DirectFET Power MOSFET
Typical values (unless otherwise specified)
DirectFET ISOMETRIC
L8
Applicable DirectFET Outline and Substrate Outline
l RoHS Compliant, Halogen Free
l Lead-Free (Qualified up to 260°C Reflow)
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface Mount Techniques
l Industrial Qualified
Description
The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance in a package that has a footprint smaller than a D
2
PAK and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems.
The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in
the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability
improvements, and makes this device ideal for high performance power converters.
Fig 1. Typical On-Resistance vs. Gate Voltage
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Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.33mH, R
G
= 25Ω, I
AS
= 40A.
Notes:
Fig 2. Typical On-Resistance vs. Drain Current
SB SC M2 M4 L4 L6 L8
D
S
G
D
S
S
S
S S
S
S
4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
GS
, Gate-to-Source Voltage (V)
0.00
10.00
20.00
30.00
40.00
50.00
T
y
p
i
c
a
l
R
D
S
(
o
n
)
,
(
m
Ω
)
T
J
= 25°C
T
J
= 125°C
I
D
= 40A
50 70 90 110
I
D
, Drain Current (A)
8.00
12.00
16.00
20.00
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
C
= 25°C
V
GS
= 7.0V
V
GS
= 8.0V
V
GS
= 10V
V
GS
= 15V
V
DSS
V
GS
R
DS(on)
150V min ±20V max
9.0mΩ@ 10V
Q
g tot
Q
gd
V
gs(th)
97nC 33nC 4.0V
IRF7779L2PbF
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014
Form Quantity
IRF7779L2TRPbF DirectFET2 Large Can Tape and Reel 4000 "TR" suffix
IRF7779L2TR1PbF
DirectFET2 Large Can Tape and Reel 1000 "TR1" suffix EOL notice # 264
NoteOrderable part number Package Type
Standard Pack
Parameter Units
Drain-to-Source Voltage V
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
A
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy mJ
Avalanche Current A
375
270
47
11
270
±20
150
67
40
