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SI1905BDH-T1-E3

SI1905BDH-T1-E3
Mfr. #:
SI1905BDH-T1-E3
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET 8.0V 0.63A 0.357W
Lifecycle:
New from this manufacturer.
Datasheet:
SI1905BDH-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
FETs - Arrays
Series
TrenchFETR
Packaging
Tape & Reel (TR)
Package-Case
6-TSSOP, SC-88, SOT-363
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Supplier-Device-Package
SC-70-6 (SOT-363)
FET-Type
2 P-Channel (Dual)
Power-Max
357mW
Drain-to-Source-Voltage-Vdss
8V
Input-Capacitance-Ciss-Vds
62pF @ 4V
FET-Feature
Logic Level Gate
Current-Continuous-Drain-Id-25°C
630mA
Rds-On-Max-Id-Vgs
542 mOhm @ 580mA, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Charge-Qg-Vgs
1.5nC @ 4.5V
Tags
SI1905BDH-T1, SI1905B, SI1905, SI190, SI19, SI1
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET P-CH 8V 0.58A 6-Pin SC-70 T/R
***i-Key
MOSFET 2P-CH 8V 0.63A SC70-6
***ponent Sense
MOSFET 8.0V 0.63A 0.357W
***ment14 APAC
P CHANNEL MOSFET, -8V, SC-70; Transistor Polarity:P Channel; Continuous Drain Current Id:-630mA; Drain Source Voltage Vds:-8V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs Typ:-1V
***
1.8V P-CHANNEL
***ark
Transistor; Continuous Drain Current, Id:-630mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):1.2ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:301mW ;RoHS Compliant: Yes
Part # Mfg. Description Stock Price
SI1905BDH-T1-E3
DISTI # SI1905BDH-T1-E3-ND		Vishay SiliconixMOSFET 2P-CH 8V 0.63A SC70-6
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Limited Supply - Call
    SI1905BDH-T1-E3
    DISTI # 781-SI1905BDH-E3    		Vishay IntertechnologiesMOSFET 8.0V 0.63A 0.357W
    RoHS: Compliant    		0
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      SI1905BDH-T1-E3

      Mfr.#: SI1905BDH-T1-E3

      OMO.#: OMO-SI1905BDH-T1-E3-VISHAY

      		 IGBT Transistors MOSFET 8.0V 0.63A 0.357W
      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of SI1905BDH-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
      Reference price (USD)
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      100
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      500
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      Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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