BSB028N06NN3 G

BSB028N06NN3 G
Mfr. #:
BSB028N06NN3 G
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
Lifecycle:
New from this manufacturer.
Datasheet:
BSB028N06NN3 G Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
BSB028N06NN3 G more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
WDSON-2-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
60 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
2.8 mOhms
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
108 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
78 W
Configuration:
Single
Tradename:
OptiMOS
Packaging:
Reel
Height:
0.7 mm
Length:
6.35 mm
Series:
OptiMOS 3
Transistor Type:
1 N-Channel
Width:
5.05 mm
Brand:
Infineon Technologies
Fall Time:
6 ns
Moisture Sensitive:
Yes
Product Type:
MOSFET
Rise Time:
9 ns
Factory Pack Quantity:
5000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
38 ns
Typical Turn-On Delay Time:
21 ns
Part # Aliases:
BSB028N06NN3GXUMA1 BSB28N6NN3GXT SP000605956
Tags
BSB028N06NN3G, BSB028, BSB02, BSB0, BSB
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
BSB OptiMOS Power MOSFETs
Infineon Technologies BSB OptiMOS™ Power MOSFETs offer highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS™ 30 V or 60V the best choice for the demanding requirements of switched mode power supplies in servers, datacom and telecom applications.-BSB OptiMOS Power MOSFETs 30V feature super fast switching control FETs together with low EMI sync FETs to provide solutions that are easy to design in. BSB OptiMOS™ Power MOSFETs are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space- efficiency and cost. BSB OptiMOS™ Power MOSFETs products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.-With almost no parasitic package inductances, BSB OptiMOS Power MOSFETs 60V allow best controllability of the gate in highly dynamic switching environments. In addition, BSB OptiMOS Power MOSFETs 60V feature best cooling capability through top-side cooling of the metal can. This packaging technology combined with the OptiMOS silicon enables highest efficiency levels while having minimal space requirements at the same time.Learn More
Part # Mfg. Description Stock Price
BSB028N06NN3GXUMA1
DISTI # V72:2272_06382902
Infineon Technologies AGTrans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R
RoHS: Compliant
5000
  • 75000:$0.8675
  • 30000:$0.8680
  • 15000:$0.8688
  • 6000:$0.8802
  • 3000:$0.8890
  • 1000:$0.8951
  • 500:$0.9284
  • 250:$1.0326
  • 100:$1.1238
  • 50:$1.1956
  • 25:$1.3613
  • 10:$1.3976
  • 1:$1.5758
BSB028N06NN3GXUMA1
DISTI # BSB028N06NN3GXUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 60V 22A WDSON-2
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$1.0725
BSB028N06NN3GXUMA1
DISTI # BSB028N06NN3GXUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 60V 22A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5000In Stock
  • 1000:$1.2321
  • 500:$1.4871
  • 100:$1.9119
  • 10:$2.3790
  • 1:$2.6300
BSB028N06NN3GXUMA1
DISTI # BSB028N06NN3GXUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 60V 22A WDSON-2
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5000In Stock
  • 1000:$1.2321
  • 500:$1.4871
  • 100:$1.9119
  • 10:$2.3790
  • 1:$2.6300
BSB028N06NN3GXUMA1
DISTI # 31314389
Infineon Technologies AGTrans MOSFET N-CH Si 60V 22A 7-Pin WDSON T/R
RoHS: Compliant
5000
  • 3000:$0.9037
  • 1000:$0.9052
  • 500:$0.9343
  • 250:$1.0383
  • 100:$1.1308
  • 50:$1.2022
  • 25:$1.3677
  • 10:$1.4045
  • 9:$1.5826
BSB028N06NN3G
DISTI # BSB028N06NN3GXUMA1
Infineon Technologies AGTrans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.8639
  • 10000:$0.8329
  • 20000:$0.8029
  • 30000:$0.7759
  • 50000:$0.7619
BSB028N06NN3 G
DISTI # 726-BSB028N06NN3G
Infineon Technologies AGMOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
RoHS: Compliant
5080
  • 1:$2.2100
  • 10:$1.8800
  • 100:$1.5000
  • 500:$1.3200
  • 1000:$1.0900
  • 2500:$1.0200
  • 5000:$0.9760
BSB028N06NN3GXUMA1
DISTI # 9064306P
Infineon Technologies AGMOSFET N-CHANNEL 60V 22A OPTIMOS WDSON7, RL5000
  • 50:£1.2740
  • 100:£1.0200
BSB028N06NN3GXUMA1
DISTI # 2443367
Infineon Technologies AGMOSFET, N CH, 60V, 90A, WDSON-3
RoHS: Compliant
4981
  • 5:£1.5300
  • 25:£1.2700
  • 100:£1.0200
  • 250:£1.0100
  • 500:£0.9960
BSB028N06NN3GXUMA1
DISTI # 2443367
Infineon Technologies AGMOSFET, N CH, 60V, 90A, WDSON-3
RoHS: Compliant
4981
  • 1:$3.5000
  • 10:$2.9800
  • 100:$2.3800
  • 500:$2.0900
  • 1000:$1.7300
  • 2500:$1.6200
  • 5000:$1.5500
BSB028N06NN3GXUMA1
DISTI # 2443367RL
Infineon Technologies AGMOSFET, N CH, 60V, 90A, WDSON-3
RoHS: Compliant
0
  • 1:$3.5000
  • 10:$2.9800
  • 100:$2.3800
  • 500:$2.0900
  • 1000:$1.7300
  • 2500:$1.6200
  • 5000:$1.5500
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New and Original
Availability
Stock:
Available
On Order:
1992
Enter Quantity:
Current price of BSB028N06NN3 G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.20
$2.20
10
$1.87
$18.70
100
$1.50
$150.00
500
$1.31
$655.00
1000
$1.08
$1 080.00
2500
$1.01
$2 525.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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