 |  | | |
| PartNumber | DMN65D8LDW-7 | DMN65D8LDW | DMN65D8LDW-7-CUT TAPE |
| Description | MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 200 mA | - | - |
| Rds On Drain Source Resistance | 6 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 870 pC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 400 mW | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMN63 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 80 mS | - | - |
| Fall Time | 6.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.2 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 12 ns | - | - |
| Typical Turn On Delay Time | 3.3 ns | - | - |
| Unit Weight | 0.000212 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN65D8LDW-7 | MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA | |
| DMN65D8LDWQ-7 | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd | ||
| DMN65D8LDWQ-13 | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd | ||
| DMN65D8LDW | New and Original | ||
| DMN65D8LDW-7-F | New and Original | ||
| DMN65D8LDWQ | New and Original | ||
| DMN65D8LDWQ-7 | MOSFET 2N-CH 60V 180MA SOT363 | ||
| DMN65D8LDW-7-CUT TAPE | New and Original | ||
| DMN65D8LDW-7 | Darlington Transistors MOSFET Dual N-Ch 60V 8ohm 5V VGS 170mA |