FGA40S65SH

Mfr. #:: FGA40S65SH
Manufacturer:: ON Semiconductor / Fairchild
Description:: IGBT Transistors 650V 40A Field Stop Trench IGBT
Lifecycle:: New from this manufacturer.
Datasheet:: FGA40S65SH Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: FGA40S65SH more Information

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: IGBT Transistors

RoHS:: Y

Technology:: Si

Package / Case:: TO-3PN-3

Mounting Style:: Through Hole

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 650 V

Collector-Emitter Saturation Voltage:: 1.4 V

Maximum Gate Emitter Voltage:: 20 V

Continuous Collector Current at 25 C:: 80 A

Pd - Power Dissipation:: 268 W

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Series:: FGA40S65SH

Packaging:: Tube

Continuous Collector Current Ic Max:: 80 A

Brand:: ON Semiconductor / Fairchild

Gate-Emitter Leakage Current:: +/- 400 nA

Product Type:: IGBT Transistors

Factory Pack Quantity:: 450

Subcategory:: IGBTs

Unit Weight:: 0.225789 oz

Tags: FGA40, FGA4, FGA

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Step1:
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FGA40S65SH Description

***ark: 650V FS Gen3 Trench IGBT - 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED

***ow.cn: Trans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-3P Tube

***emi: IGBT, 650 V, 40 A Field Stop Trench

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel

*** Electronic Components: IGBT Transistors 650V 40A Field Stop Trench IGBT

***nell: FAST & ULTRAFAST RECOVERY RECTIFIERS;

***rchild Semiconductor: Using Fairchild®’s proprietary trench design and advanced field stop IGBT technology, 650V field stop offers superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

***et: Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3PF Tube

***r Electronics: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel

***icroelectronics SCT: Short-circuit rugged IGBT, TO-3PF, Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW40N65R5XKSA1

***ineon SCT: Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

***ure Electronics: IHW50N65R5 Series 650 V 80 A 282 W Reverse Conducting IGBT - PG-TO-247-3

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:282W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW50N65R5XKSA1

***ineon SCT: Infineon combines the industry leading performance of the TRENCHSTOP™ 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices, PG-TO247-3, RoHS

***ineon: Infineon combines the industry leading performance of the TRENCHSTOP 5 family with the technology innovation of the reverse conducting RC-H IGBTs to create a new generation of best-in-class devices. With a monolithically integrated diode, the 650V RC-H5 IGBTs are perfectly suited for soft switching applications such as induction cooking stoves and inverterized microwave ovens, but are also suitable for designs which require some hard switching capabilities as well. | Summary of Features: Lowest V CE(sat) and optimized E off for loss reduction up to 30% compared to previous generation; 650V blocking voltage; Hard switching capable | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature for higher device reliability; 50V higher voltage possible for increased reliability; Performs well in designs with higher switching frequencies up to 40kHz | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Other resonant switching topologies

*** Stop Electro: Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247

***ark: Igbt, Single, 650V, 80A, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.4V; Power Dissipation Pd:230W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IKW40N65WR5XKSA1

***ineon: The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar. | Summary of Features: Optimized for full rated hard switching turn off typically found in Welding; Very low V ce(sat) of 1.35V @25C; Low E tot; Soft recovery and low Q rr for diode; Good R goff controllability | Benefits: Best price/performance ratio; Good fit to mainstream design of fsw>20kHz; Low T j & T c for lower heatsink and cooling cost | Target Applications: Welding; UPS; Solar

***roFlash: Igbt Single Transistor, 80 A, 1.7 V, 366 W, 650 V, To-247, 3 Rohs Compliant: Yes

***ical: Trans IGBT Chip N-CH 650V 80A 36000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: NGTB40N65: 650 V 80 A 366 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/40A FAST IGBT FSII T; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 366W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

***ical: Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube

***icroelectronics: Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

***nell: IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:

FGA40S65SH More Information

Field Stop IGBTs: ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.

FGAFx0N60 Field Stop IGBTs: ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.

FGA40S65SH Field Stop Trench IGBT: ON Semiconductor FGA40S65SH Field Stop Trench IGBT uses a proprietary trench design and advanced field stop IGBT technology. The FGA40S65SH IGBT features superior conduction, switching performance, and easy parallel operation. This IGBT is well suited for the resonant or soft switching applications like induction heating and Micro-Wave Office™ (MWO).

Market price

Part #	Mfg.	Description	Stock	Price
FGA40S65SH DISTI # V99:2348_16116321	ON Semiconductor	650V FS GEN3 TRENCH IGBT	450	1:$1.4899
FGA40S65SH DISTI # FGA40S65SH-ND	ON Semiconductor	650V FS GEN3 TRENCH IGBT RoHS: Compliant Min Qty: 450 Container: Tube	Temporarily Out of Stock	450:$2.5561
FGA40S65SH DISTI # 26743385	ON Semiconductor	650V FS GEN3 TRENCH IGBT	1350	450:$2.4057
FGA40S65SH DISTI # 25895796	ON Semiconductor	650V FS GEN3 TRENCH IGBT	450	4:$1.4899
FGA40S65SH DISTI # FGA40S65SH	ON Semiconductor	650V FS Gen3 Trench IGBT - Bulk (Alt: FGA40S65SH) Min Qty: 172 Container: Bulk	Americas - 0	344:$1.7900 516:$1.7900 860:$1.7900 1720:$1.7900 172:$1.8900
FGA40S65SH DISTI # FGA40S65SH	ON Semiconductor	650V FS Gen3 Trench IGBT - Rail/Tube (Alt: FGA40S65SH) RoHS: Compliant Min Qty: 450 Container: Tube	Americas - 0	1800:$1.5900 2700:$1.5900 4500:$1.5900 450:$1.6900 900:$1.6900
FGA40S65SH DISTI # 512-FGA40S65SH	ON Semiconductor	IGBT Transistors 650V 40A Field Stop Trench IGBT RoHS: Compliant	287	1:$3.4800 10:$2.9600 100:$2.5600 250:$2.4300 500:$2.1800 1000:$1.8400 2500:$1.7500
FGA40S65SH	Fairchild Semiconductor Corporation	RoHS: Not Compliant	876	1000:$1.9200 500:$2.0200 100:$2.1100 25:$2.2000 1:$2.3600

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FGA40S65SH

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes