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FCPF400N80ZL1

FCPF400N80ZL1
Mfr. #:
FCPF400N80ZL1
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SF2 800V 400MOHM E TO220F
Lifecycle:
New from this manufacturer.
Datasheet:
FCPF400N80ZL1 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
11 A
Rds On - Drain-Source Resistance:
400 mOhms
Vgs th - Gate-Source Threshold Voltage:
4.5 V
Vgs - Gate-Source Voltage:
20 V, 30 V
Qg - Gate Charge:
43 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
35.7 W
Configuration:
Single
Tradename:
SuperFET II
Packaging:
Tube
Height:
16.07 mm
Length:
10.36 mm
Series:
FCPF400N80ZL1
Transistor Type:
1 N-Channel
Width:
4.9 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
12 S
Fall Time:
2.6 ns
Product Type:
MOSFET
Rise Time:
12 ns
Factory Pack Quantity:
1000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
51 ns
Typical Turn-On Delay Time:
20 ns
Unit Weight:
0.080072 oz
Tags
FCPF40, FCPF4, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 14 A, 400 mΩ, TO-220
***ical
Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Power Field-Effect Transistor, 11A I(D), 800V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
***icroelectronics
N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP package
***ure Electronics
N-Channel 800 V 14 A 0.375 Ohm SuperMESH 5 Power Mosfet - TO-220
***ical
Trans MOSFET N-CH 800V 14A 3-Pin(3+Tab) TO-220FP Tube
***enic
800V 14A 35W 375m´Î@10V7A 5V@100Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***emi
N-Channel Power MOSFET, SUPERFET® II, FRFET®, 650 V, 10.2 A, 380 mΩ, TO-220F
***ical
Trans MOSFET N-CH 650V 10.2A 3-Pin(3+Tab) TO-220F Rail
***r Electronics
Power Field-Effect Transistor, 10.2A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
***icroelectronics
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in TO-220FP package
*** Source Electronics
Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 800V 12A TO-220FP
***ure Electronics
N-Channel 800 V 0.37 Ohm Flange Mount SuperMESH™5 Power Mosfet - TO-220FP
***ark
MOSFET, N-CH, 800V, 12A, TO-220FP; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 12A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 800V, 12A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.37ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 35W; Transistor Case Style: TO-220FP; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (07-Jul-2017)
***va Crawler
N-channel 600 V, 0.45 Ohm typ., 13.5 A SuperMESH Power MOSFET in TO-220FP package
***et
Trans MOSFET N-CH 600V 13.5A 3-Pin(3+Tab) TO-220FP Tube
***ure Electronics
STP14NK60 Series 600 V 13.5 A 0.5 Ohm N-Ch Power MOSFET - TO-220FPAB
***r Electronics
Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N CH, 600V, 13.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 13.5A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***enic
800V 8A 59W 1.55´Î@10V4A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
*** Stop Electro
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***emi
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
***Yang
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Part # Mfg. Description Stock Price
FCPF400N80ZL1
DISTI # V99:2348_06359097		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE126
  • 2000:$1.2610
  • 1000:$1.2660
  • 500:$1.5480
  • 100:$1.7870
  • 10:$2.2439
  • 1:$2.9359
FCPF400N80ZL1
DISTI # V36:1790_06359097		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE0
  • 1000000:$1.1090
  • 500000:$1.1110
  • 100000:$1.2120
  • 10000:$1.3690
  • 1000:$1.3940
FCPF400N80ZL1
DISTI # FCPF400N80ZL1-ND		ON SemiconductorMOSFET N-CH 800V 11A TO220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.3937
FCPF400N80ZL1
DISTI # 26637314		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE37000
  • 1000:$1.3940
FCPF400N80ZL1
DISTI # 32826232		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE1000
  • 1000:$1.2213
FCPF400N80ZL1
DISTI # 29068066		ON SemiconductorSUPERFET2, 400MOHM, 800V, ZENE126
  • 5:$2.9359
FCPF400N80ZL1
DISTI # FCPF400N80ZL1		ON SemiconductorTrans MOSFET N-CH 800V 11A 3-Pin TO-220F Tube (Alt: FCPF400N80ZL1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.0900
  • 50:€1.1900
  • 100:€1.1900
  • 500:€1.1900
  • 25:€1.2900
  • 10:€1.3900
  • 1:€1.5900
FCPF400N80ZL1
DISTI # FCPF400N80ZL1		ON SemiconductorTrans MOSFET N-CH 800V 11A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF400N80ZL1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$1.0900
  • 2000:$1.0900
  • 4000:$1.0900
  • 6000:$1.0900
  • 10000:$1.0900
FCPF400N80ZL1
DISTI # 40Y7278		ON SemiconductorSF2 800V 400MOHM E TO220F / TUBE0
  • 10000:$1.2800
  • 2500:$1.3500
  • 1000:$1.4200
  • 500:$1.6700
  • 100:$1.8500
  • 10:$2.2300
  • 1:$2.7500
FCPF400N80ZL1
DISTI # 512-FCPF400N80ZL1		ON SemiconductorMOSFET SF2 800V 400MOHM E TO220F
RoHS: Compliant		3008
  • 1:$2.6900
  • 10:$2.2800
  • 100:$1.8300
  • 500:$1.6000
  • 1000:$1.3200
  • 2000:$1.2300
  • 5000:$1.1900
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Availability
Stock:
Available
On Order:
1985
Enter Quantity:
Current price of FCPF400N80ZL1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$2.69
$2.69
10
$2.28
$22.80
100
$1.83
$183.00
500
$1.60
$800.00
1000
$1.32
$1 320.00
2000
$1.23
$2 460.00
5000
$1.19
$5 950.00
10000
$1.14
$11 400.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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