PartNumber | SI1905BDH-T1 | SI1905BDH-T1-GE3 | SI1905BDH-T1-E3 |
Description | IGBT Transistors MOSFET 8.0V 0.63A 0.357W | ||
Manufacturer | - | - | Vishay Siliconix |
Product Category | - | - | FETs - Arrays |
Series | - | - | TrenchFETR |
Packaging | - | - | Tape & Reel (TR) |
Package Case | - | - | 6-TSSOP, SC-88, SOT-363 |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | SC-70-6 (SOT-363) |
FET Type | - | - | 2 P-Channel (Dual) |
Power Max | - | - | 357mW |
Drain to Source Voltage Vdss | - | - | 8V |
Input Capacitance Ciss Vds | - | - | 62pF @ 4V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 630mA |
Rds On Max Id Vgs | - | - | 542 mOhm @ 580mA, 4.5V |
Vgs th Max Id | - | - | 1V @ 250μA |
Gate Charge Qg Vgs | - | - | 1.5nC @ 4.5V |