PartNumber | HGTD1N120BNS9A | HGTD1N120BNS | HGTD1N120BNS 1N120B |
Description | IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series | IGBT Transistors NPTPIGBT TO252 5.3A 1200V | |
Manufacturer | ON Semiconductor | - | - |
Product Category | IGBT Transistors | - | - |
RoHS | E | - | - |
Technology | Si | - | - |
Package / Case | TO-252AA-3 | - | - |
Mounting Style | SMD/SMT | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 1200 V | - | - |
Collector Emitter Saturation Voltage | 2.5 V | - | - |
Maximum Gate Emitter Voltage | 20 V | - | - |
Continuous Collector Current at 25 C | 5.3 A | - | - |
Pd Power Dissipation | 60 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | HGTD1N120BNS | - | - |
Packaging | Reel | - | - |
Continuous Collector Current Ic Max | 5.3 A | - | - |
Height | 2.3 mm | - | - |
Length | 6.6 mm | - | - |
Width | 6.1 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Continuous Collector Current | 5.3 A | - | - |
Gate Emitter Leakage Current | +/- 250 nA | - | - |
Product Type | IGBT Transistors | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | IGBTs | - | - |
Unit Weight | 0.009184 oz | - | - |