2N5686G

Mfr. #:: 2N5686G
Manufacturer:: ON Semiconductor
Description:: Bipolar Transistors - BJT 50A 80V 300W NPN
Lifecycle:: New from this manufacturer.
Datasheet:: 2N5686G Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: 2N5686G Datasheet 2N5686G Datasheet (P4-P5)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: ON Semiconductor

Product Category:: Bipolar Transistors - BJT

RoHS:: Y

Mounting Style:: Through Hole

Package / Case:: TO-204-2

Transistor Polarity:: NPN

Configuration:: Single

Collector- Emitter Voltage VCEO Max:: 80 V

Collector- Base Voltage VCBO:: 80 V

Emitter- Base Voltage VEBO:: 5 V

Collector-Emitter Saturation Voltage:: 1 V

Maximum DC Collector Current:: 50 A

Gain Bandwidth Product fT:: 2 MHz

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 150 C

Series:: 2N5686

Height:: 8.51 mm

Length:: 38.86 mm

Packaging:: Tray

Width:: 26.67 mm

Brand:: ON Semiconductor

Continuous Collector Current:: 50 A

DC Collector/Base Gain hfe Min:: 15

Pd - Power Dissipation:: 300 W

Product Type:: BJTs - Bipolar Transistors

Factory Pack Quantity:: 100

Subcategory:: Transistors

Unit Weight:: 0.488015 oz

Tags: 2N568, 2N56, 2N5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2N5686G Description

***roFlash: Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 50A, PD 300mW, hFE 5

***emi: 50 A, 80 V NPN Bipolar Power Transistor

***ical: Trans GP BJT NPN 80V 50A 300000mW 3-Pin(2+Tab) TO-204 Tray

***r Electronics: Power Bipolar Transistor, 50A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AE, Metal, 2 Pin

***ure Electronics: 2N Series 80 V 50 A High-Current Complementary Silicon Power Transistor - TO-204

***el Electronic: ON SEMICONDUCTOR - 2N5686G - Transistor Bipolar (BJT) Individual, Propósito General, NPN, 80 V, 2 MHz, 300 mW, 50 A, 2 hFE

***nell: TRANS, BIPOL, NPN, 80V, TO-204AA; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 300W; DC Collector Current: 50A; DC Current Gain hFE: 15hFE; Transistor

***roFlash: Transistor, Bipolar, Si, NPN, High Current, Power, VCEO 80VDC, IC 60A, PD 300W, hFE 5

***emi: 60 A, 80 V NPN Bipolar Power Transistor

***ical: Trans GP BJT NPN 80V 60A 300000mW 3-Pin(2+Tab) TO-204 Tray

***S.I.T. Europe - USA - Asia: Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***enic: 80V 300W 60A NPN TO-3 Bipolar Transistors - BJT ROHS

***ark: BIPOLAR TRANSISTOR, NPN, 80V, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:80V; Continuous Collector Current:60A; Power Dissipation:300W; Transistor Mounting:Through Hole; No. of Pins:2Pins; Transition Frequency:- RoHS Compliant: Yes

***nell: TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 300W; DC Collector Current: 1mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 2.5V; Current Gain Hfe Max: 100; Current Ib: 1A; Current Ic Continuous a Max: 60A; Current Ic NPN Device: 1A; DC Current Gain Hfe Min: 15; DC Current Gain Max (hfe): 100; Junction Temperature Tj Max: +200°C; Junction Temperature Tj Min: -65°C; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Termination Type: Through Hole; Voltage Vcbo: 80V

***ical: Trans GP BJT NPN 60V 30A 200000mW 3-Pin(2+Tab) TO-3 Tray

***r Electronics: Power Bipolar Transistor, 30A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***ure Electronics: 2N Series 60 V 30 A Screw Mount High-Power NPN Silicon Transistor - TO-204AA

***emi: High Power NPN Bipolar Power Transistor

***ark: Bipolar Transistor, Npn, 60V To-204; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:60V; Dc Collector Current:30A; Power Dissipation Pd:200W; Transistor Mounting:through Hole; No. Of Pins:2Pins; Dc Current Gain Hfe:5Hfe Rohs Compliant: Yes

***(Formerly Allied Electronics): Transistor, Bipolar,Si,NPN,High Power,VCEO 80VDC,IC 25A,PD 200W,TO-204AA (TO-3)

***emi: 25 A, 80 V NPN Bipolar Power Transistor

***ical: Trans GP BJT NPN 80V 25A 200000mW 3-Pin(2+Tab) TO-3 Tray

***r Electronics: Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin

***ure Electronics: 2N Series 80 V 25 A NPN Complementary Silicon High-Power Transistor - TO-204AA

***ment14 APAC: Transistor, NPN, TO-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:4MHz; Power Dissipation Pd:200W; DC

***nell: TRANSISTOR, NPN, TO-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 200W; DC Collector Current: 25A; DC Current Gain hFE: 4hFE; Transistor Case Style: TO-204AA; No. of Pins: 2Pins; Operating Temperature Max: 200°C; Product Range: 2NXXXX Series; Automotive Qualification Standard: -; MSL: -; SVHC: Lead (27-Jun-2018); Av Current Ic: 25A; Collector Emitter Saturation Voltage Vce(on): 1V; Continuous Collector Current Ic Max: 25A; Current Ic Continuous a Max: 25A; Current Ic hFE: 10A; Device Marking: 2N5886G; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 4MHz; Gain Bandwidth ft Typ: 4MHz; Hfe Min: 20; No. of Transistors: 1; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +200°C; Power Dissipation Ptot Max: 200W; Voltage Vcbo: 80V

Market price

Part #	Mfg.	Description	Stock	Price
2N5686G DISTI # V99:2348_07290247	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	100	1000:$7.2220 500:$8.0230 200:$9.1660 100:$9.5820
2N5686G DISTI # V36:1790_07290247	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	85	1000:$7.2220 500:$8.0230 200:$9.1660 100:$9.5820
2N5686G DISTI # 2N5686GOS-ND	ON Semiconductor	TRANS NPN 80V 50A TO3 RoHS: Compliant Min Qty: 1 Container: Tray	304In Stock	500:$9.5369 100:$10.7208 10:$12.6940 1:$13.8100
2N5686G DISTI # 31062962	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	100	1:$9.5820
2N5686G DISTI # 30223364	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray RoHS: Compliant	85	85:$9.5820
2N5686G DISTI # 2N5686G	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Trays (Alt: 2N5686G) RoHS: Compliant Min Qty: 100 Container: Tray	Americas - 85	100:$8.0900 200:$8.0900 400:$7.9900 600:$7.8900 1000:$7.6900
2N5686G DISTI # 2N5686G	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray (Alt: 2N5686G) RoHS: Compliant Min Qty: 1 Container: Tray	Europe - 0	1:€10.7755 10:€9.9130 100:€8.3720
2N5686G DISTI # 26K5299	ON Semiconductor	Trans GP BJT NPN 80V 50A 3-Pin(2+Tab) TO-204 Tray - Bulk (Alt: 26K5299) RoHS: Compliant Min Qty: 1 Container: Bulk	Americas - 0	1:$13.1500 10:$12.1000 25:$11.5900 50:$10.9100 100:$10.2200 250:$9.7100 500:$9.0900
2N5686G DISTI # 26K5299	ON Semiconductor	BIPOLAR TRANSISTOR, NPN, 80V,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:80V,Transition Frequency ft:2MHz,Power Dissipation Pd:300mW,DC Collector Current:50A,DC Current Gain hFE:2hFE,No. of Pins:2Pins,MSL:- , RoHS Compliant: Yes	172	1:$11.1800 10:$10.2900 25:$9.8600 50:$9.2800 100:$8.6900 250:$8.2600 500:$7.7300
2N5686G. DISTI # 30AC3786	ON Semiconductor	BIP T03 NPN 50A 80V , ROHS COMPLIANT: YES	85	1:$13.4100 10:$12.3400 25:$11.8200 50:$10.9100 100:$10.2200 250:$9.7100 500:$9.0900
2N5686G DISTI # 70099763	ON Semiconductor	Transistor,Bipolar,Si,NPN,High Current,Power,VCEO 80VDC,IC 50A,PD 300mW,hFE 5 RoHS: Compliant	0	1:$13.0900 100:$12.4400 250:$11.8100
2N5686G	ON Semiconductor	RoHS: Not Compliant	3067	1000:$10.2400 500:$10.7700 100:$11.2200 25:$11.7000 1:$12.6000
2N5686G DISTI # 863-2N5686G	ON Semiconductor	Bipolar Transistors - BJT 50A 80V 300W NPN RoHS: Compliant	187	1:$13.1500 10:$12.1000 20:$11.5900 100:$10.2200 200:$9.7100 500:$9.0900
2N5686 DISTI # 863-2N5686	ON Semiconductor	Bipolar Transistors - BJT 50A 80V 300W NPN RoHS: Not compliant	0
2N5686G DISTI # 8624893	ON Semiconductor	BJT NPN 50A 80V TO-204-2, EA	228	1:£9.7000
2N5686G DISTI # 2630288	ON Semiconductor	TRANS, BIPOL, NPN, 80V, TO-204AA RoHS: Compliant	253	1:$20.8200 10:$19.1500 20:$18.3500 100:$16.1700 200:$15.3700 500:$14.3900 1000:$13.2000
2N5686G DISTI # 2630288	ON Semiconductor	TRANS, BIPOL, NPN, 80V, TO-204AA RoHS: Compliant	262	1:£10.5600 5:£10.0500 10:£8.8600 50:£8.1400 100:£7.4100

Image	Part #	Description
	Mfr.#: 2N5684G OMO.#: OMO-2N5684G	Bipolar Transistors - BJT 50A 80V 300W PNP
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	Mfr.#: 1N4750A OMO.#: OMO-1N4750A-ON-SEMICONDUCTOR	DIODE ZENER 27V 1W DO41
	Mfr.#: LF347N OMO.#: OMO-LF347N-TEXAS-INSTRUMENTS	Operational Amplifiers - Op Amps Op Amp

2N5686G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes