CGH0

CGH09120F vs CGH09120F 120W vs CGH09120FE

 
PartNumberCGH09120FCGH09120F 120WCGH09120FE
DescriptionRF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
ManufacturerCree, Inc.--
Product CategoryRF JFET Transistors--
RoHSY--
Transistor TypeHEMT--
TechnologyGaN--
Gain21 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Vgs Gate Source Breakdown Voltage- 10 V, 2 V--
Id Continuous Drain Current28 A--
Output Power20 W--
Maximum Drain Gate Voltage28 V--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation56 W--
Mounting StyleScrew Mount--
PackagingTray--
ApplicationTelecom--
ConfigurationSingle--
Operating Frequency910 MHz--
Operating Temperature Range- 40 C to + 150 C--
BrandWolfspeed / Cree--
NF Noise Figure3 dB--
Product TypeRF JFET Transistors--
Factory Pack Quantity50--
SubcategoryTransistors--
Vgs th Gate Source Threshold Voltage- 3 V--
Manufacturer Part # Description RFQ
N/A
N/A
CGH09120F RF JFET Transistors GaN HEMT UHF-2.5GHz, 120 Watt
CGH09120F RF MOSFET HEMT 28V 440095
CGH09120F 120W New and Original
CGH09120FE New and Original
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