RT1E040RPTR

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSST-8

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

4 A

Rds On - Drain-Source Resistance:

32 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

20 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.25 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Series:

RT1E040RP

Transistor Type:

1 P-Channel

Brand:

ROHM Semiconductor

Forward Transconductance - Min:

2.7 S

Fall Time:

45 ns

Product Type:

MOSFET

Rise Time:

30 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

85 ns

Typical Turn-On Delay Time:

15 ns

Part # Aliases:

RT1E040RP

Tags

RT1E04, RT1E, RT1