BSD840N H6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-363-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

880 mA

Rds On - Drain-Source Resistance:

270 mOhms, 270 mOhms

Vgs th - Gate-Source Threshold Voltage:

300 mV

Vgs - Gate-Source Voltage:

8 V

Qg - Gate Charge:

260 pC, 260 pC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Dual

Channel Mode:

Enhancement

Qualification:

AEC-Q101

Packaging:

Reel

Height:

0.9 mm

Length:

2 mm

Series:

BSD840

Transistor Type:

2 N-Channel

Width:

1.25 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

2.5 S, 2.5 S

Fall Time:

900 ps, 900 ps

Product Type:

MOSFET

Rise Time:

2.2 ns, 2.2 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

7.8 ns, 7.8 ns

Typical Turn-On Delay Time:

1.9 ns, 1.9 ns

Part # Aliases:

BSD840NH6327XTSA1 BSD84NH6327XT SP000917654

Unit Weight:

0.000265 oz

Tags

BSD840NH, BSD84, BSD8, BSD