SIHG22N60EF-GE3

SIHG22N60EF-GE3
Mfr. #:
SIHG22N60EF-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
Lifecycle:
New from this manufacturer.
Datasheet:
SIHG22N60EF-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIHG22N60EF-GE3 more Information
Product Attribute
Attribute Value
Manufacturer:
Vishay
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-247AC-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
600 V
Id - Continuous Drain Current:
19 A
Rds On - Drain-Source Resistance:
182 mOhms
Vgs th - Gate-Source Threshold Voltage:
2 V
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
96 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
179 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Series:
EF
Transistor Type:
1 N-Channel
Brand:
Vishay / Siliconix
Forward Transconductance - Min:
5.8 S
Fall Time:
25 ns
Product Type:
MOSFET
Rise Time:
21 ns
Factory Pack Quantity:
50
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
58 ns
Typical Turn-On Delay Time:
15 ns
Tags
SIHG22N60E, SIHG22N60, SIHG22N6, SIHG22, SIHG2, SIHG, SIH
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We provide 90-360 days warranty.

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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Image Part # Description
SIHG22N60E-E3

Mfr.#: SIHG22N60E-E3

OMO.#: OMO-SIHG22N60E-E3

MOSFET 600V Vds 30V Vgs TO-247AC
SIHG22N60E-GE3

Mfr.#: SIHG22N60E-GE3

OMO.#: OMO-SIHG22N60E-GE3

MOSFET 600V Vds 30V Vgs TO-247AC
SIHG22N60EF-GE3

Mfr.#: SIHG22N60EF-GE3

OMO.#: OMO-SIHG22N60EF-GE3

MOSFET Nch 600V Vds 30V Vgs TO-247AC; w/diode
SIHG22N60EL-GE3

Mfr.#: SIHG22N60EL-GE3

OMO.#: OMO-SIHG22N60EL-GE3

MOSFET 600V Vds 30V Vgs TO-247AC
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Mfr.#: SIHG22N60AEL-GE3

OMO.#: OMO-SIHG22N60AEL-GE3-VISHAY

MOSFET N-CHAN 600V
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Mfr.#: SIHG22N50D

OMO.#: OMO-SIHG22N50D-1190

New and Original
SIHG22N50DGE3

Mfr.#: SIHG22N50DGE3

OMO.#: OMO-SIHG22N50DGE3-1190

Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-247AC
SIHG22N60E-E3

Mfr.#: SIHG22N60E-E3

OMO.#: OMO-SIHG22N60E-E3-VISHAY

MOSFET N-CH 600V 21A TO247AC
SIHG22N60E-GE3

Mfr.#: SIHG22N60E-GE3

OMO.#: OMO-SIHG22N60E-GE3-VISHAY

MOSFET N-CH 600V 21A TO247AC
SIHG22N60S-E3/G22N60S

Mfr.#: SIHG22N60S-E3/G22N60S

OMO.#: OMO-SIHG22N60S-E3-G22N60S-1190

New and Original
Availability
Stock:
Available
On Order:
5500
Enter Quantity:
Current price of SIHG22N60EF-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$4.27
$4.27
10
$3.54
$35.40
100
$2.91
$291.00
250
$2.82
$705.00
500
$2.53
$1 265.00
1000
$2.13
$2 130.00
2500
$2.03
$5 075.00
5000
$1.95
$9 750.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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