FGD5T120SH

Mfr. #:: FGD5T120SH
Manufacturer:: ON Semiconductor / Fairchild
Description:: IGBT Transistors 1200V 5A Field Stop Trench IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: FGD5T120SH Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: FGD5T120SH more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: DPAK-3

Mounting Style:: SMD/SMT

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 1.2 kV

Collector-Emitter Saturation Voltage:: 2.9 V

Maximum Gate Emitter Voltage:: 25 V

Continuous Collector Current at 25 C:: 10 A

Pd - Power Dissipation:: 69 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Series:: FGD5T120SH

Packaging:: Reel

Continuous Collector Current Ic Max:: 10 A

Brand:: ON Semiconductor / Fairchild

Gate-Emitter Leakage Current:: +/- 400 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 2500

Subcategory:: IGBTs

Unit Weight:: 0.009184 oz

Tags: FGD

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FGD5T120SH Description

***ical: Trans IGBT Chip N=-CH 1200V 10A 69000mW T/R

***nell: IGBT, SINGLE, N-CH, 1.2KV, 10A, TO-252-3; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.9V; Power Dissipation Pd: 69W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-252; No.

***rchild Semiconductor: Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for inrush current limitation, lighting and home appliance applications.

***ark: IGBT, 1.2KV, 10A, 150DEG C, 69W; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:2.9V; Power Dissipation:69W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

***ical: Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R

***icroelectronics: Trench gate field-stop IGBT, H series 600 V, 5 A high speed

***ure Electronics: H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252

***nell: IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***p One Stop: Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(2+Tab) DPAK T/R

***ure Electronics: SGD02N120 Series 1200 V 2 A Surface Mount Fast IGBT - PG-TO-252-3

***ark: Igbt, Single, 1.2Kv, 6.2A, To-252; Dc Collector Current:6.2A; Collector Emitter Saturation Voltage Vce(On):3.1V; Power Dissipation Pd:62W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes

***ineon: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.

*** Source Electronics: Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3-Pin(2+Tab) DPAK T/R / HighSpeed 2-Technology

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.7pF 25volts C0G +/-0.25pF

***ineon SCT: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO252-3, RoHS

***nell: IGBT, N, 1200V, 1.3A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:1.3A; Voltage, Vce Sat Max:2.8V; Power Dissipation:28W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:1200V; Transistors, No. of:1

***ineon: Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: Loss reduction in resonant circuits; Temperature stable behavior; Parallel switching capability; Tight parameter distribution; E off optimized for IC =1A | Target Applications: SMPS

***ical: Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK T/R

***ure Electronics: IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA

***nell: IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns

***ernational Rectifier: 600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package

***ark: IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:8.5A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes

***nell: IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1

***ical: Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R

***emi: IGBT, 600V, 3A, Short Circuit Rated

*** Stop Electro: Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252

***S: French Electronic Distributor since 1988

***rchild Semiconductor: Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.

FGD5T120SH More Information

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

1200V Field Stop Trench IGBTs: ON Semiconductor 1200V field stop trench IGBTs feature minimized conduction losses by having a VCE(SAT) of 1.8V, lower than previous fast switching NPT IGBTs. The 1200V field stop trench IGBTs target hard switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders. The 1200V field stop trench IGBT series operate at high switching frequencies., and is 100% tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. These products are available in TO-247-3, TO-247-4, and DPAK-3 packages, and are offered in 15A, 25A, and 40A ratings.

Market price

Part #	Mfg.	Description	Stock	Price
FGD5T120SH DISTI # V72:2272_14701467	ON Semiconductor	Trans IGBT Chip N-CH 1200V 10A 69000mW T/R	2253	1000:$0.4873 500:$0.6504 250:$0.6664 100:$0.7403 25:$0.8653 10:$1.0576 1:$1.2306
FGD5T120SH DISTI # V36:1790_14701467	ON Semiconductor	Trans IGBT Chip N-CH 1200V 10A 69000mW T/R	0	2500000:$0.4029 1250000:$0.4033 250000:$0.4365 25000:$0.4980 2500:$0.5085
FGD5T120SH DISTI # FGD5T120SHTR-ND	ON Semiconductor	IGBT 1200V 5A FS3 DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.4843 2500:$0.5085
FGD5T120SH DISTI # FGD5T120SHCT-ND	ON Semiconductor	IGBT 1200V 5A FS3 DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5611 500:$0.7108 100:$0.8604 10:$1.1040 1:$1.2300
FGD5T120SH DISTI # FGD5T120SHDKR-ND	ON Semiconductor	IGBT 1200V 5A FS3 DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5611 500:$0.7108 100:$0.8604 10:$1.1040 1:$1.2300
FGD5T120SH DISTI # 31262030	ON Semiconductor	Trans IGBT Chip N-CH 1200V 10A 69000mW T/R	2253	15:$1.2306
FGD5T120SH DISTI # FGD5T120SH	ON Semiconductor	IGBT Transistors 1200V 5A Field Stop Trench IGBT (Alt: FGD5T120SH) RoHS: Compliant Min Qty: 2500	Europe - 2500	25000:€0.4289 15000:€0.4619 10000:€0.5009 5000:€0.5459 2500:€0.6679
FGD5T120SH DISTI # FGD5T120SH	ON Semiconductor	IGBT Transistors 1200V 5A Field Stop Trench IGBT (Alt: FGD5T120SH) RoHS: Compliant Min Qty: 2500	Asia - 0	125000:$0.5671 62500:$0.5765 25000:$0.5964 12500:$0.6177 7500:$0.6406 5000:$0.6652 2500:$0.6918
FGD5T120SH DISTI # FGD5T120SH	ON Semiconductor	IGBT Transistors 1200V 5A Field Stop Trench IGBT - Tape and Reel (Alt: FGD5T120SH) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.4269 15000:$0.4369 10000:$0.4429 5000:$0.4489 2500:$0.4519
FGD5T120SH DISTI # 84Y5829	ON Semiconductor	IGBT, SINGLE, N-CH, 1.2KV, 10A, TO-252-3,DC Collector Current:10A,Collector Emitter Saturation Voltage Vce(on):2.9V,Power Dissipation Pd:69W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-252,No. of RoHS Compliant: Yes	2305	1000:$0.6090 500:$0.7490 250:$0.7920 100:$0.8360 50:$0.9110 25:$0.9870 10:$1.0600 1:$1.2300
FGD5T120SH DISTI # 512-FGD5T120SH	ON Semiconductor	IGBT Transistors 1200V 5A Field Stop Trench IGBT RoHS: Compliant	2341	1:$1.1300 10:$0.9690 100:$0.7440 500:$0.6580 1000:$0.5190 2500:$0.4610 10000:$0.4430
FGD5T120SH DISTI # 2565212	ON Semiconductor	IGBT, SINGLE, N-CH, 1.2KV, 10A, TO-252-3 RoHS: Compliant	4805	1000:$0.8570 500:$1.1000 100:$1.3200 10:$1.7000 1:$1.8800
FGD5T120SH DISTI # XSKDRABV0047541	ON SEMICONDUCTOR	RoHS: Compliant	7500 in Stock0 on Order	7500:$0.6467 2500:$0.6929
FGD5T120SH DISTI # 2565212	ON Semiconductor	IGBT, SINGLE, N-CH, 1.2KV, 10A, TO-252-3	4740	500:£0.5120 250:£0.5460 100:£0.5790 10:£0.8110 1:£1.0000

Image	Part #	Description
	Mfr.#: HGTD1N120BNS9A OMO.#: OMO-HGTD1N120BNS9A	IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
	Mfr.#: STGD5NB120SZT4 OMO.#: OMO-STGD5NB120SZT4	IGBT Transistors N-Ch 1200 Volt 5 Amp
	Mfr.#: VS-8EWS16SLHM3 OMO.#: OMO-VS-8EWS16SLHM3	Rectifiers 8A If, 1600V Vr TO-252AA (DPAK)
	Mfr.#: S3N OMO.#: OMO-S3N	Rectifiers 3A, 1200V Surface Mount Rectifier
	Mfr.#: TLP5774(TP,E OMO.#: OMO-TLP5774-TP-E	Logic Output Optocouplers Gate Drive Coupler 10V 4A
	Mfr.#: ATTINY412-SSFR OMO.#: OMO-ATTINY412-SSFR	8-bit Microcontrollers - MCU 20MHz, 4KB, SOIC8, Ind 125C, Green, T&R
	Mfr.#: LVT12R0100FER OMO.#: OMO-LVT12R0100FER	Current Sense Resistors - SMD 0.01 ohm 1% 1.0W Current Sense
	Mfr.#: HGTD1N120BNS9A OMO.#: OMO-HGTD1N120BNS9A-ON-SEMICONDUCTOR	IGBT 1200V 5.3A 60W TO252AA
	Mfr.#: ATTINY412-SSFR OMO.#: OMO-ATTINY412-SSFR-MICROCHIP-TECHNOLOGY	MCU 8-bit AVR RISC 4KB Flash 3.3V/5V 8-Pin SOIC N T/R
	Mfr.#: STGD5NB120SZT4 OMO.#: OMO-STGD5NB120SZT4-STMICROELECTRONICS	IGBT Transistors N-Ch 1200 Volt 5 Amp

FGD5T120SH

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes