IRFR224TRLPBF

Mfr. #:: IRFR224TRLPBF
Manufacturer:: Vishay / Siliconix
Description:: MOSFET N-Chan 250V 3.8 Amp
Lifecycle:: New from this manufacturer.
Datasheet:: IRFR224TRLPBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRFR224TRLPBF Datasheet IRFR224TRLPBF Datasheet (P4-P6)IRFR224TRLPBF Datasheet (P7-P9)IRFR224TRLPBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Vishay

Product Category:: MOSFET

RoHS:: E

Technology:: Si

Packaging:: Reel

Series:: IRFR

Brand:: Vishay / Siliconix

Product Type:: MOSFET

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Unit Weight:: 0.050717 oz

Tags: IRFR224T, IRFR224, IRFR22, IRFR2, IRFR, IRF

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We provide 90-360 days warranty.

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IRFR224TRLPBF Description

*** Source Electronics: Trans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 250V 3.8A DPAK

***et: MOSFET N-CHANNEL 250V

***enic: TO-252-3 MOSFETs ROHS

*** Europe: N-CH SINGLE 250V TO252

***: 250V N-CH HEXFET D-PAK

***ure Electronics: Single N-Channel 250 V 1.1 Ohm 42 W Surface Mount Power Mosfet - TO-252-3

***ark: N Channel Mosfet, 250V, 3.8A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; On Resistance Rds(On):1.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

*** Stop Electro: Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.8 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 1.1 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42

***th Star Micro: Transistor MOSFET N-CH 200V 4.8A 3-Pin (2+Tab) DPAK

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:4.8A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, 200V, 4.8A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:4.8A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:42W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:4.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:19A; SMD Marking:IRFR220; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 200 V 0.8 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: Channel Type:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.8A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:42W; No. Of Pins:3Pins Rohs Compliant: No

***emi: N-Channel Power MOSFET, QFET®, 250 V, 4.4 A, 1 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***i-Key: MOSFET P-CH 250V 4.7A DPAK

***ser: MOSFETs 250V P-Ch QFET

***-Wing Technology: P-CHANNEL POWER MOSFET

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

***el Nordic: Contact for details

***emi: N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 3.8 A, 1.2 Ω, DPAK

***nell: MOSFET, N-CH, 200V, 3.8A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.94ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 37W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: QFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***r Electronics: Power Field-Effect Transistor, 3.8A I(D), 200V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Market price

Part #	Mfg.	Description	Stock	Price
IRFR224TRLPBF DISTI # IRFR224TRLPBF-ND	Vishay Siliconix	MOSFET N-CH 250V 3.8A DPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.7425
IRFR224TRLPBF DISTI # IRFR224TRLPBF	Vishay Intertechnologies	Trans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR224TRLPBF) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.6179 6000:€0.4219 12000:€0.3629 18000:€0.3349 30000:€0.3119
IRFR224TRLPBF DISTI # IRFR224TRLPBF	Vishay Intertechnologies	Trans MOSFET N-CH 250V 3.8A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR224TRLPBF) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.5069 6000:$0.4919 12000:$0.4719 18000:$0.4589 30000:$0.4469
IRFR224TRLPBF DISTI # 844-IRFR224TRLPBF	Vishay Intertechnologies	MOSFET N-Chan 250V 3.8 Amp RoHS: Compliant	0	1:$1.2900 10:$1.0600 100:$0.8130 500:$0.6990 1000:$0.5520 3000:$0.5150 6000:$0.4900 9000:$0.4710
IRFR224TRLPBF	Vishay Intertechnologies	MOSFET N-Chan 250V 3.8 Amp RoHS: Compliant	Americas -

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Availability

Stock:: Available
On Order:: 1985
Enter Quantity:

Current price of IRFR224TRLPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$1.28~~; ~~$1.28~~

10: ~~$1.05~~; ~~$10.50~~

100: ~~$0.81~~; ~~$81.20~~

500: ~~$0.70~~; ~~$349.00~~

1000: ~~$0.55~~; ~~$551.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IRFR224TRLPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes