SI3900DV-T1-E3

SI3900DV-T1-E3
Mfr. #:
SI3900DV-T1-E3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET TSOP6 20V DUAL N-CH (D-S) TREN
Lifecycle:
New from this manufacturer.
Datasheet:
SI3900DV-T1-E3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI3900DV-T1-E3 DatasheetSI3900DV-T1-E3 Datasheet (P4-P6)SI3900DV-T1-E3 Datasheet (P7-P9)
ECAD Model:
More Information:
SI3900DV-T1-E3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
TSOP-6
Number of Channels:
2 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
2.4 A
Rds On - Drain-Source Resistance:
125 mOhms
Vgs th - Gate-Source Threshold Voltage:
600 mV
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
4 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
1.15 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Series:
SI3
Transistor Type:
2 P-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
5 S
Fall Time:
6 ns
Product Type:
MOSFET
Rise Time:
30 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
14 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
SI3900DV-E3
Unit Weight:
0.000705 oz
Tags
SI3900DV-T, SI3900, SI390, SI39, SI3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    V***v
    V***v
    RU

    Thank you!

    2019-01-16
    O***k
    O***k
    UA

    Product received all perfectly recommend!!

    2019-02-08
    E***v
    E***v
    RU

    Excellent

    2019-07-02
***ure Electronics
Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin TSOP T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2400mA; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes
***nell
MOSFET, DUAL N CH, 20V, 0.1OHM, 2A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Si3 MOSFETs
Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Part # Mfg. Description Stock Price
SI3900DV-T1-E3
DISTI # V72:2272_09216709
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
829
  • 500:$0.4151
  • 250:$0.5042
  • 100:$0.5244
  • 25:$0.6143
  • 10:$0.7507
  • 1:$0.8536
SI3900DV-T1-E3
DISTI # V36:1790_09216709
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
0
  • 3000:$0.5236
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3CT-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
59310In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3DKR-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
59310In Stock
  • 1000:$0.2769
  • 500:$0.3461
  • 100:$0.4378
  • 10:$0.5710
  • 1:$0.6500
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3TR-ND
Vishay SiliconixMOSFET 2N-CH 20V 2A 6-TSOP
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
57000In Stock
  • 30000:$0.2128
  • 15000:$0.2184
  • 6000:$0.2268
  • 3000:$0.2436
SI3900DV-T1-E3
DISTI # 32062116
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R
RoHS: Compliant
829
  • 18:$0.8536
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3900DV-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel
Americas - 12000
  • 30000:$0.2559
  • 18000:$0.2629
  • 12000:$0.2709
  • 6000:$0.2819
  • 3000:$0.2909
SI3900DV-T1-E3
DISTI # SI3900DV-T1-E3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 2A 6-Pin TSOP T/R (Alt: SI3900DV-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel
Europe - 0
  • 30000:€0.2249
  • 18000:€0.2419
  • 12000:€0.2619
  • 6000:€0.3039
  • 3000:€0.4459
SI3900DV-T1-E3
DISTI # 65K2704
Vishay IntertechnologiesDUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-6,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.125ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:600mV RoHS Compliant: Yes0
  • 1000:$0.4430
  • 500:$0.5620
  • 250:$0.6070
  • 100:$0.6520
  • 50:$0.7510
  • 25:$0.8500
  • 1:$1.0300
SI3900DV-T1-E3
DISTI # 70026206
Vishay SiliconixMOSFET,TSOP6 20V Dual N-Channel (D-S) Trench
RoHS: Compliant
0
  • 3000:$0.5440
  • 6000:$0.5220
  • 15000:$0.5110
  • 30000:$0.4900
  • 75000:$0.4680
SI3900DV-T1-E3/BKN
DISTI # 70026358
Vishay SiliconixMOSFET,TSOP6 20V Dual N-Channel (D-S) Trench
RoHS: Compliant
0
  • 1:$0.5700
  • 250:$0.5400
  • 500:$0.5100
  • 1000:$0.4800
  • 2000:$0.4600
SI3900DV-T1-E3
DISTI # 781-SI3900DV-E3
Vishay IntertechnologiesMOSFET TSOP6 20V DUAL N-CH (D-S) TREN
RoHS: Compliant
16648
  • 1:$1.1100
  • 10:$0.9210
  • 100:$0.7070
  • 500:$0.6080
  • 1000:$0.4790
  • 3000:$0.4470
  • 6000:$0.4250
  • 9000:$0.4160
SI3900DV-T1
DISTI # 781-SI3900DV
Vishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SI3900DV-E3
RoHS: Not compliant
0
    SI3900DV-T1-E3Vishay Intertechnologies2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET281
    • 121:$0.3500
    • 28:$0.5000
    • 1:$1.0000
    SI3900DV-T1-E3Vishay Intertechnologies 2684
      SI3900DV-T1-E3
      DISTI # 2459244
      Vishay IntertechnologiesDUAL N CHANNEL, MOSFET, 20V, 2.4A, TSOP-
      RoHS: Compliant
      0
      • 500:$0.5220
      • 100:$0.6600
      • 10:$0.8600
      • 1:$0.9800
      SI3900DV-T1-E3Vishay IntertechnologiesMOSFET TSOP6 20V DUAL N-CH (D-S) TREN
      RoHS: Compliant
      Americas -
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        USBLC6-2SC6

        Mfr.#: USBLC6-2SC6

        OMO.#: OMO-USBLC6-2SC6

        TVS Diodes / ESD Suppressors ESD Protection Low Cap
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        Mfr.#: TLV61046ADBVR

        OMO.#: OMO-TLV61046ADBVR

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        CC0402KRX7R9BB473

        Mfr.#: CC0402KRX7R9BB473

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        Multilayer Ceramic Capacitors MLCC - SMD/SMT 47000pF 50V 10% 0402 Case Size
        LSM6DSOXTR

        Mfr.#: LSM6DSOXTR

        OMO.#: OMO-LSM6DSOXTR-STMICROELECTRONICS

        INEMO INERTIAL MODULE: 3D ACCELE
        USBLC6-2SC6

        Mfr.#: USBLC6-2SC6

        OMO.#: OMO-USBLC6-2SC6-STMICROELECTRONICS

        TVS DIODE 5.25V 17V SOT23-6
        CC0402KRX7R9BB473

        Mfr.#: CC0402KRX7R9BB473

        OMO.#: OMO-CC0402KRX7R9BB473-YAGEO

        Cap Ceramic 0.047uF 50V X7R 10% SMD 0402 125C T/R
        UJ2-MIBH2-4-SMT-TR

        Mfr.#: UJ2-MIBH2-4-SMT-TR

        OMO.#: OMO-UJ2-MIBH2-4-SMT-TR-CUI

        USB JACK 2.0, MICRO B TYPE, 5
        TLV61046ADBVR

        Mfr.#: TLV61046ADBVR

        OMO.#: OMO-TLV61046ADBVR-TEXAS-INSTRUMENTS

        IC REG BOOST ADJ SOT23-6
        Availability
        Stock:
        16
        On Order:
        1999
        Enter Quantity:
        Current price of SI3900DV-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $1.11
        $1.11
        10
        $0.92
        $9.21
        100
        $0.71
        $70.70
        500
        $0.61
        $304.00
        1000
        $0.48
        $479.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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