IXFP20N85X

Mfr. #:: IXFP20N85X
Manufacturer:: IXYS
Description:: 850V/20A ULTRA JUNCTION X-CLASS
Lifecycle:: New from this manufacturer.
Datasheet:: IXFP20N85X Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IXFP20N85X Datasheet IXFP20N85X Datasheet (P4-P6)
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Product Attribute
Attribute Value

Tags: IXFP20, IXFP2, IXFP, IXF

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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IXFP20N85X Description

***enic: 850V 20A 540W 330m´Î@10V10A 5.5V@2.5mA N Channel TO-220-3 MOSFETs ROHS

***ical: Trans MOSFET N-CH 850V 20A 3-Pin(3+Tab) TO-220AB

***ure Electronics: MOSFET 850V Ultra Junction X-Class Pwr MOSFET

***emi: N-Channel Power MOSFET, QFET®, 600V, 23.5A, 240mΩ, TO-3P

*** Source Electronics: MOSFET N-CH 600V 23.5A TO-3P / Trans MOSFET N-CH 600V 23.5A 3-Pin(3+Tab) TO-3P Tube

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***ment14 APAC: MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:23.5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):240mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23.5A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:TO-3P; Power Dissipation Pd:310W; Power Dissipation Pd:310W; Pulse Current Idm:94A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

***p One Stop: Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-220FM Bulk

***ark: Mosfet, N-Ch, 600V, 15A, To-220Fm Rohs Compliant: Yes

***nell: MOSFET, N-CH, 600V, 15A, TO-220FM; Transistor Polarity: N Channel; Continuous Drain Current Id: 15A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Pow

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.20pF 50volts C0G +/-0.1pF

***ineon SCT: Improved creepage distance for open frame power supplies, PG-TO220-3, RoHS

***nell: MOSFET, N-CH, 600V, 19.3A, TO-220FP-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 19.3A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available

***ineon: Improved creepage distance for open frame power supplies | Summary of Features: Increased distance of 4.25mm between pins to meet wide creepage requirements; Package height and width identical with standard TO-220 FullPAK package | Benefits: Wider creepage between pins to avoid arcing even in polluted environment; Compatible with EN 60664-1 standard group III; Cost savings in creepage protection by removing additional efforts spent in alternative solutions today; Fully automated PCB assembly; FullPAK benefit of isolation | Target Applications: Consumer; PC power

***ure Electronics: Single N-Channel 800 V 310 mOhm 91 nC CoolMOS Power Mosfet - TO-220-3FP

***ical: Trans MOSFET N-CH 800V 16.7A 3-Pin(3+Tab) TO-220FP Tube

*** Stop Electro: Power Field-Effect Transistor, 16.7A I(D), 800V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: Mosfet, N-Ch, 800V, 16.7A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:16.7A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.25Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: 800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting

***emi: N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 15 A, 260 mΩ, TO-220F

*** Stop Electro: Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***el Electronic: FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V

***ment14 APAC: MOSFET, N-CH, 600V, 15A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.22ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:36W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***icroelectronics: N-Channel 600V - 0.25Ohm - 20A TO-220FP MDmesh™ POWER MOSFET

*** Source Electronics: Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 20A TO220FP

***r Electronics: Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ark: MOSFET, N CHANNEL, 600V, 20A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:-RoHS Compliant: Yes

Market price

Part #	Mfg.	Description	Stock	Price
IXFP20N85X DISTI # IXFP20N85X-ND	IXYS Corporation	850V/20A ULTRA JUNCTION X-CLASS RoHS: Compliant Min Qty: 1 Container: Tube	84In Stock	2500:$3.1920 500:$3.7848 100:$4.6740 50:$5.1300 10:$5.7000 1:$6.3800
IXFP20N85X DISTI # 747-IXFP20N85X	IXYS Corporation	MOSFET 850V Ultra Junction X-Class Pwr MOSFET RoHS: Compliant	89	1:$7.3300 10:$6.5500 25:$5.7000 50:$5.5900 100:$5.3800 250:$4.5900 500:$4.3500 1000:$3.6700 2500:$3.1500

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Availability

Stock:: Available
On Order:: 4000
Enter Quantity:

Current price of IXFP20N85X is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$4.72~~; ~~$4.72~~

10: ~~$4.49~~; ~~$44.89~~

100: ~~$4.25~~; ~~$425.25~~

500: ~~$4.02~~; ~~$2 008.15~~

1000: ~~$3.78~~; ~~$3 780.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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Step2:Anti-Static Bag

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Step2:
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