PartNumber | DMN65D8L-7 | DMN65D8LDW-7 | DMN65D8LDWQ-13 |
Description | MOSFET N-Ch Enh Mode FET 60V 3ohm 310mA | MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-3 | SOT-363-6 | SOT-363-6 |
Number of Channels | 1 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 310 mA | 200 mA | - |
Rds On Drain Source Resistance | 3 Ohms | 6 Ohms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 1 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 0.87 nC | 870 pC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 540 mW | 400 mW | - |
Configuration | Single | Dual | Dual |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Series | DMN63 | DMN63 | DMN65D |
Transistor Type | 1 N-Channel | 2 N-Channel | 2 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 80 mS | 80 mS | - |
Fall Time | 7.3 ns | 6.3 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 2.8 ns | 3.2 ns | - |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 12.6 ns | 12 ns | - |
Typical Turn On Delay Time | 2.7 ns | 3.3 ns | - |
Unit Weight | 0.000282 oz | 0.000212 oz | 0.000265 oz |
Qualification | - | - | AEC-Q101 |