SIE810DF-T1-GE3

SIE810DF-T1-GE3
Mfr. #:
SIE810DF-T1-GE3
Manufacturer:
Vishay
Description:
RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
Lifecycle:
New from this manufacturer.
Datasheet:
SIE810DF-T1-GE3 Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
SIE810DF-T1-GE3 more Information
Product Attribute
Attribute Value
Tags
SIE81, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R
***ure Electronics
MOSFET 20V 236A 125W 1.4mohm @ 10V
***i-Key
MOSFET N-CH 20V 60A POLARPAK
***
N-CHANNEL 20-V (D-S) MOSFET
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Part # Mfg. Description Stock Price
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 20V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.8141
SIE810DF-T1-GE3
DISTI # SIE810DF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.7900
  • 6000:$1.6900
  • 12000:$1.5900
  • 18000:$1.5900
  • 30000:$1.4900
SIE810DF-T1-GE3
DISTI # 781-SIE810DF-GE3
Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10V
RoHS: Compliant
0
  • 1:$3.4800
  • 10:$2.8800
  • 100:$2.3700
  • 250:$2.3000
  • 500:$2.0900
  • 1000:$2.0800
  • 3000:$2.0700
SIE810DF-T1-GE3Vishay IntertechnologiesMOSFET 20V 236A 125W 1.4mohm @ 10VAmericas -
    Image Part # Description
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3

    MOSFET 20V 60A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3

    MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-GE3

    Mfr.#: SIE810DF-T1-GE3

    OMO.#: OMO-SIE810DF-T1-GE3-VISHAY

    RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
    SIE810DF-T1-E3

    Mfr.#: SIE810DF-T1-E3

    OMO.#: OMO-SIE810DF-T1-E3-VISHAY

    RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
    Availability
    Stock:
    Available
    On Order:
    4500
    Enter Quantity:
    Current price of SIE810DF-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.24
    $2.24
    10
    $2.12
    $21.23
    100
    $2.01
    $201.15
    500
    $1.90
    $949.90
    1000
    $1.79
    $1 788.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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