SIHB30N60E-E3

SIHB30N60E-E3
Mfr. #:
SIHB30N60E-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Datasheet:
SIHB30N60E-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHB30N60E-E3 DatasheetSIHB30N60E-E3 Datasheet (P4-P6)SIHB30N60E-E3 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-263-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
29 A
Rds On - Drain-Source Resistance:
125 mOhms
Vgs th - Gate-Source Threshold Voltage:
2.8 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
85 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
250 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
E
Brand:
Vishay / Siliconix
Fall Time:
36 ns
Product Type:
MOSFET
Rise Time:
32 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
63 ns
Typical Turn-On Delay Time:
19 ns
Unit Weight:
0.050717 oz
Tags
SIHB30N60E, SIHB30, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 29A 3-Pin D2PAK
***i-Key
MOSFET N-CH 600V 29A D2PAK
***ark
N-CHANNEL 600V
Part # Mfg. Description Stock Price
SIHB30N60E-E3
DISTI # SIHB30N60E-E3-ND
Vishay SiliconixMOSFET N-CH 600V 29A D2PAK
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    SIHB30N60E-E3
    DISTI # SIHB30N60E-E3
    Vishay IntertechnologiesTrans MOSFET N-CH 600V 29A 3-Pin D2PAK - Tape and Reel (Alt: SIHB30N60E-E3)
    RoHS: Not Compliant
    Min Qty: 1000
    Container: Reel
    Americas - 0
      SIHB30N60E-E3
      DISTI # 781-SIHB30N60E-E3
      Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
      RoHS: Compliant
      0
        SIHB30N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
        RoHS: Compliant
        Americas -
          Image Part # Description
          SIHB30N60AEL-GE3

          Mfr.#: SIHB30N60AEL-GE3

          OMO.#: OMO-SIHB30N60AEL-GE3

          MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
          SIHB30N60E-E3

          Mfr.#: SIHB30N60E-E3

          OMO.#: OMO-SIHB30N60E-E3

          MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
          SIHB30N60E-E3

          Mfr.#: SIHB30N60E-E3

          OMO.#: OMO-SIHB30N60E-E3-VISHAY

          RF Bipolar Transistors MOSFET N-Channel 600V
          SIHB30N60AEL-GE3

          Mfr.#: SIHB30N60AEL-GE3

          OMO.#: OMO-SIHB30N60AEL-GE3-VISHAY

          MOSFET N-CHAN 600V D2PAK
          SIHB30N60E-GE3-CUT TAPE

          Mfr.#: SIHB30N60E-GE3-CUT TAPE

          OMO.#: OMO-SIHB30N60E-GE3-CUT-TAPE-1190

          New and Original
          SIHB30N60E

          Mfr.#: SIHB30N60E

          OMO.#: OMO-SIHB30N60E-1190

          New and Original
          SIHB30N60E-GE3

          Mfr.#: SIHB30N60E-GE3

          OMO.#: OMO-SIHB30N60E-GE3-VISHAY

          MOSFET N-CH 600V 29A D2PAK
          SIHB30N60EGE3

          Mfr.#: SIHB30N60EGE3

          OMO.#: OMO-SIHB30N60EGE3-1190

          Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
          Availability
          Stock:
          Available
          On Order:
          4000
          Enter Quantity:
          Current price of SIHB30N60E-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
          Start with
          Newest Products
          • -12 V and -20 V P-Channel Gen III MOSFETs
            Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
          • Compare SIHB30N60E-E3
            SIHB30N60E vs SIHB30N60EE3 vs SIHB30N60EGE3
          • DG2788A Dual DPDT / Quad SPDT Analog Switch
            Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
          • Smart Load Switches
            Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
          • SUM70101EL 100 V P-Channel MOSFET
            Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
          • DGQ2788A AEC-Q100 Qualified Analog Switch
            The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
          Top