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CGH09120F

CGH09120F
Mfr. #:
CGH09120F
Manufacturer:
N/A
Description:
RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
Lifecycle:
New from this manufacturer.
Datasheet:
CGH09120F Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
More Information:
CGH09120F more Information
Product Attribute
Attribute Value
Manufacturer:
Cree, Inc.
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HEMT
Technology:
GaN
Gain:
21 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
120 V
Vgs - Gate-Source Breakdown Voltage:
- 10 V, 2 V
Id - Continuous Drain Current:
28 A
Output Power:
20 W
Maximum Drain Gate Voltage:
28 V
Minimum Operating Temperature:
- 40 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
56 W
Mounting Style:
Screw Mount
Packaging:
Tray
Application:
Telecom
Configuration:
Single
Operating Frequency:
910 MHz
Operating Temperature Range:
- 40 C to + 150 C
Brand:
Wolfspeed / Cree
NF - Noise Figure:
3 dB
Product Type:
RF JFET Transistors
Factory Pack Quantity:
50
Subcategory:
Transistors
Vgs th - Gate-Source Threshold Voltage:
- 3 V
Tags
CGH0, CGH
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440095
***hardson RFPD
RF POWER TRANSISTOR
CGH09120F GaN High Electron Mobility Transistor
Wolfspeed / Cree CGH09120F GaN High Electron Mobility Transistor (HEMT) is designed for high efficiency, high gain and wide bandwidth capabilities. This GaN HEMT allows for a high degree of DPD Correction to be applied making it ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is housed in a ceramic/metal flange package.Learn More
Part # Mfg. Description Stock Price
CGH09120F
DISTI # CGH09120F-ND		WolfspeedRF MOSFET HEMT 28V 440095
RoHS: Compliant
Min Qty: 1
Container: Tray		136In Stock
  • 1:$197.0000
CGH09120F
DISTI # 941-CGH09120F		Cree, Inc.RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
RoHS: Compliant		26
  • 1:$197.0000
Image Part # Description
CGH09120F

Mfr.#: CGH09120F

OMO.#: OMO-CGH09120F

 RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
CGH09120F 120W

Mfr.#: CGH09120F 120W

OMO.#: OMO-CGH09120F-120W-1190

 New and Original
CGH09120FE

Mfr.#: CGH09120FE

OMO.#: OMO-CGH09120FE-1190

 New and Original
CGH09120F

Mfr.#: CGH09120F

OMO.#: OMO-CGH09120F-WOLFSPEED

 RF MOSFET HEMT 28V 440095
Availability
Stock:
26
On Order:
2009
Enter Quantity:
Current price of CGH09120F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$220.65
$220.65
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
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