PartNumber | CGH09120F | CGH09120F 120W | CGH09120FE |
Description | RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt | ||
Manufacturer | Cree, Inc. | - | - |
Product Category | RF JFET Transistors | - | - |
RoHS | Y | - | - |
Transistor Type | HEMT | - | - |
Technology | GaN | - | - |
Gain | 21 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 120 V | - | - |
Vgs Gate Source Breakdown Voltage | - 10 V, 2 V | - | - |
Id Continuous Drain Current | 28 A | - | - |
Output Power | 20 W | - | - |
Maximum Drain Gate Voltage | 28 V | - | - |
Minimum Operating Temperature | - 40 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 56 W | - | - |
Mounting Style | Screw Mount | - | - |
Packaging | Tray | - | - |
Application | Telecom | - | - |
Configuration | Single | - | - |
Operating Frequency | 910 MHz | - | - |
Operating Temperature Range | - 40 C to + 150 C | - | - |
Brand | Wolfspeed / Cree | - | - |
NF Noise Figure | 3 dB | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | Transistors | - | - |
Vgs th Gate Source Threshold Voltage | - 3 V | - | - |