DMN65D8LDW-7

Mfr. #:: DMN65D8LDW-7
Manufacturer:: Diodes Incorporated
Description:: MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA
Lifecycle:: New from this manufacturer.
Datasheet:: DMN65D8LDW-7 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:: DMN65D8LDW-7 more Information

Product Attribute
Attribute Value

Manufacturer:: Diodes Incorporated

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: SOT-363-6

Number of Channels:: 2 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 60 V

Id - Continuous Drain Current:: 200 mA

Rds On - Drain-Source Resistance:: 6 Ohms

Vgs th - Gate-Source Threshold Voltage:: 1 V

Vgs - Gate-Source Voltage:: 10 V

Qg - Gate Charge:: 870 pC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 400 mW

Configuration:: Dual

Channel Mode:: Enhancement

Packaging:: Reel

Series:: DMN63

Transistor Type:: 2 N-Channel

Brand:: Diodes Incorporated

Forward Transconductance - Min:: 80 mS

Fall Time:: 6.3 ns

Product Type:: MOSFET

Rise Time:: 3.2 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 12 ns

Typical Turn-On Delay Time:: 3.3 ns

Unit Weight:: 0.000212 oz

Tags: DMN65D8LDW-7, DMN65D8LD, DMN65D8, DMN65, DMN6, DMN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

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DMN65D8LDW-7 Description

***et Japan: Transistor MOSFET Array Dual N-CH 60V 200mA 6-Pin SOT-363 T/R

*** Source Electronics: MOSFET 2N-CH 60V 0.18A SOT363 / Trans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R

***ure Electronics: Dual N-Channel 60 V 6 Ohm Surface Mount Enhancement Mode Mosfet - SOT363

***nell: MOSFET, DUAL N-CH, 60V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 180mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***essParts.Net: DIODES INC 2N7002DW-7-F / MOSFET N-CHAN DUAL 60V SOT363 ROHS Date Code 0810

***et Europe: Transistor MOSFET Array Dual N-CH 60V 0.23A 6-Pin SOT-363 T/R

***ure Electronics: 2N7002DW Series 60 V 7.5 Ohm Dual N-Channel Enhancement Mode Transistor SOT-363

***ark: MOSFET, N CHANNEL, DUAL, 60 V, 800mA, SOT-363; Channel Type:N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:115mA; Continuous Drain Current Id P Channel:-RoHS Compliant: Yes

***nell: MOSFET, N CH, 60V, 0.115A, SOT-363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 13.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power Dissipation Pd: 200mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 115mA; Current Id Max: 800mA; Drain Source Voltage Vds, N Channel: 60V; Module Configuration: Dual; On Resistance Rds(on), N Channel: 3.2ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 60V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Dual N-Channel 30 V 2.8 O 0.3 W SMT Enhancement Mode MosFet - SOT-363

***et Europe: Transistor MOSFET Array Dual N-CH 30V 260mA 6-Pin SOT-363 T/R

*** Source Electronics: Trans MOSFET N-CH 30V 0.26A 6-Pin SOT-363 T/R / MOSFET 2N-CH 30V 0.22A SOT363

***ment14 APAC: MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:260mA; Source Voltage Vds:30V; On

***nell: MOSFET, AEC-Q101, DUAL N-CH, 30V, SOT363; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 260mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 2.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***et Japan: Transistor MOSFET Array Dual P-CH 50V 130mA 6-Pin SOT-363 T/R

***ure Electronics: BSS84DW Series 50 V 10 Ohm Dual P-Channel Enhancement Mode Transistor SOT-363

***ment14 APAC: MOSFET P-CHANNEL SOT-363; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-130mA; Source Voltage Vds:-50V; On Resistance

***nell: MOSFET P-CHANNEL SOT-363; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: -130mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -1.6V; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, P Channel: -130mA; Current Id Max: -130mA; Drain Source Voltage Vds, P Channel: -50V; Module Configuration: Dual; On Resistance Rds(on), P Channel: 6ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -50V; Voltage Vgs Rds on Measurement: -5V

***ical: Trans MOSFET P-CH 30V 1.5A Automotive 6-Pin SOT-363 T/R

***ark: Mosfet, P-Ch, Aec-Q101, 30V, -1.5A; Transistor Polarity:p Channel; Continuous Drain Current Id:-1.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.107Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power Rohs Compliant: Yes

***ineon: Infineons highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Small Signal packages approved to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Notebook; Onboard charger

***ical: Trans MOSFET N-CH 30V 1.4A Automotive 6-Pin SOT-363 T/R

***ment14 APAC: MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity:N Channel; Continuous Drain Current Id:1.4A; Source Voltage Vds:30V; On Resistance

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***nell: MOSFET, N-CH, AUTO, 30V, 1.4A, SOT363; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 500mW; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: OptiMOS 2 Series; Automotive Qualification Standard: AEC-Q101; MSL: -; SVHC: No SVHC (27-Jun-2018)

***emi: Small Signal MOSFET 30V 3.2A 60 mOhm Single N-Channel SC−88/SC70−6/SOT−363

***ser: MOSFETs- Power and Small Signal NFET 30V 3.2A 60MOHM

***Yang: Trans MOSFET N-CH 30V 2.6A 6-Pin SC-88 T/R - Tape and Reel

***ponent Stockers USA: 1800 mA 30 V N-CHANNEL Si SMALL SIGNAL MOSFET

***r Electronics: Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 30V 1.8A SC88/SC70-6

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.6A; On Resistance, Rds(on):45mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-SC-88 ;RoHS Compliant: Yes

DMN65D8LDW-7 More Information

Diodes Inc. DMNxx MOSFETs: Diodes Inc. DMNxx MOSFETs are N-channel devices ideally suited for meeting the requirements of a variety of power management applications. DMNxx MOSFETs offer a variety of package options and a wide range of drain-source voltage values.

Market price

Part #	Mfg.	Description	Stock	Price
DMN65D8LDW-7 DISTI # V72:2272_06697538	Zetex / Diodes Inc	Trans MOSFET N-CH 60V 0.2A Automotive 6-Pin SOT-363 T/R RoHS: Compliant	3000	3000:$0.0506
DMN65D8LDW-7 DISTI # DMN65D8LDW-7DITR-ND	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.0751
DMN65D8LDW-7 DISTI # DMN65D8LDW-7DICT-ND	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.0880 500:$0.1128 100:$0.1944 10:$0.3250 1:$0.4500
DMN65D8LDW-7 DISTI # DMN65D8LDW-7DIDKR-ND	Diodes Incorporated	MOSFET 2N-CH 60V 0.18A SOT363 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.0880 500:$0.1128 100:$0.1944 10:$0.3250 1:$0.4500
DMN65D8LDW-7 DISTI # DMN65D8LDW-7	Diodes Incorporated	Trans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R (Alt: DMN65D8LDW-7) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 15000	3000:$0.0827 6000:$0.0790 9000:$0.0757 15000:$0.0736 30000:$0.0726 75000:$0.0707 150000:$0.0689
DMN65D8LDW-7 DISTI # DMN65D8LDW-7	Diodes Incorporated	Trans MOSFET N-CH 60V 0.2A 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN65D8LDW-7) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.0388 6000:$0.0369 12000:$0.0352 18000:$0.0336 30000:$0.0329
DMN65D8LDW-7 DISTI # 82Y6583	Diodes Incorporated	MOSFET, DUAL N-CH, 60V, SOT363,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:180mA,Drain Source Voltage Vds:60V,On Resistance Rds(on):6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power , RoHS Compliant: Yes	1534	1:$0.3630 10:$0.2370 25:$0.1940 50:$0.1500 100:$0.1060 250:$0.0990 500:$0.0910 1000:$0.0840
DMN65D8LDW-7 DISTI # 70551253	Diodes Incorporated	Dual N-Ch Enhancement MOSFET SOT-363 RoHS: Compliant	0	500:$0.0910 1000:$0.0670 1500:$0.0580 3000:$0.0530
DMN65D8LDW-7 DISTI # 522-DMN65D8LDW-7	Diodes Incorporated	MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA RoHS: Compliant	0	1:$0.3500 10:$0.2260 100:$0.0970 1000:$0.0750 3000:$0.0570 9000:$0.0510
DMN65D8LDW-7 DISTI # 8222602P	Zetex / Diodes Inc	DUAL N-CH ENHANCEMENT MOSFET SOT-363, RL	2400	500:£0.0670 1000:£0.0540 1500:£0.0470 3000:£0.0430
DMN65D8LDW-7	Diodes Incorporated	INSTOCK	32630
DMN65D8LDW-7 DISTI # 2543547	Diodes Incorporated	MOSFET, DUAL N-CH, 60V, SOT363 RoHS: Compliant	1534	1:$0.5540 10:$0.3590 100:$0.1540 1000:$0.1190 3000:$0.0910 9000:$0.0810
DMN65D8LDW-7 DISTI # 2543547	Diodes Incorporated	MOSFET, DUAL N-CH, 60V, SOT363 RoHS: Compliant	1534	5:£0.2280 25:£0.2210 100:£0.0887 250:£0.0852 500:£0.0782

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DMN65D8LDW-7

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes