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2N5686G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 12
1 Publication Order Number:
2N5684/D
2N5684 (PNP), 2N5686 (NPN)
High-Current
Complementary Silicon
Power Transistors
These packages are designed for use in high-power amplifier and
switching circuit applications.
Features
•High Current Capability - I
C
Continuous = 50 Amperes
•DC Current Gain - h
FE
= 15-60 @ I
C
= 25 Adc
•Low Collector-Emitter Saturation Voltage -
V
CE(sat)
= 1.0 Vdc (Max) @ I
C
= 25 Adc
•Pb-Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector-Emitter Voltage V
CEO
80 Vdc
Collector-Base Voltage V
CB
80 Vdc
Emitter-Base Voltage V
EB
5.0 Vdc
Collector Current - Continuous I
C
50 Adc
Base Current I
B
15 Adc
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
300
1.715
mW
mW/°C
Operating and Storage Temperature
Range
T
J
, T
stg
-65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction-to-Case
q
JC
0.584 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC Registered Data.
300
0
0 20 40 60 80 100 120 140 160 180 200
Figure 1. Power Derating
TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
250
150
100
50
200
Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed.
http://onsemi.com
50 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60-80 VOLTS, 300 WATTS
TO-204 (TO-3)
CASE 197A
STYLE 1
MARKING
DIAGRAM
2N568x = Device Code
x = 4 or 6
G = Pb-Free Package
A = Location Code
YY = Year
WW = Work Week
MEX = Country of Orgin
2N568xG
AYYWW
MEX
Device Package Shipping
ORDERING INFORMATION
2N5686 TO-3 100 Units/Tray
2N5686G TO-3
(Pb-Free)
100 Units/Tray
2N5684G TO-3
(Pb-Free)
100 Units/Tray
*For additional information on our Pb-Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
2N5684 (PNP), 2N5686 (NPN)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25_C unless otherwise noted) (Note 2)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (Note 3) (I
C
= 0.2 Adc, I
B
= 0) V
CEO(sus)
80 - Vdc
Collector Cutoff Current (V
CE
= 40 Vdc, I
B
= 0) I
CEO
-
1.0 mAdc
Collector Cutoff Current
(V
CE
= 80 Vdc, V
EB(off)
= 1.5 Vdc)
(V
CE
= 80 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 150_C)
I
CEX
-
-
2.0
10
mAdc
Collector Cutoff Current (V
CB
= 80 Vdc, I
E
= 0) I
CBO
- 2.0 mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0) I
EBO
- 5.0 mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(I
C
= 25 Adc, V
CE
= 2.0 Vdc)
(I
C
= 50 Adc, V
CE
= 5.0 Vdc)
h
FE
15
5.0
60
-
-
Collector-Emitter Saturation Voltage (Note 3)
(I
C
= 25 Adc, I
B
= 2.5 Adc)
(I
C
= 50 Adc, I
B
= 10 Adc)
V
CE(sat)
-
-
1.0
5.0
Vdc
Base-Emitter Saturation Voltage (Note 2) (I
C
= 25 Adc, I
B
= 2.5 Adc) V
BE(sat)
- 2.0 Vdc
Base-Emitter On Voltage (Note 2) (I
C
= 25 Adc, V
CE
= 2.0 Vdc) V
BE(on)
- 2.0 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product (I
C
= 5.0 Adc, V
CE
= 10 Vdc, f = 1.0 MHz) f
T
2.0 - MHz
Output Capacitance 2N5684
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz) 2N5686
C
ob
-
-
2000
1200
pF
Small-Signal Current Gain (I
C
= 10 Adc, V
CE
= 5.0 Vdc, f = 1.0 kHz) h
fe
15 -
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
Figure 2. Switching Time Test Circuit
1.0
0.5
Figure 3. Turn-On Time
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
0.7
0.5
0.2
0.07
0.05
0.02
0.01
0.7 1.0 2.0 3.0 5.0 7.0 10 50
T
J
= 25°C
I
C
/I
B
= 10
V
CC
= 30 V
0.03
0.3
30
0.1
20
2N5684 (PNP)
2N5686 (NPN)
t
r
t
d
+2.0 V
0
t
r
≤
20ns
-12V
10 to 100 μs
DUTY CYCLE ≈ 2.0%
R
B
R
L
V
CC
-30 V
TO SCOPE
t
r
≤ 20 ns
V
CC
-30 V
TO SCOPE
t
r
≤ 20 ns
R
L
R
B
+10V
0
-12V
10 to 100 μs
DUTY CYCLE ≈ 2.0%
t
r
≤ 20ns
V
BB
+4.0 V
FOR CURVES OF FIGURES 3 & 6, R
B
& R
L
ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN CIRCUITS, REVERSE ALL POLARITIES.
2N5684 (PNP), 2N5686 (NPN)
http://onsemi.com
3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
r(t), EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 2000500
θ
JC
(t) = r(t) θ
JC
θ
JC
= 0.584°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.05
0.02
0.01
SINGLE PULSE
0.1
1000
0.2
100
1.0
Figure 5. Active-Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
50
20
10
5.0
0.1
2.0 3.0 7.0 10 20 30 50 100
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
70
2.0
I
C
, COLLECTOR CURRENT (AMP)
T
J
= 200°C
CURVES APPLY BELOW
RATED V
CEO
dc
1.0 ms
500 μs
1.0
0.5
0.2
5.0
100 μs
5.0 ms
2N5684, 2N5686
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
- V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 200_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
4.0
0.5
Figure 6. Turn-Off Time
I
C
, COLLECTOR CURRENT (AMP)
2.0
1.0
0.6
0.4
0.2
0.7 1.0 2.0 3.0 7.0 20 50
T
J
= 25°C
I
B1
= I
B2
I
C
/I
B
= 10
V
CE
= 30 V
0.3
t, TIME (s)μ
t
s
5.0
5000
0.1
Figure 7. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
500
2.0 5.0 10 20 100500.2 0.5 1.0
C, CAPACITANCE (pF)
3000
1000
700
T
J
= 25°C
0.8
3.0
30
2000
10
2N5684 (PNP)
2N5686 (NPN)
t
f
C
ib
2N5684 (PNP)
2N5686 (NPN)
C
ob
C
ob
C
ib
P1-P3P4-P5

2N5686G

Mfr. #:
Buy 2N5686G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 50A 80V 300W NPN
Lifecycle:
New from this manufacturer.
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