IXFP20N85X Datasheet IXFH20N85X, IXFP20N85X | P4-P6

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFP20N85X

IXFH20N85X

Fig. 8. Input Admittance

0

2

4

6

8

10

12

14

16

18

20

4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5

V

GS

- Volts

I

D

- Amperes

T

J

= 125

o

C

25

o

C

- 40

o

C

Fig. 7. Maximum Drain Current vs. Case Temperature

0

4

8

12

16

20

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 9. Transconductance

0

2

4

6

8

10

12

14

16

18

02468101214161820

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40

o

C

125

o

C

25

o

C

Fig. 10. Forward Voltage Drop of Intrinsic Diode

0

5

10

15

20

25

30

35

40

45

50

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

V

SD

- Volts

I

S

- Amperes

T

J

= 125

o

C

T

J

= 25

o

C

Fig. 11. Gate Charge

0

2

4

6

8

10

12

14

16

0 5 10 15 20 25 30 35 40 45 50 55 60 65

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 425V

I

D

= 10A

I

G

= 10mA

Fig. 12. Capacitance

1

10

100

1,000

10,000

1 10 100 1000

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

C

iss

C

rss

C

oss

IXFP20N85X

IXFH20N85X

Fig. 15. Maximum Transient Thermal Impedance

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- K / W

Fig. 14. Forward-Bias Safe Operating Area

0.01

0.1

1

10

100

10 100 1,000

V

DS

- Volts

I

D

- Amperes

25μs

100μs

R

DS(

on

)

Limit

1ms

10ms

DC

T

J

= 150

o

C

T

C

= 25

o

C

Single Pulse

Fig. 13. Output Capacitance Stored Energy

0

5

10

15

20

25

0 100 200 300 400 500 600 700 800 900

V

DS

- Volts

E

OSS

- MicroJoules

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFP20N85X

IXFH20N85X

IXYS REF: F_20N85X(S5-D901) 2-09-16

TO-220 Outline

TO-247 Outline

1 - Gate

2,4 - Drain

3 - Source

1 - Gate

2,4 - Drain

3 - Source

IXFP20N85X

IXFP20N85X

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