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FDS3612

FDS3612
Mfr. #:
FDS3612
Manufacturer:
ON Semiconductor / Fairchild
Description:
MOSFET SO-8
Lifecycle:
New from this manufacturer.
Datasheet:
FDS3612 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FDS3612 DatasheetFDS3612 Datasheet (P4-P5)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
3.4 A
Rds On - Drain-Source Resistance:
120 mOhms
Vgs - Gate-Source Voltage:
20 V
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 175 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Type:
MOSFET
Width:
3.9 mm
Brand:
ON Semiconductor / Fairchild
Forward Transconductance - Min:
11 S
Fall Time:
4.5 ns
Product Type:
MOSFET
Rise Time:
2 ns
Factory Pack Quantity:
2500
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
23 ns
Typical Turn-On Delay Time:
8.5 ns
Unit Weight:
0.002998 oz
Tags
FDS36, FDS3, FDS
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 100V 3.4A 8SOIC
***Yang
SO8, SINGLE, NCH - Bulk
***el Electronic
RS-232 TRANSMITTERS/RECIEVERS
***ser
MOSFETs SO-8
***Yang
Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ
***ure Electronics
2N-Channel 100 V 2.7 A 105 mOhm Shielded Power Trench Mosfet - SOIC-8
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
***nell
MOSFET, NN CH, 100V, 2.7A, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.086ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
*** Source Electronics
MOSFET N-CH 100V 4.5A 8-SO / Trans MOSFET N-CH 100V 4.5A Automotive 8-Pin SOIC T/R
***emi
N-Channel PowerTrench® MOSFET 100V, 4.5A, 60mΩ
***ure Electronics
N-Channel 100 V 60 mOhm PowerTrench Mosfet SOIC-8
***ment14 APAC
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS3692; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
***Yang
Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R - Tape and Reel
***emi
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ
***ure Electronics
FDS89161LZ Series 100 V 2.7 A 105 mOhm Dual N-Ch PowerTrench Mosfet - SOIC-8
***enic
100V 2.7A 105m´Î@10V2.7A 1.6W 2.2V@250Ã×A 2 N-Channel SOIC-8_150mil MOSFETs ROHS
***ment14 APAC
MOSFET, N-CH, 100V, 2.7A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Source Voltage Vds:100V; On Resistance
***rchild Semiconductor
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
***nell
MOSFET, N-CH, 100V, 2.7A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 1.6W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***(Formerly Allied Electronics)
IRF7380PBF Dual N-channel MOSFET Transistor; 3.6 A; 80 V; 8-Pin SOIC
***ure Electronics
Single N-Channel 80 V 73 mOhm 15 nC HEXFET® Power Mosfet - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 80V 3.6A 8-Pin SOIC Tube
*** Stop Electro
Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, NN, SO-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.073ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Di
***ineon
Benefits: RoHS Compliant; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design; Dual N-Channel MOSFET
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;SO-8;PD 2.5W;VGS +/-20
***ponent Sense
Single N-Channel 100 V 2.5 W 34 nC Hexfet Power Mosfet Surface Mount - SOIC-8
*** Source Electronics
Trans MOSFET N-CH 100V 7.3A 8-Pin SOIC Tube / MOSFET N-CH 100V 7.3A 8-SOIC
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***roFlash
Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: Load Switch High Side
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.3A; On Resistance Rds(On):0.018Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes
Part # Mfg. Description Stock Price
FDS3612
DISTI # FDS3612-ND		ON SemiconductorMOSFET N-CH 100V 3.4A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    FDS3612
    DISTI # 512-FDS3612    		ON SemiconductorMOSFET SO-8
    RoHS: Compliant    		0
      FDS3612Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3.4A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      RoHS: Compliant      		4809
      • 1000:$0.6100
      • 500:$0.6400
      • 100:$0.6600
      • 25:$0.6900
      • 1:$0.7500
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      Availability
      Stock:
      Available
      On Order:
      3500
      Enter Quantity:
      Current price of FDS3612 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
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