BSP613PH6327XTSA1

Mfr. #:: BSP613PH6327XTSA1
Manufacturer:: Infineon Technologies
Description:: MOSFET P-Ch -60V -2.9A SOT-223-3
Lifecycle:: New from this manufacturer.
Datasheet:: BSP613PH6327XTSA1 Datasheet
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More Information:: BSP613PH6327XTSA1 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: PG-SOT-223-4

Number of Channels:: 1 Channel

Transistor Polarity:: P-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 2.9 A

Rds On - Drain-Source Resistance:: 130 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.1 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 22 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 1.8 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 1.6 mm

Length:: 6.5 mm

Series:: BSP613

Transistor Type:: 1 P-Channel

Width:: 3.5 mm

Brand:: Infineon Technologies

Forward Transconductance - Min:: 2.7 S

Fall Time:: 7 ns

Product Type:: MOSFET

Rise Time:: 9 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 26 ns

Typical Turn-On Delay Time:: 6.7 ns

Part # Aliases:: BSP613P H6327 SP001058788

Unit Weight:: 0.003951 oz

Tags: BSP613PH, BSP613P, BSP613, BSP61, BSP6, BSP

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

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BSP613PH6327XTSA1 Description

*** Electronics: BSP613PH6327XTSA1 P-Channel MOSFET, 2.9 A, 60 V SIPMOS, 3 + Tab-Pin SOT-223 Infineon

*** Stop Electro: Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA

***p One Stop: Trans MOSFET P-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Small Signal Mosfet - SOT-223

***nell: MOSFET, P-CH, -60V, -2.9A, SOT-223-4; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.9A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.9 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 130 / Gate-Source Voltage V = 20 / Fall Time ns = 7 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 6.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 1.8

***p One Stop Global: Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: Single N-Channel 60 V 120 mOhm 9.7 nC SIPMOS® Small Signal Mosfet - SOT-223

***ark: MOSFET, N-CH, 60V, 2.9A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

*** Source Electronics: MOSFET N-CH 100V 3.2A SOT-223-4 / Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R

***ure Electronics: FDT86106LZ Series 100 V 3.2 A 108 mOhm N-Ch PowerTrench Mosfet - SOT-223-3

***emi: N-Channel PowerTrench® MOSFET 100V, 3.2A, 108mΩ

***nell: MOSFET, N CH, 100V, 3.2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.2V

***rchild Semiconductor: This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

***emi: N-Channel PowerTrench® MOSFET, 100V, 3.7A, 120mΩ

***ure Electronics: N-Channel 100 V 120 mOhm SMT PowerTrench Mosfet- SOT-223

***essParts.Net: FAIRCHILD FDT3612 / MOSFET N-CH 100V 3.7A SOT-223 D/C D1025AC

***ical: Trans MOSFET N-CH 100V 3.7A 4-Pin (3+Tab) SOT-223 T/R

***ment14 APAC: MOSFET, N CH, 100V, 3.7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:10.2A; Package / Case:SOT-223; Power Dissipation Pd:3W; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

*** Source Electronics: Trans MOSFET N-CH 100V 3.3A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 3.3A SOT223

***ure Electronics: N-Channel 100 V 0.1 ohm Surface Mount PowerTrench Mosfet - SOT-223

***emi: N-Channel PowerTrench® MOSFET 100V, 3.3A, 100mΩ

***enic: 100V 3.3A 2.2W 100m´Î@10V3.3A 2.5V@250Ã×A N Channel SOT-223-4 MOSFETs ROHS

***nell: MOSFET, N CH, 100V, 3.3A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.5V

***rchild Semiconductor: This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.

***ure Electronics: Single N-Channel 55 V 0.045 Ohm 23 nC HEXFET® Power Mosfet - SOT-223

*** Source Electronics: Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A) | MOSFET N-CH 55V 3.7A SOT223

***ineon SCT: 55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

***(Formerly Allied Electronics): MOSFET, 55V, 3.7A, 45 mOhm, 23 nC Qg, SOT-223

***p One Stop Global: Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 Tube

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-223 Polarity: N Power dissipation: 2.1 W

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:5.2A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ure Electronics: P-Channel 70 V 0.16 Ohm Power MOSFET Surface Mount - SOT-223-3

***p One Stop: Trans MOSFET P-CH 70V 3.7A Automotive 4-Pin(3+Tab) SOT-223 T/R

***icontronic: Power Field-Effect Transistor, 3.7A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

BSP613PH6327XTSA1 More Information

Small Signal Power MOSFETs: Infineon Small Signal Power MOSFETs are available in 7 industry-standard package types ranging from the largest SOT-223 down to the smallest SOT-363 measuring 2.1mm x 2mm x 0.9mm. These are offered in single, dual and complementary configurations. They are available in N-Channel, P-Channel or Complementary (both P-Channel and N-Channel within the same package) versions to meet a variety of design requirements. Typical applications for these devices include battery protection, LED lighting, low voltage drives, and DC/DC converters. Each of these Small Signal Power MOSFETs are also qualified to Automotive AEC Q101.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
BSP613PH6327XTSA1 DISTI # V36:1790_06391746	Infineon Technologies AG	Trans MOSFET P-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	0	1000000:$0.4382 500000:$0.4387 100000:$0.4864 10000:$0.5770 1000:$0.5925
BSP613PH6327XTSA1 DISTI # V72:2272_06391746	Infineon Technologies AG	Trans MOSFET P-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS: Compliant	0
BSP613PH6327XTSA1 DISTI # BSP613PH6327XTSA1CT-ND	Infineon Technologies AG	MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2621In Stock	500:$0.6442 100:$0.7798 10:$1.0000 1:$1.1200
BSP613PH6327XTSA1 DISTI # BSP613PH6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2621In Stock	500:$0.6442 100:$0.7798 10:$1.0000 1:$1.1200
BSP613PH6327XTSA1 DISTI # BSP613PH6327XTSA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 2.9A SOT-223 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	10000:$0.4213 5000:$0.4378 2000:$0.4608 1000:$0.4938
BSP613PH6327XTSA1 DISTI # BSP613PH6327XTSA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP613PH6327XTSA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.3179 6000:$0.3239 4000:$0.3349 2000:$0.3479 1000:$0.3609
BSP613PH6327XTSA1 DISTI # BSP613PH6327XTSA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R - Bulk (Alt: BSP613PH6327XTSA1) RoHS: Compliant Min Qty: 926 Container: Bulk	Americas - 0
BSP613PH6327XTSA1 DISTI # BSP613P H6327	Infineon Technologies AG	Trans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R (Alt: BSP613P H6327) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$0.4063 25000:$0.4115 10000:$0.4169 5000:$0.4224 3000:$0.4338 2000:$0.4458 1000:$0.4586
BSP613PH6327XTSA1 DISTI # SP001058788	Infineon Technologies AG	Trans MOSFET P-CH 60V 2.9A 4-Pin SOT-223 T/R (Alt: SP001058788) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€0.3489 6000:€0.3759 4000:€0.4079 2000:€0.4449 1000:€0.5439
BSP613PH6327XTSA1 DISTI # 29X1531	Infineon Technologies AG	MOSFET Transistor, P Channel, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V RoHS Compliant: Yes	18	500:$0.6020 100:$0.6820 10:$0.8870 1:$1.0300
BSP613P H6327 DISTI # 726-BSP613PH6327	Infineon Technologies AG	MOSFET P-Ch -60V -2.9A SOT-223-3 RoHS: Compliant	0	1:$1.0200 10:$0.8780 100:$0.6750 500:$0.5960 1000:$0.4710
BSP613PH6327XTSA1 DISTI # 726-BSP613PH6327XTSA	Infineon Technologies AG	MOSFET P-Ch -60V -2.9A SOT-223-3 RoHS: Compliant	0	1:$1.0200 10:$0.8780 100:$0.6750 500:$0.5960 1000:$0.4710
BSP613PH6327XTSA1 DISTI # 8922236P	Infineon Technologies AG	MOSFET P-CHANNEL 60V 2.9A SOT223-4, RL	2500	2500:£0.4150 1000:£0.4240 500:£0.4320 100:£0.4380
BSP613PH6327XTSA1 DISTI # 8922236	Infineon Technologies AG	MOSFET P-CHANNEL 60V 2.9A SOT223-4, PK	1240	2500:£0.4150 1000:£0.4240 500:£0.4320 100:£0.4380 20:£0.5020
BSP613PH6327XTSA1 DISTI # BSP613PH6327XTSA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-60V,-2.9A,1.8W,PG-SOT223	995	100:$0.4741 10:$0.5451 3:$0.6791 1:$0.7906
BSP613PH6327XTSA1 DISTI # 2377261	Infineon Technologies AG	MOSFET, P-CH, -60V, -2.9A, SOT-223-4 RoHS: Compliant	1013	500:$0.9160 100:$1.0500 10:$1.3500 1:$1.5800
BSP613PH6327XTSA1 DISTI # 2377261	Infineon Technologies AG	MOSFET, P-CH, -60V, -2.9A, SOT-223-4	1984	500:£0.4630 250:£0.4940 100:£0.5250 10:£0.7410 1:£0.9060

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BSP613PH6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes