IRF7779L2TR1PBF

Mfr. #:: IRF7779L2TR1PBF
Manufacturer:: Infineon / IR
Description:: MOSFET 150V 67A 11mOhm 97nC Qg
Lifecycle:: New from this manufacturer.
Datasheet:: IRF7779L2TR1PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: IRF7779L2TR1PBF Datasheet IRF7779L2TR1PBF Datasheet (P4-P6)IRF7779L2TR1PBF Datasheet (P7-P9)IRF7779L2TR1PBF Datasheet (P10-P11)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-L8

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 150 V

Id - Continuous Drain Current:: 67 A

Rds On - Drain-Source Resistance:: 9 mOhms

Vgs th - Gate-Source Threshold Voltage:: 5 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 97 nC

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 125 W

Configuration:: Single

Packaging:: Reel

Height:: 0.74 mm

Length:: 9.15 mm

Transistor Type:: 1 N-Channel

Width:: 7.1 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 83 S

Fall Time:: 12 ns

Product Type:: MOSFET

Rise Time:: 19 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Part # Aliases:: SP001575282

Tags: IRF777, IRF77, IRF7, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF7779L2TR1PBF Description

***ical: Trans MOSFET N-CH 150V 67A 15-Pin Direct-FET L8 T/R

***Components: MOSFET N-Ch 150V 67A Direct-FET L8

***ment14 APAC: N CH MOSFET, 150V, 11A DIRECTFET L8

***ied Electronics & Automation: MOSFET; 150V, 67A, 11 MOHM, 97NC QG

***i-Key: MOSFET N-CH 150V 375A DIRECTFET

***ernational Rectifier: A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ark: N CH MOSFET, 150V, 11A DIRECTFET L8; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.009ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 150V, 67A, DIRECTFET L8; Transistor Polarity:N Channel; Current Id Max:67A; Drain Source Voltage Vds:150V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Voltage Vgs Max:20V; Power Dissipation:125W; Operating Temperature Range:-55°C to +175°C; No. of Pins:5

Market price

Part #	Mfg.	Description	Stock	Price
IRF7779L2TR1PBF DISTI # IRF7779L2TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 375A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF7779L2TR1PBF DISTI # IRF7779L2TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 150V 375A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF7779L2TR1PBF DISTI # IRF7779L2TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 150V 375A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF7779L2TR1PBF DISTI # 70019645	Infineon Technologies AG	IRF7779L2TR1PBF N-channel MOSFET Transistor,375 A,150 V,11-Pin DirectFET L8 RoHS: Compliant	0	1000:$3.4300
IRF7779L2TR1PBF DISTI # 942-IRF7779L2TR1PBF	Infineon Technologies AG	MOSFET 150V 67A 11mOhm 97nC Qg RoHS: Compliant	0
IRF7779L2TR1PBF DISTI # 1791559	Infineon Technologies AG	MOSFET, N CH, 150V, 67A, DIRECTFET L8 RoHS: Compliant	0	1:$9.7600 10:$5.9600 100:$5.6700 250:$5.3600 500:$5.1700 1000:$5.0000 2000:$4.7900 5000:$4.6600

Related products

Image	Part #	Description
	Mfr.#: IRF7779L2TRPBF OMO.#: OMO-IRF7779L2TRPBF	MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
	Mfr.#: IRF7779L2TR1PBF OMO.#: OMO-IRF7779L2TR1PBF	MOSFET 150V 67A 11mOhm 97nC Qg
	Mfr.#: IRF7779L2TRPBF. OMO.#: OMO-IRF7779L2TRPBF--1190	Transistor Polarity:N Channel, Continuous Drain Current Id:67A, Drain Source Voltage Vds:150V, On Resistance Rds(on):0.009ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
	Mfr.#: IRF7779L2TR1PBF OMO.#: OMO-IRF7779L2TR1PBF-INFINEON-TECHNOLOGIES	IGBT Transistors MOSFET 150V 67A 11mOhm 97nC Qg
	Mfr.#: IRF7779L2TRPBF OMO.#: OMO-IRF7779L2TRPBF-INFINEON-TECHNOLOGIES	MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC

Availability

Stock:: Available
On Order:: 2500
Enter Quantity:

Current price of IRF7779L2TR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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IRF7779L2TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes