SI2307BDS-T1-GE3

SI2307BDS-T1-GE3
Mfr. #:
SI2307BDS-T1-GE3
Manufacturer:
Vishay
Description:
MOSFET P-CH 30V 2.5A SOT23-3
Lifecycle:
New from this manufacturer.
Datasheet:
SI2307BDS-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI2307BDS-T1-GE3 DatasheetSI2307BDS-T1-GE3 Datasheet (P4-P6)SI2307BDS-T1-GE3 Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Tags
SI2307BDS-T, SI2307B, SI2307, SI230, SI23, SI2
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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2307BDS Series 30 V 2.5 A Surface Mount P-Channel Mosfet - SOT-23-3 (TO-236)
***ical
Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
***ment14 APAC
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):78mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:750mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2.5A; Junction Temperature Tj Max:150°C; Package / Case:SOT-23; Power Dissipation Pd:750mW; Power Dissipation Pd:750mW; Rise Time:12ns; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V; Voltage Vgs th Min:1V
Part # Mfg. Description Stock Price
SI2307BDS-T1-GE3
DISTI # 31975006
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant
3000
  • 3000:$0.1969
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7753In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7753In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 2.5A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SI2307BDS-T1-GE3
DISTI # V36:1790_09216788
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
RoHS: Compliant
0
  • 3000000:$0.2045
  • 1500000:$0.2047
  • 300000:$0.2133
  • 30000:$0.2263
  • 3000:$0.2284
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R (Alt: SI2307BDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.1559
  • 18000:€0.1669
  • 12000:€0.1809
  • 6000:€0.2109
  • 3000:€0.3089
SI2307BDS-T1-GE3
DISTI # SI2307BDS-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 2.5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2307BDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.1919
  • 18000:$0.1969
  • 12000:$0.2029
  • 6000:$0.2109
  • 3000:$0.2179
SI2307BDS-T1-GE3
DISTI # 781-SI2307BDS-GE3
Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W 78mohm @ 10V
RoHS: Compliant
7294
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
SI2307BDS-T1-GE3Vishay IntertechnologiesMOSFET 30V 3.2A 1.25W 78mohm @ 10V
RoHS: Compliant
Americas -
    Image Part # Description
    SI2307BDS-T1-E3

    Mfr.#: SI2307BDS-T1-E3

    OMO.#: OMO-SI2307BDS-T1-E3

    MOSFET 30V 3.2A 1.25W
    SI2307BDS

    Mfr.#: SI2307BDS

    OMO.#: OMO-SI2307BDS-1190

    2500 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
    SI2307BDS-T1-GE3

    Mfr.#: SI2307BDS-T1-GE3

    OMO.#: OMO-SI2307BDS-T1-GE3-VISHAY

    MOSFET P-CH 30V 2.5A SOT23-3
    SI2307BDS-T1-E3-CUT TAPE

    Mfr.#: SI2307BDS-T1-E3-CUT TAPE

    OMO.#: OMO-SI2307BDS-T1-E3-CUT-TAPE-1190

    New and Original
    SI2307BDS-T1-E3

    Mfr.#: SI2307BDS-T1-E3

    OMO.#: OMO-SI2307BDS-T1-E3-VISHAY

    Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R
    Availability
    Stock:
    Available
    On Order:
    1500
    Enter Quantity:
    Current price of SI2307BDS-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $0.27
    $0.27
    10
    $0.25
    $2.52
    100
    $0.24
    $23.92
    500
    $0.23
    $112.95
    1000
    $0.21
    $212.60
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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