FGA40N65SMD

FGA40N65SMD
Mfr. #:
FGA40N65SMD
Manufacturer:
ON Semiconductor / Fairchild
Description:
IGBT Transistors 650V, 40A Field Stop IGBT
Lifecycle:
New from this manufacturer.
Datasheet:
FGA40N65SMD Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
FGA40N65SMD more Information
Product Attribute
Attribute Value
Manufacturer:
ON Semiconductor
Product Category:
IGBT Transistors
RoHS:
Y
Technology:
Si
Package / Case:
TO-3PN
Mounting Style:
Through Hole
Collector- Emitter Voltage VCEO Max:
650 V
Collector-Emitter Saturation Voltage:
2.5 V
Maximum Gate Emitter Voltage:
20 V
Continuous Collector Current at 25 C:
80 A
Pd - Power Dissipation:
349 W
Series:
FGA40N65SMD
Packaging:
Tube
Brand:
ON Semiconductor / Fairchild
Gate-Emitter Leakage Current:
400 nA
Product Type:
IGBT Transistors
Factory Pack Quantity:
450
Subcategory:
IGBTs
Unit Weight:
0.225789 oz
Tags
FGA40N65S, FGA40N65, FGA40N6, FGA40N, FGA40, FGA4, FGA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    M***n
    M***n
    UK

    fast delivery

    2019-04-24
    M***v
    M***v
    RU

    Not checked yet, the price is excellent

    2019-07-09
***et
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P(N) Rail
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FGA40N65SMD Series 650 V 40 A Field Stop IGBT - TO-3PN
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
***ource
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***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
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IGBT,N CH,FAST,W/DIO,600V,80A,TO247; Transistor Type:IGBT; DC Collector Current:80A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:349W
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.
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IGBT, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Te
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***ment14 APAC
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
FGAx0N65 650V Field Stop IGBTs
ON Semiconductor FGAx0N65 650V Field Stop IGBTs enable designers to develop a highly reliable system design with higher input voltage while offering optimum performance where low conduction and switching losses are essential. This helps designers of solar power inverters, uninterruptible power supplies (UPS), and welding applications create designs that improve energy efficiency with heat and thermal regulation while keeping the component count low. These 650V IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution and a wide safe operating area.Learn More
FGAFx0N60 Field Stop IGBTs
ON Semiconductor FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. The FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Part # Mfg. Description Stock Price
FGA40N65SMD
DISTI # V99:2348_06359631
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 349000mW 3-Pin(3+Tab) TO-3PN Tube409
  • 250:$2.0160
  • 100:$2.1770
  • 10:$2.4720
  • 1:$2.8689
FGA40N65SMD
DISTI # FGA40N65SMDOS-ND
ON SemiconductorIGBT 650V 80A 349W TO3P
RoHS: Compliant
Min Qty: 1
Container: Tube
448In Stock
  • 1350:$2.1829
  • 900:$2.5649
  • 450:$2.8441
  • 10:$3.6230
  • 1:$4.0200
FGA40N65SMD
DISTI # 31312018
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 349000mW 3-Pin(3+Tab) TO-3PN Tube35550
  • 25650:$1.7940
  • 17100:$1.8657
  • 8550:$1.9168
  • 450:$2.1528
FGA40N65SMD
DISTI # 27607742
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 349000mW 3-Pin(3+Tab) TO-3PN Tube409
  • 250:$2.0160
  • 100:$2.1770
  • 10:$2.4720
  • 4:$2.8689
FGA40N65SMD
DISTI # FGA40N65SMD
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FGA40N65SMD)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.7900
  • 900:$1.7900
  • 1800:$1.6900
  • 2700:$1.6900
  • 4500:$1.6900
FGA40N65SMD
DISTI # FGA40N65SMD
ON SemiconductorTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FGA40N65SMD)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€2.1900
  • 10:€1.9900
  • 25:€1.8900
  • 50:€1.8900
  • 100:€1.7900
  • 500:€1.6900
  • 1000:€1.5900
FGA40N65SMD
DISTI # 95T0024
ON SemiconductorFSPIGBT TO3PN 40A 650V / TUBE0
  • 10000:$1.9200
  • 2500:$2.0400
  • 1000:$2.1300
  • 500:$2.5000
  • 100:$2.7600
  • 10:$3.3200
  • 1:$4.0900
FGA40N65SMD
DISTI # 512-FGA40N65SMD
ON SemiconductorIGBT Transistors 650V, 40A Field Stop IGBT
RoHS: Compliant
706
  • 1:$3.0800
  • 10:$2.6100
  • 100:$2.2700
  • 250:$2.1500
  • 500:$1.9300
FGA40N65SMD
DISTI # 8648782P
ON SemiconductorIGBT 650V 40A FIELD STOP TO3PN, TU8
  • 900:£1.4350
  • 450:£1.6000
  • 100:£1.6900
  • 20:£1.9400
FGA40N65SMDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant
Europe - 210
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    Availability
    Stock:
    614
    On Order:
    2597
    Enter Quantity:
    Current price of FGA40N65SMD is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
    Reference price (USD)
    Quantity
    Unit Price
    Ext. Price
    1
    $2.72
    $2.72
    10
    $2.31
    $23.10
    100
    $2.00
    $200.00
    250
    $1.90
    $475.00
    500
    $1.71
    $855.00
    1000
    $1.48
    $1 480.00
    Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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