SIE810DF-T1-E3

Mfr. #:: SIE810DF-T1-E3
Manufacturer:: Vishay
Description:: RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V
Lifecycle:: New from this manufacturer.
Datasheet:: SIE810DF-T1-E3 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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More Information:: SIE810DF-T1-E3 more Information

Product Attribute
Attribute Value

Manufacturer: VISHAY

Product Category: FETs - Single

Packaging: Reel

Part-Aliases: SIE810DF-E3

Mounting-Style: SMD/SMT

Package-Case: PolarPAK-10

Technology: Si

Number-of-Channels: 1 Channel

Configuration: Single

Transistor-Type: 1 N-Channel

Pd-Power-Dissipation: 5.2 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 55 C

Fall-Time: 15 ns 10 ns

Rise-Time: 95 ns 70 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuous-Drain-Current: 45 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Rds-On-Drain-Source-Resistance: 1.4 mOhms

Transistor-Polarity: N-Channel

Typical-Turn-Off-Delay-Time: 95 ns 100 ns

Typical-Turn-On-Delay-Time: 40 ns 20 ns

Channel-Mode: Enhancement

Tags: SIE81, SIE8, SIE

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE810DF-T1-E3 Description

***ure Electronics: Dual N-Channel 20 V 0.02 Ohms Surface Mount Power Mosfet -POLARPAK

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:60000mA; On Resistance, Rds(on):0.0027ohm; Rds(on) Test Voltage, Vgs:12V; Threshold Voltage, Vgs Typ:1.3V ;RoHS Compliant: Yes

***ment14 APAC: MOSFET, N, POLAR PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:236A; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.3V; Power Dissipation Pd:125W; Transistor Case Style:PolarPAK; No. of Pins:10; Base Number:810; Current Id Max:60A; N-channel Gate Charge:90nC; On State Resistance @ Vgs = 2.5V:2.7mohm; On State Resistance @ Vgs = 4.5V:1.6mohm; On State resistance @ Vgs = 10V:1.4mohm; Package / Case:PolarPAK; Power Dissipation Pd:125W; Power Dissipation Pd:125mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:1.3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V; Voltage Vgs th Min:0.8V

SIE810DF-T1-E3 More Information

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

Part #	Mfg.	Description	Stock	Price
SIE810DF-T1-E3 DISTI # SIE810DF-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 60A 10-POLARPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.8141
SIE810DF-T1-E3 DISTI # SIE810DF-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 45A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE810DF-T1-E3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.7900 6000:$1.6900 12000:$1.5900 18000:$1.5900 30000:$1.4900
SIE810DF-T1-E3 DISTI # 22M8804	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 60A POLARPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes	0	1:$1.9500 2000:$1.8600 4000:$1.7400 8000:$1.6200 12000:$1.5500 20000:$1.5300
SIE810DF-T1-E3 DISTI # 69W7162	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 60A, POLARPAK-10,Transistor Polarity:N Channel,Continuous Drain Current Id:60A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.3V RoHS Compliant: Yes	0	1:$3.4800 25:$2.8800 50:$2.6300 100:$2.3700 250:$2.3000 500:$2.0700
SIE810DF-T1-E3 DISTI # 781-SIE810DF-T1-E3	Vishay Intertechnologies	MOSFET 20V 60A 125W 1.4mohm @ 10V RoHS: Compliant	0	1:$3.4800 10:$2.8800 100:$2.3700 250:$2.3000 500:$2.0700
SIE810DF-T1-E3	Vishay Intertechnologies	MOSFET 20V 60A 125W 1.4mohm @ 10V	Americas -
SIE810DF-T1-E3 DISTI # 1497642	Vishay Intertechnologies	RoHS: Compliant	0	1:$5.5100 10:$4.5600 100:$3.7500 250:$3.6500 500:$3.2800 3000:$3.2800

Image	Part #	Description
	Mfr.#: SIE810DF-T1-E3 OMO.#: OMO-SIE810DF-T1-E3	MOSFET 20V 60A 125W 1.4mohm @ 10V
	Mfr.#: SIE810DF-T1-GE3 OMO.#: OMO-SIE810DF-T1-GE3	MOSFET 20V 236A 125W 1.4mohm @ 10V
	Mfr.#: SIE810DF-T1-GE3 OMO.#: OMO-SIE810DF-T1-GE3-VISHAY	RF Bipolar Transistors MOSFET 20V 236A 125W 1.4mohm @ 10V
	Mfr.#: SIE810DF-T1-E3 OMO.#: OMO-SIE810DF-T1-E3-VISHAY	RF Bipolar Transistors MOSFET 20V 60A 125W 1.4mohm @ 10V

SIE810DF-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes