BSB028N06NN3GXUMA1

Mfr. #:: BSB028N06NN3GXUMA1
Manufacturer:: Infineon Technologies
Description:: MOSFET N-CH 60V 22A WDSON-2
Lifecycle:: New from this manufacturer.
Datasheet:: BSB028N06NN3GXUMA1 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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Tags: BSB028N06NN3G, BSB028, BSB02, BSB0, BSB

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We provide 90-360 days warranty.

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Email: info@omo-ic.com

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Vacuum Packaging with PL

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BSB028N06NN3GXUMA1 Description

***ure Electronics: Single N-Channel 60 V 2.8 mOhm 108 nC OptiMOS Power Mosfet - MG-WDSON-2

***ineon SCT: OptiMOS™ 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger, MG-WDSON-2, RoHS

***nell: MOSFET, N CH, 60V, 90A, WDSON-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 90A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 78W; Transistor Case Style: WDSON; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS 60V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Excellent gate charge x R DS(on) product (FOM); Very low on-resistance R DS(on); Ideal for fast switching applications; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches

***ineon SCT: 40V, N-Ch, 2.4 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T2, PG-TO220-3, RoHS

***et: Trans MOSFET N-CH 40V 100A 3-Pin TO-220 Tube

***ponent Stockers USA: 100 A 40 V 0.0027 ohm N-CHANNEL Si POWER MOSFET TO-220AB

***ineon: Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 60V 110A 3-Pin(3+Tab) TO-220AB Tube

***et: MOSFET, 60V, 110A, 5.1 MOHM, 88 NC QG, TO-220AB

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 160 W

*** Stop Electro: Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0042Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V; Msl:- Rohs Compliant: Yes

***eco: MOSFET Transistor N-Channel 60 V 95A (Tc) 125W (Tc) Through Hole TO-220

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 60 V 5.9 mOhm 75 nC HEXFET® Power Mosfet - TO-220-3

***p One Stop: Trans MOSFET N-CH 60V 95A 3-Pin(3+Tab) TO-220AB Tube

***et: MOSFET, 60V, 95A, 5.9 MOHM, 75 NC QG, TO-220AB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***ical: Trans MOSFET N-CH 40V 100A Automotive 3-Pin(3+Tab) TO-220AB Rail

***ark: N CH MOSFET, TRENCH AUTO, 40V, 120A, 3TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.05mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes

***el Electronic: Logic - Buffers, Drivers, Receivers, Transceivers 5-TSSOP, SC-70-5, SOT-353 1 (Unlimited) Tape & Reel (TR) Surface Mount Buffer, Non-Inverting 3V~5.5V -55°C~125°C TA 8mA 8mA 3-State Buffer/Line Driver 1-CH Non-Inverting 3-ST CMOS 5-Pin SC-70 T/R

***i-Key: MOSFET N-CH 40V 100A TO220AB

***el Electronic: Processor Supervisor 2.93V 1.2V to 4.9V 3-Pin SOT-23 T/R

***peria: N-channel TrenchMOS logic level FET

***et: MOS Power Transistors LV (< 200V)

***et: Trans MOSFET N-CH 75V 192A 3-Pin(3+Tab) TO-220AB Rail

***i-Key: MOSFET N-CH 75V 100A TO220AB-3

***peria: N-channel TrenchMOS standard level FET

Market price

Part #	Mfg.	Description	Stock	Price
BSB028N06NN3GXUMA1 DISTI # V72:2272_06382902	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant	5000	75000:$0.9215 30000:$0.9319 15000:$0.9423 6000:$0.9527 3000:$1.0777 1000:$1.0893 500:$1.3262 250:$1.6272 100:$1.6441 50:$2.0590 25:$2.0799 10:$2.1008 1:$2.5903
BSB028N06NN3GXUMA1 DISTI # BSB028N06NN3GXUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 22A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	9878In Stock	1000:$1.1761 500:$1.4195 100:$1.7277 10:$2.1490 1:$2.3900
BSB028N06NN3GXUMA1 DISTI # BSB028N06NN3GXUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 22A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	9878In Stock	1000:$1.1761 500:$1.4195 100:$1.7277 10:$2.1490 1:$2.3900
BSB028N06NN3GXUMA1 DISTI # BSB028N06NN3GXUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 22A WDSON-2 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	5000In Stock	10000:$0.9975 5000:$1.0237
BSB028N06NN3GXUMA1 DISTI # 32529013	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant	35000	5000:$1.4344
BSB028N06NN3GXUMA1 DISTI # 32461338	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant	20000	5000:$1.5938
BSB028N06NN3GXUMA1 DISTI # 31314389	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R RoHS: Compliant	5000	9:$2.5903
BSB028N06NN3G DISTI # BSB028N06NN3GXUMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.7619 30000:$0.7759 20000:$0.8029 10000:$0.8329 5000:$0.8639
BSB028N06NN3GXUMA1	Infineon Technologies AG	Single N-Channel 60 V 2.8 mOhm 108 nC OptiMOS Power Mosfet - MG-WDSON-2 RoHS: Compliant	55000Reel	5000:$1.0200
BSB028N06NN3GXUMA1	Infineon Technologies AG	Single N-Channel 60 V 2.8 mOhm 108 nC OptiMOS Power Mosfet - MG-WDSON-2 RoHS: Compliant	31883Cut Tape/Mini-Reel	1:$1.3700 100:$1.2200 250:$1.1900 500:$1.1700 1500:$1.1300
BSB028N06NN3 G DISTI # 726-BSB028N06NN3G	Infineon Technologies AG	MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3 RoHS: Compliant	9617	1:$2.2000 10:$1.8700 100:$1.5000 500:$1.3100 1000:$1.0800 2500:$1.0100 5000:$0.9760
BSB028N06NN3GXUMA1 DISTI # 9064306P	Infineon Technologies AG	MOSFET N-CHANNEL 60V 22A OPTIMOS WDSON7, RL	4995	100:£1.0100 50:£1.2620
BSB028N06NN3GXUMA1 DISTI # 2443367	Infineon Technologies AG	MOSFET, N CH, 60V, 90A, WDSON-3 RoHS: Compliant	4956	10000:$1.4400 5000:$1.5000 2500:$1.5600 1000:$1.6700 500:$2.0100 100:$2.3100 10:$2.8800 1:$3.3900
BSB028N06NN3GXUMA1 DISTI # 2443367RL	Infineon Technologies AG	MOSFET, N CH, 60V, 90A, WDSON-3 RoHS: Compliant	0	10000:$1.4400 5000:$1.5000 2500:$1.5600 1000:$1.6700 500:$2.0100 100:$2.3100 10:$2.8800 1:$3.3900
BSB028N06NN3GXUMA1 DISTI # 2443367	Infineon Technologies AG	MOSFET, N CH, 60V, 90A, WDSON-3	4956	500:£0.6280 250:£0.6500 100:£0.6730 25:£0.6960 5:£0.8460
BSB028N06NN3GXUMA1 DISTI # XSFP00000172466	Infineon Technologies AG	RoHS: Compliant	62217 in Stock0 on Order	62217:$1.3600 5000:$1.4600

Image	Part #	Description
	Mfr.#: BSB028N06NN3 G OMO.#: OMO-BSB028N06NN3-G	MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
	Mfr.#: BSB028N06NN3 OMO.#: OMO-BSB028N06NN3-1190	New and Original
	Mfr.#: BSB028N06NN3 G OMO.#: OMO-BSB028N06NN3-G-1190	MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
	Mfr.#: BSB028N06NN3G OMO.#: OMO-BSB028N06NN3G-1190	Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1)
	Mfr.#: BSB028N06NN3GXUMA1 OMO.#: OMO-BSB028N06NN3GXUMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 22A WDSON-2

BSB028N06NN3GXUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes