OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SIHA11N80E-GE3

SIHA11N80E-GE3
Mfr. #:
SIHA11N80E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
Lifecycle:
New from this manufacturer.
Datasheet:
SIHA11N80E-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHA11N80E-GE3 DatasheetSIHA11N80E-GE3 Datasheet (P4-P6)SIHA11N80E-GE3 Datasheet (P7)
ECAD Model:
More Information:
SIHA11N80E-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-220FP-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
800 V
Id - Continuous Drain Current:
12 A
Rds On - Drain-Source Resistance:
380 mOhms
Vgs th - Gate-Source Threshold Voltage:
4 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
88 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
34 W
Configuration:
Single
Channel Mode:
Enhancement
Series:
E
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
4.5 S
Fall Time:
18 ns
Product Type:
MOSFET
Rise Time:
15 ns
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
55 ns
Typical Turn-On Delay Time:
18 ns
Tags
SIHA1, SIHA, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Japan
Transistor MOSFET N-CH 800V 12A 3-Pin TO-220FP
***ark
Mosfet, N-Ch, 800V, 12A, 150Deg C, 34W Rohs Compliant: Yes
***i-Key
MOSFET N-CH 800V 12A TO220
*** Europe
N-CH SINGLE 800V TO220FP
***S
new, original packaged
***
N-CHANNEL 800V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Part # Mfg. Description Stock Price
SIHA11N80E-GE3
DISTI # V99:2348_21764874		Vishay IntertechnologiesSIHA11N80E-GE3963
  • 2500:$1.6940
  • 1000:$1.7210
  • 500:$2.1140
  • 250:$2.3230
  • 100:$2.3880
  • 10:$2.9430
  • 1:$3.8643
SIHA11N80E-GE3
DISTI # V36:1790_21764874		Vishay IntertechnologiesSIHA11N80E-GE30
  • 1000000:$1.7370
  • 500000:$1.7400
  • 100000:$2.0920
  • 10000:$2.7480
  • 1000:$2.8600
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3-ND		Vishay SiliconixMOSFET N-CHAN 800V TO-220FP
RoHS: Compliant
Min Qty: 1
Container: Tube		954In Stock
  • 5000:$1.7123
  • 3000:$1.7791
  • 1000:$1.8728
  • 100:$2.6085
  • 25:$3.0100
  • 10:$3.1840
  • 1:$3.5400
SIHA11N80E-GE3
DISTI # 27527547		Vishay IntertechnologiesSIHA11N80E-GE3963
  • 2500:$1.6940
  • 1000:$1.7210
  • 500:$2.1140
  • 250:$2.3230
  • 100:$2.3880
  • 10:$2.9430
  • 4:$3.8643
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 12A ID Thin Lead 3-Pin TO-220FP - Tape and Reel (Alt: SIHA11N80E-GE3)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 6000:$1.5900
  • 10000:$1.5900
  • 2000:$1.6900
  • 4000:$1.6900
  • 1000:$1.7900
SIHA11N80E-GE3
DISTI # SIHA11N80E-GE3		Vishay IntertechnologiesE Series Power MOSFET Single N-Channel 800V VDS ±30V 12A ID Thin Lead 3-Pin TO-220FP (Alt: SIHA11N80E-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 500:€1.4900
  • 1000:€1.4900
  • 50:€1.5900
  • 100:€1.5900
  • 25:€1.7900
  • 10:€2.1900
  • 1:€2.7900
SIHA11N80E-GE3
DISTI # 78AC6507		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.38ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes1000
  • 500:$2.1400
  • 100:$2.4600
  • 50:$2.6400
  • 25:$2.8100
  • 10:$2.9900
  • 1:$3.6100
SIHA11N80E-GE3
DISTI # 78-SIHA11N80E-GE3		Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs TO-220 FULLPAK
RoHS: Compliant		884
  • 1:$3.5700
  • 10:$2.9600
  • 100:$2.4400
  • 250:$2.3600
  • 500:$2.1200
SIHA11N80E-GE3
DISTI # 2932902		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W1000
  • 500:£1.5400
  • 250:£1.7100
  • 100:£1.7700
  • 10:£2.1400
  • 1:£2.9200
SIHA11N80E-GE3
DISTI # 2932902		Vishay IntertechnologiesMOSFET, N-CH, 800V, 12A, 150DEG C, 34W
RoHS: Compliant		1000
  • 1000:$2.9300
  • 500:$3.0900
  • 250:$3.2800
  • 100:$3.5700
  • 10:$4.1200
  • 1:$4.7300
Image Part # Description
OPA2192IDR

Mfr.#: OPA2192IDR

OMO.#: OMO-OPA2192IDR

 Precision Amplifiers 36V Precision Current Op Amp
NUCLEO-F429ZI

Mfr.#: NUCLEO-F429ZI

OMO.#: OMO-NUCLEO-F429ZI

 Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F429ZI MCU, supports Arduino, ST Zio and morpho connectivity
RAC10-15SK/277

Mfr.#: RAC10-15SK/277

OMO.#: OMO-RAC10-15SK-277-RECOM-POWER

 CONV AC/DC 10W 85-305VIN 15VOUT
RAC10-24SK/277

Mfr.#: RAC10-24SK/277

OMO.#: OMO-RAC10-24SK-277-RECOM-POWER

 CONV AC/DC 10W 85-305VIN 24VOUT
OPA2192IDR

Mfr.#: OPA2192IDR

OMO.#: OMO-OPA2192IDR-TEXAS-INSTRUMENTS

 Precision Amplifiers High Voltage, Rail-to-Rail Input/Output,Precision Op Amps, E-Trim(TM) Series 8-SOIC -40 to 125
NUCLEO-F429ZI

Mfr.#: NUCLEO-F429ZI

OMO.#: OMO-NUCLEO-F429ZI-STMICROELECTRONICS

 NUCLEO DEV BOARD STM32F429ZI
RR03J68KTB

Mfr.#: RR03J68KTB

OMO.#: OMO-RR03J68KTB-TE-CONNECTIVITY-AMP

 Metal Film Resistors - Through Hole RR03 5% 68K AMMO
CRCW0805470RFKEAC

Mfr.#: CRCW0805470RFKEAC

OMO.#: OMO-CRCW0805470RFKEAC-VISHAY-DALE

 D12/CRCW0805-C 100 470R 1% ET1
TPSM84203EAB

Mfr.#: TPSM84203EAB

OMO.#: OMO-TPSM84203EAB-TEXAS-INSTRUMENTS

 DC DC CONVERTER 3.3V
FRDM-KE16Z

Mfr.#: FRDM-KE16Z

OMO.#: OMO-FRDM-KE16Z-NXP-SEMICONDUCTORS

 FREEDOM KE1XZ EVAL BRD
Availability
Stock:
884
On Order:
2867
Enter Quantity:
Current price of SIHA11N80E-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$3.57
$3.57
10
$2.96
$29.60
100
$2.44
$244.00
250
$2.36
$590.00
500
$2.12
$1 060.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Start with
Newest Products
More Newest Products
Top