FDP032N08B-F102

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

80 V

Id - Continuous Drain Current:

211 A

Rds On - Drain-Source Resistance:

2.85 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

111 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

263 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

16.3 mm

Length:

10.67 mm

Series:

FDP032N08B

Transistor Type:

1 N-Channel

Width:

4.7 mm

Brand:

ON Semiconductor / Fairchild

Forward Transconductance - Min:

168 S

Fall Time:

31 ns

Product Type:

MOSFET

Rise Time:

44 ns

Factory Pack Quantity:

800

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

71 ns

Typical Turn-On Delay Time:

38 ns

Part # Aliases:

FDP032N08B_F102

Unit Weight:

0.063493 oz

Tags

FDP032N08B, FDP032, FDP03, FDP0, FDP