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SP000928260

SP000928260
Mfr. #:
SP000928260
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 650V 6A DPAK-2
Lifecycle:
New from this manufacturer.
Datasheet:
SP000928260 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SP000928260 more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TO-252-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
650 V
Id - Continuous Drain Current:
6 A
Rds On - Drain-Source Resistance:
594 mOhms
Vgs th - Gate-Source Threshold Voltage:
3.5 V
Vgs - Gate-Source Voltage:
20 V
Qg - Gate Charge:
20 nC
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
62.5 W
Configuration:
Single
Channel Mode:
Enhancement
Tradename:
CoolMOS
Packaging:
Reel
Height:
2.3 mm
Length:
6.5 mm
Series:
CoolMOS CFDA
Transistor Type:
1 N-Channel
Width:
6.22 mm
Brand:
Infineon Technologies
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
8 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
40 ns
Typical Turn-On Delay Time:
9 ns
Part # Aliases:
IPD65R660CFDA IPD65R660CFDAATMA1 SP000928260
Unit Weight:
0.139332 oz
Tags
SP00092, SP0009, SP000, SP00, SP0
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Part # Mfg. Description Stock Price
IPD65R660CFDAATMA1
DISTI # IPD65R660CFDAATMA1-ND		Infineon Technologies AGMOSFET N-CH TO252-3
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2500:$0.8925
IPD65R660CFDAATMA1
DISTI # SP000928260		Infineon Technologies AGTrans MOSFET N-CH 650V 6A 3-Pin TO-252 T/R (Alt: SP000928260)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 2500:€0.9999
  • 5000:€0.8339
  • 10000:€0.7689
  • 15000:€0.7139
  • 25000:€0.6669
IPD65R660CFDA
DISTI # 726-IPD65R660CFDA		Infineon Technologies AGMOSFET N-Ch 650V 6A DPAK-2
RoHS: Compliant		0
  • 1:$1.7700
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8720
  • 2500:$0.8120
SP000928260
DISTI # 726-SP000928260		Infineon Technologies AGMOSFET N-Ch 650V 6A DPAK-2
RoHS: Compliant		0
  • 2500:$0.8120
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Availability
Stock:
Available
On Order:
1000
Enter Quantity:
Current price of SP000928260 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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