IPB60R190C6

Mfr. #:: IPB60R190C6
Manufacturer:: Infineon Technologies
Description:: MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6
Lifecycle:: New from this manufacturer.
Datasheet:: IPB60R190C6 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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ECAD Model:
More Information:: IPB60R190C6 more Information

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: TO-263-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 600 V

Id - Continuous Drain Current:: 20.2 A

Rds On - Drain-Source Resistance:: 170 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 63 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 150 C

Pd - Power Dissipation:: 151 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: CoolMOS

Packaging:: Reel

Height:: 4.4 mm

Length:: 10 mm

Series:: CoolMOS C6

Transistor Type:: 1 N-Channel

Width:: 9.25 mm

Brand:: Infineon Technologies

Fall Time:: 9 ns

Product Type:: MOSFET

Rise Time:: 11 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 110 ns

Typical Turn-On Delay Time:: 15 ns

Part # Aliases:: IPB60R190C6ATMA1 IPB6R19C6XT SP000641916

Unit Weight:: 0.139332 oz

Tags: IPB60R190C, IPB60R190, IPB60R19, IPB60R1, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R190C6 More Information

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Part #	Mfg.	Description	Stock	Price
IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$1.6261
IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call	500:$1.9859 100:$2.4525 10:$2.9910 1:$3.3500
IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 600V 20.2A TO263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call	500:$1.9859 100:$2.4525 10:$2.9910 1:$3.3500
IPB60R190C6 DISTI # IPB60R190C6	Infineon Technologies AG	Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: IPB60R190C6) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0
IPB60R190C6 DISTI # SP000641916	Infineon Technologies AG	Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.6900 2000:€1.3900 4000:€1.2900 6000:€1.1900 10000:€1.0900
IPB60R190C6 DISTI # SP000641916	Infineon Technologies AG	Trans MOSFET N-CH 650V 20.2A 4-Pin TO-263 T/R (Alt: SP000641916) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	1000:€1.1900 2000:€1.1900 4000:€1.1900 6000:€1.1900 10000:€1.1900
IPB60R190C6XT DISTI # IPB60R190C6ATMA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 20.2A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB60R190C6ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$1.4900 2000:$1.3900 4000:$1.3900 6000:$1.2900 10000:$1.2900
IPB60R190C6ATMA1 DISTI # 30T1830	Infineon Technologies AG	MOSFET,N CH,600V,20.2A,TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:20.2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.17ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	0	1:$2.8600 10:$2.4300 100:$1.9500 500:$1.8000 1000:$1.6200 2500:$1.3100 5000:$1.2700
IPB60R190C6 DISTI # 726-IPB60R190C6	Infineon Technologies AG	MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant	0	1:$2.8000 10:$2.3800 100:$2.0600 250:$1.9600 500:$1.7600 1000:$1.4800
IPB60R190C6ATMA1 DISTI # 726-IPB60R190C6ATMA1	Infineon Technologies AG	MOSFET N-Ch 600V 20.2A D2PAK-2 CoolMOS C6 RoHS: Compliant	0	1:$2.8000 10:$2.3800 100:$2.0600 250:$1.9600 500:$1.7600 1000:$1.4800
IPB60R190C6	Infineon Technologies AG	Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	3	1000:$1.2800 500:$1.3400 100:$1.4000 25:$1.4600 1:$1.5700
IPB60R190C6ATMA1 DISTI # 7533005P	Infineon Technologies AG	MOSFET N-CH 650V 20.2A COOLMOS C6 TO263, RL	200	10:£1.8200 50:£1.6400 250:£1.4600 500:£1.2800
IPB60R190C6ATMA1 DISTI # IPB60R190C6ATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,600V,20.2A,151W,PG-TO263-3	133	1:$2.9700 3:$2.5500 10:$2.0500 100:$1.7800
IPB60R190C6	Infineon Technologies AG	600V,20.2A,N channel Power MOSFET	7	1:$2.3200 100:$1.9400 500:$1.7100 1000:$1.6600
IPB60R190C6ATMA1 DISTI # 1860814	Infineon Technologies AG	MOSFET,N CH,600V,20.2A,TO263 RoHS: Compliant	0	1:£2.5700 10:£1.7500 100:£1.6500 250:£1.5600 500:£1.3700

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Availability

Stock:: Available
On Order:: 1988
Enter Quantity:

Current price of IPB60R190C6 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

Reference price (USD)

Quantity
Unit Price
Ext. Price

1: ~~$2.79~~; ~~$2.79~~

10: ~~$2.37~~; ~~$23.70~~

100: ~~$2.06~~; ~~$206.00~~

250: ~~$1.95~~; ~~$487.50~~

500: ~~$1.75~~; ~~$875.00~~

Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.

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IPB60R190C6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes