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IRFU13N20DPBF

IRFU13N20DPBF
Mfr. #:
IRFU13N20DPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 200V 13A 235mOhm 25nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRFU13N20DPBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
IRFU13N20DPBF more Information
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
Through Hole
Package / Case:
TO-251-3
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
200 V
Id - Continuous Drain Current:
13 A
Rds On - Drain-Source Resistance:
235 mOhms
Vgs - Gate-Source Voltage:
30 V
Qg - Gate Charge:
25 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
110 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
6.22 mm
Length:
6.73 mm
Transistor Type:
1 N-Channel
Width:
2.38 mm
Brand:
Infineon Technologies
Forward Transconductance - Min:
6.2 S
Fall Time:
10 ns
Product Type:
MOSFET
Rise Time:
27 ns
Factory Pack Quantity:
3000
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
17 ns
Typical Turn-On Delay Time:
11 ns
Part # Aliases:
SP001573640
Unit Weight:
0.139332 oz
Tags
IRFU13N, IRFU13, IRFU1, IRFU, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 0.235 Ohm 38 nC HEXFET® Power Mosfet - IPAK
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):235mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
*** Source Electronics
Trans MOSFET N-CH 200V 17A 3-Pin(3+Tab) IPAK / MOSFET N-CH 200V 17A I-PAK
***ernational Rectifier
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MOSFET, 200V, 17A, 165 MOHM, 27 NC QG, I-PAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):165mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:IPAK ;RoHS Compliant: Yes
***ark
Transistor,mosfet,n-Channel,200V V(Br)Dss,9A I(D),to-251Aa Rohs Compliant: Yes
***emi
N-Channel QFET® MOSFET 200V, 9.0A, 280mΩ
***r Electronics
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
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IRFU6215PBF P-channel MOSFET Transistor, 13 A, 150 V, 3-Pin IPAK
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-150V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS
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Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - IPAK
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 200V 7.6A IPAK
***ser
MOSFETs 200V N-Channel QFET
***el Nordic
Contact for details
***ark
Mosfet Transistor, N Channel, 10 A, 250 V, 0.32 Ohm, 10 V, 4.5 V
***emi
Single N-Channel Power MOSFET 250V, 10A, 420mΩ
***r Electronics
Small Signal Field-Effect Transistor, 10A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***nell
N CHANNEL MOSFET, 250V, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.32ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 52W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018)
***emi
Power MOSFET, N-Channel, QFET®, 200 V, 7.8 A, 360 mΩ, IPAK
***et
Trans MOSFET N-CH 200V 7.8A 3-Pin(3+Tab) IPAK Rail
***r Electronics
Power Field-Effect Transistor, 7.8A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ark
N-Ch/200V/10A/qfet Rohs Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
200-250V HEXFET® Power MOSFETs
Infineon 200-250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200-250V HEXFET® Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Infineon HEXFET® Power MOSFETs are known for provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Part # Mfg. Description Stock Price
IRFU13N20DPBF
DISTI # V99:2348_13892676		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 9000:$0.3943
  • 3000:$0.4381
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 10:$0.8195
  • 1:$0.9259
IRFU13N20DPBF
DISTI # IRFU13N20DPBF-ND		Infineon Technologies AGMOSFET N-CH 200V 13A I-PAK
RoHS: Compliant
Min Qty: 1
Container: Tube		5875In Stock
  • 1000:$0.5978
  • 500:$0.7572
  • 100:$0.9764
  • 10:$1.2350
  • 1:$1.3900
IRFU13N20DPBF
DISTI # 31335313		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 16:$0.8195
IRFU13N20DPBF
DISTI # 24161208		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		1980
  • 1000:$0.5136
  • 150:$0.6096
  • 22:$0.6720
IRFU13N20DPBF
DISTI # IRFU13N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK - Rail/Tube (Alt: IRFU13N20DPBF)
RoHS: Compliant
Min Qty: 3000
Container: Tube		Americas - 0
  • 3000:$0.4169
  • 6000:$0.4019
  • 12000:$0.3869
  • 18000:$0.3739
  • 30000:$0.3679
IRFU13N20DPBF
DISTI # IRFU13N20DPBF		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK (Alt: IRFU13N20DPBF)
RoHS: Compliant
Min Qty: 3000		Asia - 0
  • 3000:$0.4600
  • 6000:$0.4472
  • 9000:$0.4351
  • 15000:$0.4237
  • 30000:$0.4182
  • 75000:$0.4128
  • 150000:$0.4076
IRFU13N20DPBF
DISTI # 70018362		Infineon Technologies AGIRFU13N20DPBF N-channel MOSFET Module,13 A,200 V,3-Pin IPAK
RoHS: Compliant		0
  • 675:$1.4400
IRFU13N20DPBFInfineon Technologies AGSingle N-Channel 200 V 0.235 Ohm 38 nC HEXFET Power Mosfet - IPAK
RoHS: Compliant		2570Tube
  • 20:$0.5550
  • 200:$0.5000
  • 1000:$0.4250
IRFU13N20DPBF
DISTI # 942-IRFU13N20DPBF		Infineon Technologies AGMOSFET MOSFT 200V 13A 235mOhm 25nC
RoHS: Compliant		2828
  • 1:$1.1900
  • 10:$1.0200
  • 100:$0.7790
  • 500:$0.6890
  • 1000:$0.5440
IRFU13N20DPBF
DISTI # 8655847P		Infineon Technologies AGMOSFET N-CH 200V 13A HEXFET SMPS IPAK, TU445
  • 100:£0.5640
  • 250:£0.5310
  • 500:£0.4990
  • 1350:£0.3930
IRFU13N20DPBF
DISTI # C1S322000496783		Infineon Technologies AGTrans MOSFET N-CH 200V 13A 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		2906
  • 1000:$0.4867
  • 500:$0.5950
  • 100:$0.6389
  • 10:$0.8195
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Availability
Stock:
Available
On Order:
1986
Enter Quantity:
Current price of IRFU13N20DPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$1.18
$1.18
10
$1.01
$10.10
100
$0.78
$77.90
500
$0.69
$344.50
1000
$0.54
$544.00
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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