SI2307BDS-T1-E3

SI2307BDS-T1-E3
Mfr. #:
SI2307BDS-T1-E3
Manufacturer:
Vishay
Description:
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
Lifecycle:
New from this manufacturer.
Datasheet:
SI2307BDS-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SI2307BDS-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer
Vishay Siliconix
Product Category
IC Chips
Series
TrenchFETR
Packaging
Digi-ReelR Alternate Packaging
Part-Aliases
SI2307BDS-E3
Unit-Weight
0.050717 oz
Mounting-Style
SMD/SMT
Tradename
TrenchFET
Package-Case
TO-236-3, SC-59, SOT-23-3
Technology
Si
Operating-Temperature
-55°C ~ 150°C (TJ)
Mounting-Type
Surface Mount
Number-of-Channels
1 Channel
Supplier-Device-Package
SOT-23-3 (TO-236)
Configuration
Single
FET-Type
MOSFET P-Channel, Metal Oxide
Power-Max
750mW
Transistor-Type
1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
Input-Capacitance-Ciss-Vds
380pF @ 15V
FET-Feature
Standard
Current-Continuous-Drain-Id-25°C
2.5A (Ta)
Rds-On-Max-Id-Vgs
78 mOhm @ 3.2A, 10V
Vgs-th-Max-Id
3V @ 250μA
Gate-Charge-Qg-Vgs
15nC @ 10V
Pd-Power-Dissipation
750 mW
Maximum-Operating-Temperature
+ 150 C
Minimum-Operating-Temperature
- 55 C
Fall-Time
12 ns
Rise-Time
12 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuous-Drain-Current
2.5 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Rds-On-Drain-Source-Resistance
78 mOhms
Transistor-Polarity
P-Channel
Typical-Turn-Off-Delay-Time
25 ns
Typical-Turn-On-Delay-Time
9 ns
Forward-Transconductance-Min
5 S
Channel-Mode
Enhancement
Tags
SI2307BDS-T, SI2307B, SI2307, SI230, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ohm; ID -2.5A; TO-236 (SOT-23); PD 0.75W
***ure Electronics
Single P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
***ical
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
***C
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23
***eco
P-CH MOSFET SOT-23 30V 78MOHM @ 10V<AZ
***et Europe
Trans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 30V 2.5A SOT23-3
***Components
MOSFET P-Channel 30V 2.5A TO236
***
30V, 78MOHM @ 10V, SOT-23
***ser
P-Channel MOSFETs 30V 3.2A 1.25W
***ark
P Channel Mosfet, -30V, 2.5A To-236, Full Reel; Transistor Polarity:p Channel; Continuous Drain Current Id:-2.5A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.063Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3Vrohs Compliant: No
***ment14 APAC
P CH MOSFET; Transistor Polarity:P Chann; P CH MOSFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.25W
***nell
MOSFET, CANALE P, -30V, -2.5A, SOT-23-3; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-2.5A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.063ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-3V; Dissipazione di Potenza Pd:750mW; Modello Case Transistor:SOT-23; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jun-2015); Temperatura di Esercizio Min:-55°C
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Part # Mfg. Description Stock Price
SI2307BDS-T1-E3
DISTI # V72:2272_07432050
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant
2185
  • 1000:$0.2152
  • 500:$0.2668
  • 250:$0.3416
  • 100:$0.3425
  • 25:$0.4258
  • 10:$0.4276
  • 1:$0.4860
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3CT-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
24407In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
24407In Stock
  • 1000:$0.2119
  • 500:$0.2742
  • 100:$0.3739
  • 10:$0.4990
  • 1:$0.5900
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3TR-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
24000In Stock
  • 3000:$0.1875
SI2307BDS-T1-E3
DISTI # 29567482
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant
2185
  • 1000:$0.2152
  • 500:$0.2668
  • 250:$0.3416
  • 100:$0.3425
  • 28:$0.4258
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2307BDS-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$0.1949
  • 6000:$0.1889
  • 12000:$0.1809
  • 18000:$0.1759
  • 30000:$0.1719
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 3000:€0.3179
  • 6000:€0.2169
  • 12000:€0.1869
  • 18000:€0.1719
  • 30000:€0.1599
SI2307BDS-T1-E3
DISTI # SI2307BDS-T1-E3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Asia - 0
    SI2307BDS-T1-E3
    DISTI # 02J5180
    Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: 02J5180)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel
    Americas - 0
    • 1:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3
    DISTI # 64R4907
    Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 64R4907)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Ammo Pack
    Americas - 0
    • 1:$0.9120
    • 25:$0.7280
    • 50:$0.6410
    • 100:$0.5520
    • 250:$0.5040
    • 500:$0.4560
    • 1000:$0.3650
    SI2307BDS-T1-E3
    DISTI # 64R4907
    Vishay IntertechnologiesP CHANNEL MOSFET,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:750mW , RoHS Compliant: Yes3436
    • 1:$0.9120
    • 25:$0.7280
    • 50:$0.6410
    • 100:$0.5520
    • 250:$0.5040
    • 500:$0.4560
    • 1000:$0.3650
    SI2307BDS-T1-E3
    DISTI # 02J5180
    Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 2.5A TO-236, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-2.5A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.063ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V, RoHS Compliant: Yes6000
    • 1:$0.3310
    • 3000:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3.
    DISTI # 30AC0138
    Vishay IntertechnologiesFOR NEW DESIGNS USE SI2307CDS-T1-GE3 , ROHS COMPLIANT: NO0
    • 1:$0.3380
    • 3000:$0.3200
    • 6000:$0.3080
    • 12000:$0.2980
    SI2307BDS-T1-E3
    DISTI # 70026066
    Vishay SiliconixMOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.063Ohm,ID -2.5A,TO-236 (SOT-23),PD 0.75W
    RoHS: Compliant
    0
    • 3000:$0.3400
    • 6000:$0.3000
    • 9000:$0.2700
    SI2307BDS-T1-E3
    DISTI # 781-SI2307BDS-E3
    Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W
    RoHS: Compliant
    16579
    • 1:$0.7600
    • 10:$0.6070
    • 100:$0.4600
    • 500:$0.3800
    • 1000:$0.3040
    • 3000:$0.2760
    • 6000:$0.2570
    • 9000:$0.2480
    SI2307BDS-T1-E3Vishay IntertechnologiesSingle P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
    RoHS: Compliant
    21000Reel
    • 3000:$0.2700
    SI2307BDS-T1-E3Vishay IntertechnologiesSingle P-Channel 30 V 0.078 Ohms Surface Mount Power Mosfet - SOT-23
    RoHS: Compliant
    2945Cut Tape/Mini-Reel
    • 1:$0.3750
    • 250:$0.3200
    • 500:$0.3150
    • 750:$0.3100
    • 1500:$0.3000
    SI2307BDS-T1-E3Vishay BLH 2730
    • 12:$0.4500
    • 46:$0.2925
    • 172:$0.1688
    • 594:$0.1440
    • 1286:$0.1260
    SI2307BDS-T1-E3Vishay Intertechnologies 1625
      SI2307BDS-T1-E3Vishay Siliconix 165
      • 12:$0.4500
      • 46:$0.2925
      SI2307BDS-T1-E3Vishay Intertechnologies2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB2184
      • 1112:$0.1560
      • 201:$0.1800
      • 1:$0.6000
      SI2307BDS-T1-E3Vishay Semiconductors2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB132
      • 43:$0.3000
      • 9:$0.4800
      • 1:$0.6000
      SI2307BDS-T1-E3
      DISTI # XSFP00000063433
      Vishay Siliconix 
      RoHS: Compliant
      40343
      • 3000:$0.7500
      • 40343:$0.6818
      SI2307BDS-T1-E3
      DISTI # 1571143
      Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 2.5A TO-236, FUL
      RoHS: Compliant
      6000
      • 3000:$1.0500
      SI2307BDS-T1-E3
      DISTI # 2396090
      Vishay IntertechnologiesMOSFET, P-CH, -30V, -2.5A, SOT-23-3
      RoHS: Compliant
      3781
      • 1:$0.9350
      • 10:$0.7900
      • 100:$0.5920
      • 500:$0.4340
      • 1000:$0.4030
      SI2307BDS-T1-E3
      DISTI # C1S803600844070
      Vishay IntertechnologiesMOSFETs
      RoHS: Compliant
      2185
      • 250:$0.3407
      • 100:$0.3416
      • 25:$0.4240
      • 10:$0.4258
      SI2307BDS-T1-E3
      DISTI # 2396090
      Vishay IntertechnologiesMOSFET, P-CH, -30V, -2.5A, SOT-23-3
      RoHS: Compliant
      3714
      • 5:£0.4560
      • 25:£0.4240
      • 100:£0.3030
      • 250:£0.2630
      • 500:£0.2220
      SI2307BDS-T1-E3Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W
      RoHS: Compliant
      Americas -
        Image Part # Description
        SI2307BDS-T1-E3

        Mfr.#: SI2307BDS-T1-E3

        OMO.#: OMO-SI2307BDS-T1-E3

        MOSFET 30V 3.2A 1.25W
        SI2307BDS

        Mfr.#: SI2307BDS

        OMO.#: OMO-SI2307BDS-1190

        2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
        SI2307BDS-T1-GE3

        Mfr.#: SI2307BDS-T1-GE3

        OMO.#: OMO-SI2307BDS-T1-GE3-VISHAY

        MOSFET P-CH 30V 2.5A SOT23-3
        SI2307BDS-T1-E3-CUT TAPE

        Mfr.#: SI2307BDS-T1-E3-CUT TAPE

        OMO.#: OMO-SI2307BDS-T1-E3-CUT-TAPE-1190

        New and Original
        SI2307BDS-T1-E3

        Mfr.#: SI2307BDS-T1-E3

        OMO.#: OMO-SI2307BDS-T1-E3-VISHAY

        Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
        Availability
        Stock:
        Available
        On Order:
        3500
        Enter Quantity:
        Current price of SI2307BDS-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $0.11
        $0.11
        10
        $0.11
        $1.05
        100
        $0.10
        $9.96
        500
        $0.09
        $47.05
        1000
        $0.09
        $88.60
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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