconductor	IGBT Chip RoHS: Compliant	30000	2500:$0.3470
HGTD1N120BNS9A DISTI # 2453921RL	ON Semiconductor	IGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3 RoHS: Compliant	0	1:$2.3500 10:$2.0000 100:$1.5400 500:$1.3600 1000:$1.0800 2500:$0.9470 10000:$0.9120
HGTD1N120BNS9A DISTI # 2453921	ON Semiconductor	IGBT, SINGLE, 1.2KV, 5.3A, TO-252AA-3 RoHS: Compliant	21277	1:$2.3500 10:$2.0000 100:$1.5400 500:$1.3600 1000:$1.0800 2500:$0.9470 10000:$0.9120

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Availability

Stock:: Available
On Order:: 1992
Enter Quantity:

Current price of HGTD1N120BNS9A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.48~~; ~~$1.48~~

10: ~~$1.26~~; ~~$12.60~~

100: ~~$0.97~~; ~~$96.70~~

500: ~~$0.86~~; ~~$427.50~~

1000: ~~$0.68~~; ~~$675.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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HGTD1N120BNS9A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes