SI7997DP-T1-GE3

SI7997DP-T1-GE3
Mfr. #:
SI7997DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
SI7997DP-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI7997DP-T1-GE3 DatasheetSI7997DP-T1-GE3 Datasheet (P4-P6)SI7997DP-T1-GE3 Datasheet (P7-P9)SI7997DP-T1-GE3 Datasheet (P10-P12)SI7997DP-T1-GE3 Datasheet (P13)
ECAD Model:
More Information:
SI7997DP-T1-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
PowerPAK-SO-8
Number of Channels:
2 Channel
Transistor Polarity:
P-Channel
Vds - Drain-Source Breakdown Voltage:
30 V
Id - Continuous Drain Current:
60 A
Rds On - Drain-Source Resistance:
5.5 mOhms
Vgs th - Gate-Source Threshold Voltage:
1 V
Vgs - Gate-Source Voltage:
10 V
Qg - Gate Charge:
106 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
46 W
Configuration:
Dual
Channel Mode:
Enhancement
Tradename:
TrenchFET
Packaging:
Reel
Height:
1.04 mm
Length:
6.15 mm
Series:
SI7
Transistor Type:
2 P-Channel
Width:
5.15 mm
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
71 S
Fall Time:
40 ns, 40 ns
Product Type:
MOSFET
Rise Time:
10 ns, 50 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
80 ns, 115 ns
Typical Turn-On Delay Time:
15 ns, 60 ns
Part # Aliases:
SI7997DP-GE3
Unit Weight:
0.017870 oz
Tags
SI799, SI79, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual P-Channel 30 V 0.0055 Ohm 46 W Surface Mount Power Mosfet - PowerPAK-SO-8
***p One Stop Japan
Trans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO EP T/R
***et Europe
Trans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R
*** Source Electronics
Dual P-Channel 30 V (D-S) MOSFET
***i-Key
MOSFET 2P-CH 30V 60A PPAK SO-8
***Components
Dual P-Ch PowerPAK SO-8 30V 55mohm @ 10V
***ied Electronics & Automation
-30V 5.5mOhm@10V 60A P-Ch G-III
***
P-CHANNEL 30-V (D-S)
***ark
Transistor Polarity:dual P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0045Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power Dissipation Pd:46W Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL P-CH, -20.8V, POWERPAK SO; Transistor Polarity:Dual P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0045ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power Dissipation Pd:46W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, DOPPIO CAN P, -20.8V POWERPAK SO; Polarità Transistor:Canale P Doppio; Corrente Continua di Drain Id:-60A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0045ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2.2V; Dissipazione di Potenza Pd:46W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (20-Jun-2016)
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Part # Mfg. Description Stock Price
SI7997DP-T1-GE3
DISTI # 30618826
Vishay IntertechnologiesTrans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant
700
  • 10:$2.7375
SI7997DP-T1-GE3
DISTI # SI7997DP-T1-GE3CT-ND
Vishay SiliconixMOSFET 2P-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
2600In Stock
  • 1000:$1.1134
  • 500:$1.3438
  • 100:$1.6356
  • 10:$2.0350
  • 1:$2.2700
SI7997DP-T1-GE3
DISTI # SI7997DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET 2P-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
2600In Stock
  • 1000:$1.1134
  • 500:$1.3438
  • 100:$1.6356
  • 10:$2.0350
  • 1:$2.2700
SI7997DP-T1-GE3
DISTI # SI7997DP-T1-GE3TR-ND
Vishay SiliconixMOSFET 2P-CH 30V 60A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 6000:$0.9691
  • 3000:$1.0064
SI7997DP-T1-GE3
DISTI # C1S803602094998
Vishay IntertechnologiesTrans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO EP T/R
RoHS: Compliant
700
  • 500:$1.2200
  • 250:$1.3900
  • 100:$1.4000
  • 50:$1.6600
  • 10:$1.8200
  • 1:$2.1900
SI7997DP-T1-GE3
DISTI # V72:2272_09215700
Vishay IntertechnologiesTrans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R
RoHS: Compliant
0
    SI7997DP-T1-GE3
    DISTI # V36:1790_09215700
    Vishay IntertechnologiesTrans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R
    RoHS: Compliant
    0
    • 3000000:$0.9681
    • 1500000:$0.9682
    • 300000:$0.9717
    • 30000:$0.9763
    • 3000:$0.9770
    SI7997DP-T1-GE3
    DISTI # SI7997DP-T1-GE3
    Vishay IntertechnologiesTrans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R (Alt: SI7997DP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
      SI7997DP-T1-GE3
      DISTI # SI7997DP-T1-GE3
      Vishay IntertechnologiesTrans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R (Alt: SI7997DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 30000:€0.9699
      • 18000:€1.0259
      • 12000:€1.1549
      • 6000:€1.4009
      • 3000:€1.9999
      SI7997DP-T1-GE3
      DISTI # SI7997DP-T1-GE3
      Vishay IntertechnologiesTrans MOSFET P-CH 30V 20.8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7997DP-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.9103
      • 18000:$0.9354
      • 12000:$0.9621
      • 6000:$1.0028
      • 3000:$1.0335
      SI7997DP-T1-GE3
      DISTI # 05AC9510
      Vishay IntertechnologiesMOSFET, DUAL P-CH, -20.8V, POWERPAK SO,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V, RoHS Compliant: Yes3000
      • 1:$1.0400
      • 3000:$1.0400
      SI7997DP-T1-GE3
      DISTI # 01AC5009
      Vishay IntertechnologiesMOSFET, DUAL P-CH, -20.8V, POWERPAK SO,Transistor Polarity:Dual P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V, RoHS Compliant: Yes6304
      • 500:$1.4100
      • 250:$1.5000
      • 100:$1.5900
      • 50:$1.7300
      • 25:$1.8600
      • 10:$2.0000
      • 1:$2.3700
      SI7997DP-T1-GE3.
      DISTI # 26AC3351
      Vishay IntertechnologiesTransistor Polarity:Dual P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0045ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V,Power Dissipation Pd:46W RoHS Compliant: Yes0
      • 1:$1.0400
      • 3000:$1.0400
      SI7997DP-T1-GE3
      DISTI # 70459570
      Vishay Siliconix-30V 5.5mOhm@10V 60A P-Ch G-III
      RoHS: Compliant
      0
      • 3000:$1.5110
      SI7997DP-T1-GE3
      DISTI # 781-SI7997DP-T1-GE3
      Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant
      877
      • 1:$2.2000
      • 10:$1.8300
      • 100:$1.4200
      • 500:$1.2400
      • 1000:$1.0200
      • 3000:$0.9580
      • 6000:$0.9230
      SI7997DP-T1-GE3
      DISTI # 1807325
      Vishay IntertechnologiesDUAL P-CH POWERPAK SO-8 30V 55MOHM @ 10V, RL2980
      • 6000:£0.8200
      • 3000:£0.8330
      SI7997DP-T1-GE3
      DISTI # 2679706
      Vishay IntertechnologiesMOSFET, DUAL P-CH, -20.8V, POWERPAK SO
      RoHS: Compliant
      3000
      • 6000:$1.5000
      • 3000:$1.5200
      SI7997DP-T1-GE3
      DISTI # 2646396
      Vishay IntertechnologiesMOSFET, DUAL P-CH, -20.8V, POWERPAK SO
      RoHS: Compliant
      5814
      • 500:$1.8700
      • 100:$2.1400
      • 10:$2.7600
      • 1:$3.3200
      SI7997DP-T1-GE3
      DISTI # 2646396
      Vishay IntertechnologiesMOSFET, DUAL P-CH, -20.8V, POWERPAK SO6739
      • 1500:£0.8460
      • 500:£0.9630
      • 100:£1.0800
      • 50:£1.4000
      • 5:£1.5100
      SI7997DP-T1-GE3Vishay IntertechnologiesMOSFET -30V Vds 20V Vgs PowerPAK SO-8
      RoHS: Compliant
      Americas - 78000
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        Current price of SI7997DP-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
        Reference price (USD)
        Quantity
        Unit Price
        Ext. Price
        1
        $2.20
        $2.20
        10
        $1.83
        $18.30
        100
        $1.42
        $142.00
        500
        $1.24
        $620.00
        1000
        $1.02
        $1 020.00
        Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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